| Low-noise La0. 7Sr0. 3MnO3 thermometers for uncooled bolometric applications F Yang, L Méchin, JM Routoure, B Guillet, RA Chakalov Journal of applied physics 99 (2), 2006 | 89 | 2006 |
| Experimental technique for reducing contact and background noise in voltage spectral density measurements C Barone, A Galdi, S Pagano, O Quaranta, L Méchin, JM Routoure, ... Review of Scientific Instruments 78 (9), 2007 | 58 | 2007 |
| Low temperature noise spectroscopy of 0.1 μm partially depleted silicon on insulator metal-oxide-semiconductor field effect transistors I Lartigau, JM Routoure, W Guo, B Cretu, R Carin, A Mercha, C Claeys, ... Journal of applied physics 101 (10), 2007 | 56 | 2007 |
| Uncooled bolometer response of a low noise La2∕ 3Sr1∕ 3MnO3 thin film L Méchin, JM Routoure, B Guillet, F Yang, S Flament, D Robbes, ... Applied Physics Letters 87 (20), 2005 | 55 | 2005 |
| Low-Frequency Noise Assessment of Silicon Passivated Ge pMOSFETs With TiN/TaN/ Gate Stack W Guo, G Nicholas, B Kaczer, RM Todi, B De Jaeger, C Claeys, A Mercha, ... IEEE electron device letters 28 (4), 288-291, 2007 | 46 | 2007 |
| 1∕ f noise in patterned La2∕ 3Sr1∕ 3MnO3 thin films in the 300–400K range L Méchin, JM Routoure, S Mercone, F Yang, S Flament, RA Chakalov Journal of Applied Physics 103 (8), 2008 | 41 | 2008 |
| Low frequency noise characterization in n-channel FinFETs R Talmat, H Achour, B Cretu, JM Routoure, A Benfdila, R Carin, N Collaert, ... Solid-state electronics 70, 20-26, 2012 | 39 | 2012 |
| Low-frequency noise assessment in advanced UTBOX SOI nMOSFETs with different gate dielectrics SD Dos Santos, B Cretu, V Strobel, JM Routoure, R Carin, JA Martino, ... Solid-State Electronics 97, 14-22, 2014 | 37 | 2014 |
| Epitaxial La0.7Sr0.3MnO3 thin films grown on SrTiO3 buffered silicon substrates by reactive molecular‐beam epitaxy L Méchin, C Adamo, S Wu, B Guillet, S Lebargy, C Fur, JM Routoure, ... physica status solidi (a) 209 (6), 1090-1095, 2012 | 36 | 2012 |
| DC and low frequency noise performances of SOI p-FinFETs at very low temperature H Achour, R Talmat, B Cretu, JM Routoure, A Benfdila, R Carin, N Collaert, ... Solid-state electronics 90, 160-165, 2013 | 35 | 2013 |
| Apparent volume dependence of 1∕ f noise in thin film structures: Role of contacts C Barone, S Pagano, L Méchin, JM Routoure, P Orgiani, L Maritato Review of Scientific Instruments 79 (5), 2008 | 34 | 2008 |
| La0. 7Sr0. 3MnO3 suspended microbridges for uncooled bolometers made using reactive ion etching of the silicon substrates S Liu, B Guillet, A Aryan, C Adamo, C Fur, JM Routoure, F Lemarié, ... Microelectronic engineering 111, 101-104, 2013 | 32 | 2013 |
| Impact of strain and source/drain engineering on the low frequency noise behaviour in n-channel tri-gate FinFETs W Guo, B Cretu, JM Routoure, R Carin, E Simoen, A Mercha, N Collaert, ... Solid-State Electronics 52 (12), 1889-1894, 2008 | 30 | 2008 |
| A low-noise and quasi-ideal DC current source dedicated to four-probe low-frequency noise measurements JM Routoure, S Wu, C Barone, L Méchin, B Guillet IEEE Transactions on Instrumentation and Measurement 69 (1), 194-200, 2019 | 29 | 2019 |
| Experimental evidence of correlation between 1/f noise level and metal-to-insulator transition temperature in epitaxial La0. 7Sr0. 3MnO3 thin films L Méchin, S Wu, B Guillet, P Perna, C Fur, S Lebargy, C Adamo, ... Journal of Physics D: Applied Physics 46 (20), 202001, 2013 | 28 | 2013 |
| Enhanced electrical and magnetic properties in La0. 7Sr0. 3MnO3 thin films deposited on CaTiO3-buffered silicon substrates C Adamo, L Méchin, T Heeg, M Katz, S Mercone, B Guillet, S Wu, ... APL materials 3 (6), 2015 | 27 | 2015 |
| Haptic perception of document structure for visually impaired people on handled devices F Maurel, G Dias, JM Routoure, M Vautier, P Beust, M Molina, C Sann Procedia Computer Science 14, 319-329, 2012 | 27 | 2012 |
| Impact of Gate–Drain Spacing on Low-Frequency Noise Performance of In Situ SiN Passivated InAlGaN/GaN MIS-HEMTs M Rzin, JM Routoure, B Guillet, L Méchin, M Morales, C Lacam, ... IEEE Transactions on Electron Devices 64 (7), 2820-2825, 2017 | 24 | 2017 |
| Towards single‐trap spectroscopy: Generation‐recombination noise in UTBOX SOI nMOSFETs E Simoen, B Cretu, W Fang, M Aoulaiche, JM Routoure, R Carin, ... physica status solidi (c) 12 (3), 292-298, 2015 | 22 | 2015 |
| A low‐noise high output impedance DC current source JM Routoure, D Fadil, S Flament, L Méchin AIP Conference Proceedings 922 (1), 419-424, 2007 | 19 | 2007 |
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