| First direct observation of a nearly ideal graphene band structure M Sprinkle, D Siegel, Y Hu, J Hicks, A Tejeda, A Taleb-Ibrahimi, ... Physical Review Letters 103 (22), 226803, 2009 | 587 | 2009 |
| Chemistry and electronic properties of metal-organic semiconductor interfaces: Al, Ti, In, Sn, Ag, and Au on PTCDA Y Hirose, A Kahn, V Aristov, P Soukiassian, V Bulovic, SR Forrest Physical Review B 54 (19), 13748, 1996 | 453 | 1996 |
| Chemistry, diffusion, and electronic properties of a metal/organic semiconductor contact: In/perylenetetracarboxylic dianhydride Y Hirose, A Kahn, V Aristov, P Soukiassian Applied Physics Letters 68 (2), 217-219, 1996 | 172 | 1996 |
| Adsorbate-induced shifts of electronic surface states: Cs on the (100) faces of tungsten, molybdenum, and tantalum P Soukiassian, R Riwan, J Lecante, E Wimmer, SR Chubb, AJ Freeman Physical Review B 31 (8), 4911, 1985 | 172 | 1985 |
| Nanochemistry at the atomic scale revealed in hydrogen-induced semiconductor surface metallization V Derycke, PG Soukiassian, F Amy, YJ Chabal, MD D'angelo, ... Nature materials 2 (4), 253-258, 2003 | 153 | 2003 |
| Direct observation of a β-SiC (100)-c (4× 2) surface reconstruction P Soukiassian, F Semond, L Douillard, A Mayne, G Dujardin, L Pizzagalli, ... Physical review letters 78 (5), 907, 1997 | 142 | 1997 |
| Atomic structure of the β-SiC (100)-(3× 2) surface F Semond, P Soukiassian, A Mayne, G Dujardin, L Douillard, C Jaussaud Physical review letters 77 (10), 2013, 1996 | 121 | 1996 |
| Highly stable Si atomic line formation on the β-SiC (100) surface P Soukiassian, F Semond, A Mayne, G Dujardin Physical review letters 79 (13), 2498, 1997 | 120 | 1997 |
| Soft-x-ray photoemission study of chemisorption and Fermi-level pinning at the Cs/GaAs (110) and K/GaAs (110) interfaces T Kendelewicz, P Soukiassian, MH Bakshi, Z Hurych, I Lindau, WE Spicer Physical Review B 38 (11), 7568, 1988 | 114 | 1988 |
| Electronic properties of O 2 on Cs or Na overlayers adsorbed on Si (100) 21 from room temperature to 650° C P Soukiassian, MH Bakshi, Z Hurych, TM Gentle Physical Review B 35 (8), 4176, 1987 | 112 | 1987 |
| Electronic promoters and semiconductor oxidation: Alkali metals on Si (111) surfaces A Franciosi, P Philip, S Chang, A Wall, A Raisanen, N Troullier, ... Physical Review B 35 (2), 910, 1987 | 110 | 1987 |
| Si-rich - and 3×3 surface oxidation and initial interface formation from 25 to 650 °C F Amy, P Soukiassian, YK Hwu, C Brylinski Physical Review B 65 (16), 165323, 2002 | 107 | 2002 |
| SiO2‐Si interface formation by catalytic oxidation using alkali metals and removal of the catalyst species P Soukiassian, TM Gentle, MH Bakshi, Z Hurych Journal of applied physics 60 (12), 4339-4341, 1986 | 103 | 1986 |
| Electronic properties of alkali metal/silicon interfaces: A new picture P Soukiassian, MH Bakshi, Z Hurych, TM Gentle Surface Science Letters 221 (3), L759-L768, 1989 | 99 | 1989 |
| Multilayer epitaxial graphene grown on the surface; structure and electronic properties M Sprinkle, J Hicks, A Tejeda, A Taleb-Ibrahimi, P Le Fevre, F Bertran, ... Journal of Physics D: Applied Physics 43 (37), 374006, 2010 | 98 | 2010 |
| Electronic evidence of asymmetry in the Si (111) 3× 3− Ag structure I Matsuda, H Morikawa, C Liu, S Ohuchi, S Hasegawa, T Okuda, ... Physical Review B 68 (8), 085407, 2003 | 95 | 2003 |
| Temperature-Induced Semiconducting Reversible Phase Transition on the -SiC(100) Surface VY Aristov, L Douillard, O Fauchoux, P Soukiassian Physical review letters 79 (19), 3700, 1997 | 93 | 1997 |
| Atomic Scale Oxidation of a Complex System: -SiC(0001)-( ) F Amy, H Enriquez, P Soukiassian, PF Storino, YJ Chabal, AJ Mayne, ... Physical Review Letters 86 (19), 4342, 2001 | 90 | 2001 |
| Atomic scale control and understanding of cubic silicon carbide surface reconstructions, nanostructures and nanochemistry PG Soukiassian, HB Enriquez Journal of Physics: Condensed Matter 16 (17), S1611, 2004 | 89 | 2004 |
| Carbon atomic chain formation on the β-SiC (100) surface by controlled sp→ sp 3 transformation V Derycke, P Soukiassian, A Mayne, G Dujardin, J Gautier Physical review letters 81 (26), 5868, 1998 | 88 | 1998 |
Guy Le LayAix-Marseille University在 univ-amu.fr 的电子邮件经过验证
