| Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV JW Palmour, L Cheng, V Pala, EV Brunt, DJ Lichtenwalner, GY Wang, ... 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's …, 2014 | 341 | 2014 |
| 10 kV and 15 kV silicon carbide power MOSFETs for next-generation energy conversion and transmission systems V Pala, EV Brunt, L Cheng, M O'Loughlin, J Richmond, A Burk, ST Allen, ... 2014 IEEE Energy Conversion Congress and Exposition (ECCE), 449-454, 2014 | 166 | 2014 |
| Comparative Evaluation of 15-kV SiC MOSFET and 15-kV SiC IGBT for Medium-Voltage Converter Under the Same dv/dt Conditions K Vechalapu, S Bhattacharya, E Van Brunt, SH Ryu, D Grider, ... IEEE Journal of Emerging and Selected Topics in Power Electronics 5 (1), 469-489, 2016 | 158 | 2016 |
| A new edge termination technique for high-voltage devices in 4H-SiC–multiple-floating-zone junction termination extension W Sung, E Van Brunt, BJ Baliga, AQ Huang IEEE Electron Device Letters 32 (7), 880-882, 2011 | 138 | 2011 |
| New generation 10kV SiC power MOSFET and diodes for industrial applications JB Casady, V Pala, DJ Lichtenwalner, E Van Brunt, B Hull, GY Wang, ... Proceedings of PCIM Europe 2015; International Exhibition and Conference for …, 2015 | 133 | 2015 |
| 27 kV, 20 A 4H-SiC n-IGBTs E Van Brunt, L Cheng, MJ O'Loughlin, J Richmond, V Pala, JW Palmour, ... Materials Science Forum 821, 847-850, 2015 | 132 | 2015 |
| Characterization of 15 kV SiC n-IGBT and its application considerations for high power converters A Kadavelugu, S Bhattacharya, SH Ryu, E Van Brunt, D Grider, A Agarwal, ... 2013 IEEE energy conversion congress and exposition, 2528-2535, 2013 | 123 | 2013 |
| The next generation of high voltage (10 kV) silicon carbide power modules B Passmore, Z Cole, B McGee, M Wells, J Stabach, J Bradshaw, R Shaw, ... 2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2016 | 109 | 2016 |
| Reliability and stability of SiC power mosfets and next-generation SiC MOSFETs B Hull, S Allen, Q Zhang, D Gajewski, V Pala, J Richmond, S Ryu, ... 2014 IEEE Workshop on Wide Bandgap Power Devices and Applications, 139-142, 2014 | 96 | 2014 |
| 22 kV, 1 cm2, 4H-SiC n-IGBTs with improved conductivity modulation EV Brunt, L Cheng, M O'Loughlin, C Capell, C Jonas, K Lam, J Richmond, ... 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's …, 2014 | 95 | 2014 |
| New generation 6.5 kV SiC power MOSFET S Sabri, E Van Brunt, A Barkley, B Hull, M O'Loughlin, A Burk, S Allen, ... 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2017 | 82 | 2017 |
| 20 kV, 2 cm2, 4H-SiC gate turn-off thyristors for advanced pulsed power applications L Cheng, AK Agarwal, C Capell, M O'Loughlin, K Lam, J Richmond, ... 2013 19th IEEE Pulsed Power Conference (PPC), 1-4, 2013 | 81 | 2013 |
| Short-circuit degradation of 10-kV 10-A SiC MOSFET EP Eni, S Bęczkowski, S Munk-Nielsen, T Kerekes, R Teodorescu, ... IEEE Transactions on Power Electronics 32 (12), 9342-9354, 2017 | 77 | 2017 |
| Reliability studies of SiC vertical power MOSFETs DJ Lichtenwalner, B Hull, E Van Brunt, S Sabri, DA Gajewski, D Grider, ... 2018 IEEE International Reliability Physics Symposium (IRPS), 2B. 2-1-2B. 2-6, 2018 | 69 | 2018 |
| Ultra high voltage IGBTs in 4H-SiC S Ryu, C Capell, C Jonas, Y Lemma, M O'Loughlin, J Clayton, ... The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, 36-39, 2013 | 52 | 2013 |
| Ultra high voltage MOS controlled 4H-SiC power switching devices S Ryu, C Capell, E Van Brunt, C Jonas, M O’Loughlin, J Clayton, K Lam, ... Semiconductor Science and Technology 30 (8), 084001, 2015 | 45 | 2015 |
| Experimental switching frequency limits of 15 kV SiC N-IGBT module A Kadavelugu, S Bhattacharya, SH Ryu, E Van Brunt, D Grider, S Leslie 2014 International Power Electronics Conference (IPEC-Hiroshima 2014-ECCE …, 2014 | 41 | 2014 |
| Performance and reliability impacts of extended epitaxial defects on 4H-SiC power devices E Van Brunt, A Burk, DJ Lichtenwalner, R Leonard, S Sabri, DA Gajewski, ... Materials science forum 924, 137-142, 2018 | 40 | 2018 |
| Reliability assessment of a large population of 3.3 kV, 45 A 4H-SIC MOSFETs E Van Brunt, DJ Lichtenwalner, R Leonard, A Burk, S Sabri, B Hull, ... 2017 29th International Symposium on Power Semiconductor Devices and IC's …, 2017 | 38 | 2017 |
| Physics of bipolar, unipolar and intermediate conduction modes in Silicon Carbide MOSFET body diodes V Pala, E Van Brunt, SH Ryu, B Hull, S Allen, J Palmour, A Hefner 2016 28th International Symposium on Power Semiconductor Devices and ICs …, 2016 | 36 | 2016 |
Sei-Hyung RyuWolfspeed在 wolfspeed.com 的电子邮件经过验证
