| High-performance InAlN/GaN HEMTs on silicon substrate with high fT× Lg P Cui, A Mercante, G Lin, J Zhang, P Yao, DW Prather, Y Zeng Applied Physics Express 12 (10), 104001, 2019 | 47 | 2019 |
| InAlN/GaN HEMT on Si with fmax= 270 GHz P Cui, M Jia, H Chen, G Lin, J Zhang, L Gundlach, JQ Xiao, Y Zeng IEEE Transactions on Electron Devices 68 (3), 994-999, 2021 | 31 | 2021 |
| Phosphorus diffusion in germanium following implantation and excimer laser annealing C Wang, C Li, S Huang, W Lu, G Yan, M Zhang, H Wu, G Lin, J Wei, ... Applied Surface Science 300, 208-212, 2014 | 29 | 2014 |
| Low dark current broadband 360-1650 nm ITO/Ag/n-Si Schottky photodetectors Z Huang, Y Mao, G Lin, X Yi, A Chang, C Li, S Chen, W Huang, J Wang Optics Express 26 (5), 5827-5834, 2018 | 27 | 2018 |
| Germanium n+/p Shallow Junction With Record Rectification Ratio Formed by Low-Temperature Preannealing and Excimer Laser Annealing C Wang, C Li, G Lin, W Lu, J Wei, W Huang, H Lai, S Chen, Z Di, M Zhang IEEE Transactions on Electron Devices 61 (9), 3060-3065, 2014 | 26 | 2014 |
| Raman scattering study of amorphous GeSn films and their crystallization on Si substrates L Zhang, Y Wang, N Chen, G Lin, C Li, W Huang, S Chen, J Xu, J Wang Journal of Non-Crystalline Solids 448, 74-78, 2016 | 22 | 2016 |
| Broadband 400-2400 nm Ge heterostructure nanowire photodetector fabricated by three-dimensional Ge condensation technique G Lin, D Liang, C Yu, H Hong, Y Mao, C Li, S Chen Optics Express 27 (22), 32801-32809, 2019 | 20 | 2019 |
| High-performance Ge pn photodiode achieved with preannealing and excimer laser annealing C Wang, C Li, J Wei, G Lin, X Lan, X Chi, C Lu, Z Huang, C Chen, ... IEEE Photonics Technology Letters 27 (14), 1485-1488, 2015 | 20 | 2015 |
| Low specific contact resistivity to n-Ge and well-behaved Ge n+/p diode achieved by implantation and excimer laser annealing C Wang, C Li, S Huang, W Lu, G Yan, G Lin, J Wei, W Huang, H Lai, ... Applied Physics Express 6 (10), 106501, 2013 | 19 | 2013 |
| Impact of ZrO2 Dielectrics Thickness on Electrical Performance of TiO2 Thin Film Transistors with Sub-2 V Operation J Zhang, M Jia, MG Sales, Y Zhao, G Lin, P Cui, C Santiwipharat, C Ni, ... ACS Applied Electronic Materials 3 (12), 5483-5495, 2021 | 18 | 2021 |
| High performance anatase-TiO2 thin film transistors with a two-step oxidized TiO2 channel and plasma enhanced atomic layer-deposited ZrO2 gate dielectric J Zhang, P Cui, G Lin, Y Zhang, MG Sales, M Jia, Z Li, C Goodwin, ... Applied Physics Express 12 (9), 096502, 2019 | 18 | 2019 |
| Self-compliance Pt/HfO2/Ti/Si one-diode–one-resistor resistive random access memory device and its low temperature characteristics C Lu, J Yu, XW Chi, GY Lin, XL Lan, W Huang, JY Wang, JF Xu, C Wang, ... Applied Physics Express 9 (4), 041501, 2016 | 18 | 2016 |
| High gain, broadband p-WSe2/n-Ge van der Waals heterojunction phototransistor with a Schottky barrier collector S Li, Q Wu, H Ding, S Wu, X Cai, R Wang, J Xiong, G Lin, W Huang, ... Nano Research 16 (4), 5796-5802, 2023 | 17 | 2023 |
| Strain evolution in SiGe-on-insulator fabricated by a modified germanium condensation technique with gradually reduced condensation temperature G Lin, D Liang, J Wang, C Yu, C Li, S Chen, W Huang, J Wang, J Xu Materials Science in Semiconductor Processing 97, 56-61, 2019 | 17 | 2019 |
| In situ site-specific gallium filling and nanograin growth for blocking of threading defects in semipolar (1122) GaN Z Wu, P Song, T Shih, L Pang, L Chen, G Lin, D Lin, C Li, R Liu, W Shen, ... Crystal Growth & Design 17 (9), 4687-4693, 2017 | 17 | 2017 |
| Strong electroluminescence from direct band and defects in Ge n+/p shallow junctions at room temperature G Lin, C Wang, C Li, C Chen, Z Huang, W Huang, S Chen, H Lai, C Jin, ... Applied Physics Letters 108 (19), 2016 | 16 | 2016 |
| Tuning the electron transport behavior at Li/LATP interface for enhanced cyclability of solid-state Li batteries L Luo, F Zheng, H Gao, C Lan, Z Sun, W Huang, X Han, Z Zhang, P Su, ... Nano Research 16 (1), 1634-1641, 2023 | 15 | 2023 |
| Formation of high-Sn content polycrystalline GeSn films by pulsed laser annealing on co-sputtered amorphous GeSn on Ge substrate L Zhang, HY Hong, YS Wang, C Li, GY Lin, SY Chen, W Huang, JY Wang Chinese Physics B 26 (11), 116802, 2017 | 15 | 2017 |
| Sub-60 mV/decade switching via hot electron transfer in nanoscale GaN HEMTs P Cui, G Lin, J Zhang, Y Zeng IEEE Electron Device Letters 41 (8), 1185-1188, 2020 | 14 | 2020 |
| Effects of N2O surface treatment on the electrical properties of the InAlN/GaN high electron mobility transistors P Cui, J Zhang, TY Yang, H Chen, H Zhao, G Lin, L Wei, JQ Xiao, ... Journal of Physics D: Applied Physics 53 (6), 065103, 2019 | 14 | 2019 |
Yuping ZengAssistant Professor, Dept. of Electrical and Computer Engineering, University of Delaware在 udel.edu 的电子邮件经过验证
