| Control of epitaxy of graphene by crystallographic orientation of a Si substrate toward device applications H Fukidome, R Takahashi, S Abe, K Imaizumi, H Handa, HC Kang, ... Journal of Materials Chemistry 21 (43), 17242-17248, 2011 | 50 | 2011 |
| Room temperature logic inverter on epitaxial graphene-on-silicon device A El Moutaouakil, HC Kang, H Handa, H Fukidome, T Suemitsu, E Sano, ... Japanese Journal of Applied Physics 50 (7R), 070113, 2011 | 41 | 2011 |
| Epitaxial graphene top-gate FETs on silicon substrates HC Kang, H Karasawa, Y Miyamoto, H Handa, H Fukidome, T Suemitsu, ... Solid-State Electronics 54 (10), 1071-1075, 2010 | 35 | 2010 |
| Semiconductor devices including a stressor in a recess and methods of forming the same DS Shin, HC Kang, D Roh, PK Park, S Geo-Myung, N Lee, CW Lee, ... US Patent 9,129,952, 2012 | 26 | 2012 |
| Carbonaceous field effect transistor with graphene and diamondlike carbon S Takabayashi, S Ogawa, Y Takakuwa, HC Kang, R Takahashi, ... Diamond and related materials 22, 118-123, 2012 | 25 | 2012 |
| Epitaxial graphene field-effect transistors on silicon substrates HC Kang, H Karasawa, Y Miyamoto, H Handa, T Suemitsu, M Suemitsu, ... Solid-State Electronics 54 (9), 1010-1014, 2010 | 25 | 2010 |
| Extraction of drain current and effective mobility in epitaxial graphene channel field-effect transistors on SiC layer grown on silicon substrates HC Kang, R Olac-vaw, H Karasawa, Y Miyamoto, H Handa, T Suemitsu, ... Japanese Journal of Applied Physics 49 (4S), 04DF17, 2010 | 23 | 2010 |
| Ambipolar Behavior in Epitaxial Graphene-Based Field-Effect Transistors on Si Substrate R Olac-vaw, HC Kang, H Karasawa, Y Miyamoto, H Handa, H Fukidome, ... Japanese Journal of Applied Physics 49 (6S), 06GG01, 2010 | 15 | 2010 |
| Spectral narrowing effect of a novel super-grating dual-gate structure for plasmon-resonant terahertz emitter T Nishimura, N Magome, HC Kang, T Otsuji IEICE transactions on electronics 92 (5), 696-701, 2009 | 10 | 2009 |
| Layout-induced stress effects on the performance and variation of FinFETs YP Choongmok Lee, Hyun-Chul Kang, Jeong Guk Min, Jongchol Kim, Uihui Kwon ... Proceeding of International Conference on Simulation of Semiconductor …, 2015 | 7 | 2015 |
| Epitaxial graphene on silicon toward graphene-silicon fusion electronics H Fukidome, R Takahashi, Y Miyamoto, H Handa, HC Kang, H Karasawa, ... arXiv preprint arXiv:1001.4955, 2010 | 5 | 2010 |
| 3D-integration of a log spiral antenna onto a dual grating-gate plasmon-resonant terahertz emitter for high-directivity radiation HC Kang, T Nishimura, T Komori, T Mori, N Watanabe, T Asano, T Otsuji Journal of Physics: Conference Series 193 (1), 012070, 2009 | 1 | 2009 |
| DC and RF characteristics of graphene FETs formed by thermal decomposition of SiC grown on silicon substrates HCK S. Takabayashi, K. Akagawa, T. Yoshida, S. Abe, R. Takahashi, H ... Tech. Dig. of 2nd International Symposium on Graphene Devices: Technology …, 2010 | | 2010 |
| Epitaxial Graphene-On-Silicon Logic Inverter AEM H.-C. Kang, H. Handa, H. Fukidome, T. Suemitsu, E. Sano, M. Suemitsu, T ... Abstract in 42th International Conference on Solid State Devices and …, 2010 | | 2010 |
| Heteroepitaxial Graphene on a Si Substrate Field-Effect Transistor RO H.-C. Kang, T. Komori, T. Watanabe, H. Karasawa, Y. Miyamoto, H. Handa, H ... Abstract in APS March Meeting 2010, Oregon, USA, Vol. 55, No. 2, Y21.00012., 2010 | | 2010 |
| Optoelectronic Application of Multi-layer Epitaxial Graphene on a Si Substrate RO H.-C. Kang, T. Komori, T. Watanabe, H. Karasawa, Y. Miyamoto, H. Handa, H ... Proc. of IEEE 2nd International Nano-Electronics Conference (INEC2010), Hong …, 2010 | | 2010 |
| Epitaxial Graphene Top-Gate FETs on Silicon Substrates HCK H. Karasawa, Y. Miyamoto, H. Handa, H. Fukidome, T. Suemitsu, M ... Abstract in 10th International Semiconductor Device Research Symposium …, 2009 | | 2009 |
| Ambipolar behaviors in epitaxial graphene based FETs on Si substrate RO H.-C. Kang, H. Karasawa, Y. Miyamoto, H. Handa, H. Fukidome, T. Suemitsu ... Abstract in 22nd International Microprocesses and Nanotechnology Conference …, 2009 | | 2009 |
| Extraction of Drain Current and Effective Mobility in Epitaxial Graphene Channel FETs on Silicon Substrate HCK R. Olac-vaw, H. Karasawa, Y. Miyamoto, H. Handa, T. Siemitsu, H ... Abstract in 41th International Conference on Solid State Devices and …, 2009 | | 2009 |
| Epitaxial Graphene Field Effect Transistors on Silicon Substrates HCK H. Karasawa, Y. Miyamoto, H. Handa, T. Suemitsu, M. Suemitsu, and T. Otsuji Proc. of 39th European Solid-State Device Research Conference (ESSDERC2009 …, 2009 | | 2009 |
Taiichi OtsujiRIEC, Tohoku University在 riec.tohoku.ac.jp 的电子邮件经过验证
Taiichi OtsujiRIEC, Tohoku University在 riec.tohoku.ac.jp 的电子邮件经过验证
Tetsuya SuemitsuTohoku University在 tohoku.ac.jp 的电子邮件经过验证
Hirokazu Fukidome電子工学、表面科学、電気化学在 riec.tohoku.ac.jp 的电子邮件经过验证