| 15 kV-Class Implantation-Free 4H-SiC BJTs with Record High Current Gain A Salemi, H Elahipanah, K Jacobs, CM Zetterling, M Östling IEEE Electron Device Letters 39 (1), 63-66, 2018 | 50 | 2018 |
| Temperature dependence of electrical characteristics of carbon nanotube field‐effect transistors: a quantum simulation study A Naderi, SM Noorbakhsh, H Elahipanah Journal of Nanomaterials 2012 (1), 532625, 2012 | 42 | 2012 |
| 5.8-kV implantation-free 4H-SiC BJT with multiple-shallow-trench junction termination extension H Elahipanah, A Salemi, CM Zetterling, M Östling IEEE Electron Device Letters 36 (2), 168-170, 2014 | 35 | 2014 |
| A 1300-V 0.34-Partial SOI LDMOSFET With Novel Dual Charge Accumulation Layers H Elahipanah, AA Orouji IEEE transactions on electron devices 57 (8), 1959-1965, 2010 | 35 | 2010 |
| Simulation and optimization of high breakdown double-recessed 4H-SiC MESFET with metal plate termination technique H Elahipanah Superlattices and Microstructures 48 (6), 529-540, 2010 | 28 | 2010 |
| 500° C high current 4H-SiC lateral BJTs for high-temperature integrated circuits H Elahipanah, S Kargarrazi, A Salemi, M Östling, CM Zetterling IEEE Electron Device Letters 38 (10), 1429-1432, 2017 | 27 | 2017 |
| Conductivity modulated on-axis 4H-SiC 10+ kV PiN diodes A Salemi, H Elahipanah, B Buono, A Hallén, JU Hassan, P Bergman, ... 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's …, 2015 | 26 | 2015 |
| Area-and efficiency-optimized junction termination for a 5.6 kV SiC BJT process with low ON-resistance A Salemi, H Elahipanah, G Malm, CM Zetterling, M Östling 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's …, 2015 | 26 | 2015 |
| 500° C, High Current Linear Voltage Regulator in 4H-SiC BJT technology S Kargarrazi, H Elahipanah, S Rodriguez, CM Zetterling IEEE Electron Device Letters 39 (4), 548-551, 2018 | 25 | 2018 |
| A wafer-scale Ni-salicide contact technology on n-type 4H-SiC H Elahipanah, A Asadollahi, M Ekström, A Salemi, CM Zetterling, ... ECS Journal of Solid State Science and Technology 6 (4), P197, 2017 | 20 | 2017 |
| Record gain at 3.1 GHz of 4H-SiC high power RF MESFET H Elahipanah Microelectronics Journal 42 (2), 299-304, 2011 | 20 | 2011 |
| A 500° C active down-conversion mixer in silicon carbide bipolar technology MW Hussain, H Elahipanah, JE Zumbro, S Schröder, S Rodriguez, ... IEEE Electron Device Letters 39 (6), 855-858, 2018 | 16 | 2018 |
| Optimal emitter cell geometry in high power 4H-SiC BJTs A Salemi, H Elahipanah, CM Zetterling, M Östling IEEE Electron Device Letters 36 (10), 1069-1072, 2015 | 16 | 2015 |
| 500 C SiC PWM Integrated Circuit S Kargarrazi, H Elahipanah, S Saggini, D Senesky, CM Zetterling IEEE Transactions on Power Electronics 34 (3), 1997-2001, 2018 | 13 | 2018 |
| High-temperature passive components for extreme environments J Colmenares, S Kargarrazi, H Elahipanah, HP Nee, CM Zetterling 2016 IEEE 4th workshop on wide bandgap power devices and applications (WiPDA …, 2016 | 13 | 2016 |
| Low temperature Ni-Al ohmic contacts to p-type 4H-SiC using semi-salicide processing M Ekström, SB Hou, H Elahipanah, A Salemi, M Östling, CM Zetterling Materials Science Forum 924, 389-392, 2018 | 12 | 2018 |
| Area-optimized JTE for 4.5 kV non ion-implanted 4H-SiC BJT A Salemi, H Elahipanah, B Buono, CM Zetterling, M Östling Materials Science Forum 740, 974-977, 2013 | 11 | 2013 |
| A novel nanoscale 4H-SiC-on-insulator MOSFET using step doping channel AA Orouji, H Elahipanah IEEE Transactions on Device and Materials Reliability 10 (1), 92-95, 2009 | 11 | 2009 |
| A SiC BJT-based negative resistance oscillator for high-temperature applications MW Hussain, H Elahipanah, JE Zumbro, S Rodriguez, BG Malm, ... IEEE Journal of the Electron Devices Society 7, 191-195, 2019 | 10 | 2019 |
| Investigation of the breakdown voltage in high voltage 4H-SiC BJT with respect to oxide and interface charges A Salemi, H Elahipanah, CM Zetterling, M Östling Materials Science Forum 821, 834-837, 2015 | 10 | 2015 |
Carl-Mikael ZetterlingKTH在 kth.se 的电子邮件经过验证
