| Ultra-Low Power Robust 3bit/cell Hf0.5Zr0.5O2 Ferroelectric FinFET with High Endurance for Advanced Computing-In-Memory Technology S De, DD Lu, HH Le, S Mazumder, YJ Lee, WC Tseng, BH Qiu, MA Baig, ... 2021 symposium on VLSI technology, 1-2, 2021 | 75 | 2021 |
| Uniform crystal formation and electrical variability reduction in hafnium-oxide-based ferroelectric memory by thermal engineering S De, BH Qiu, WX Bu, MA Baig, PJ Sung, CJ Su, YJ Lee, DD Lu ACS Applied Electronic Materials 3 (2), 619-628, 2021 | 52 | 2021 |
| Random and Systematic Variation in Nanoscale Hf0.5Zr0.5O2 Ferroelectric FinFETs: Physical Origin and Neuromorphic Circuit Implications S De, MA Baig, BH Qiu, F Müller, HH Le, M Lederer, T Kämpfe, T Ali, ... Frontiers in Nanotechnology 3, 826232, 2022 | 46 | 2022 |
| Robust binary neural network operation from 233 K to 398 K via gate stack and bias optimization of ferroelectric FinFET synapses S De, HH Le, BH Qiu, MA Baig, PJ Sung, CJ Su, YJ Lee, DD Lu IEEE Electron Device Letters 42 (8), 1144-1147, 2021 | 33 | 2021 |
| Computationally efficient compact model for ferroelectric field-effect transistors to simulate the online training of neural networks DD Lu, S De, MA Baig, BH Qiu, YJ Lee Semiconductor Science and Technology 35 (9), 095007, 2020 | 31 | 2020 |
| First demonstration of heterogeneous IGZO/Si CFET monolithic 3-D integration with dual work function gate for ultralow-power SRAM and RF applications SW Chang, TH Lu, CY Yang, CJ Yeh, MK Huang, CF Meng, PJ Chen, ... IEEE Transactions on Electron Devices 69 (4), 2101-2107, 2022 | 27 | 2022 |
| Neuromorphic computing with fe-finfets in the presence of variation S De, MA Baig, BH Qiu, HH Le, YJ Lee, D Lu 2022 international symposium on vlsi technology, systems and applications …, 2022 | 26 | 2022 |
| Tri-gate ferroelectric fet characterization and modelling for online training of neural networks at room temperature and 233k S De, MA Baig, BH Qiu, D Lu, PJ Sung, FK Hsueh, YJ Lee, CJ Su 2020 Device Research Conference (DRC), 1-2, 2020 | 22 | 2020 |
| Compact model of retention characteristics of ferroelectric FinFET synapse with MFIS gate stack MA Baig, HH Le, S De, CW Chang, CC Hsieh, XS Huang, YJ Lee, DD Lu Semiconductor Science and Technology 37 (2), 024001, 2021 | 19 | 2021 |
| Neuromorphic computing with ferroelectric finfets in the presence of temperature, process variation, device aging and flicker noise S De, BH Qiu, WX Bu, MA Baig, CJ Su, YJ Lee, D Lu arXiv preprint arXiv:2103.13302, 2021 | 16 | 2021 |
| 3-d monolithic stacking of complementary-fet on cmos for next generation compute-in-memory sram MA Baig, CJ Yeh, SW Chang, BH Qiu, XS Huang, CH Tsai, YM Chang, ... IEEE Journal of the Electron Devices Society 11, 107-113, 2022 | 6 | 2022 |
| Alleviation of temperature variation induced accuracy degradation in ferroelectric finfet based neural network S De, HH Le, MA Baig, YJ Lee, DD Lu, T Kämpfe arXiv preprint arXiv:2103.03111, 2021 | 5 | 2021 |
| Roadmap of ferroelectric memories: From discovery to 3D integration S De, M Lederer, Y Raffel, F Müller, D Lehninger, A Sunbul, T Ali, ... Authorea Preprints, 2023 | 3 | 2023 |
| Stochastic variations in nanoscale HZO based ferroelectric finFETs: A synergistic approach of READ optimization and hybrid precision mixed signal WRITE operation to mitigate … S De, MA Baig, BH Qiu, HH Le, PJ Sung, CJ Su, YJ Lee, D Lu arXiv preprint arXiv:2008.10363, 2020 | 3 | 2020 |
| CIMulator: a comprehensive simulation platform for computing-in-memory circuit macros with low bit-width and real memory materials HH Le, MA Baig, WC Hong, CH Tsai, CJ Yeh, FX Liang, I Huang, WT Tsai, ... arXiv preprint arXiv:2306.14649, 2023 | 1 | 2023 |
| Random variation in nanoscale HfZrO2 ferroelectric FinFETs: Physical origin and neuromorphic system implications S De, MA Baig, BH Qiu, D Lu, YJ Lee, CJ Su, PJ Sung, FK Hsueh MAR. POLLUT. BULL., VOL, 11, 2020 | 1 | 2020 |
| Analyzing the Effects of Non-Ideal Synaptic Devices on Computing-in-Memory with Online Training Using the Accumulated Weight Update Algorithm MA Baig, HY Lu, CH Tsai, WC Hung, HH Le, S De, NY Chen, WJ Lee, ... Authorea Preprints, 2023 | | 2023 |
| Characterization and Modelling of Gate Length Impact on the Transient Negative Capacitance Induced Control of Short Channel Effect in Ferroelectric Fin-FETS S De, BH Qiu, JY Ciou, CJ Lin, WCT Chien-Wei-Wang, M Aftab Baig, ... arXiv e-prints, arXiv: 2007.13168, 2020 | | 2020 |
| Formation of Uniform Crystal and Reduction of Electrical Variation in HfZrO Ferroelectric Memory by Thermal Engineering S De, BH Qiu, MA Baig, DD Lu, YJ Lee arXiv preprint arXiv:2006.10691, 2020 | | 2020 |
| The advanced photonics laboratory at IIT-Madras B Gayathri, G Venkat, A Prabhakar Education and Training in Optics and Photonics: ETOP 2015 9793, 359-362, 2015 | | 2015 |
Sourav DeCollege of Semiconductor Research, National Tsing Hua University在 mx.nthu.edu.tw 的电子邮件经过验证
Sourav DeCollege of Semiconductor Research, National Tsing Hua University在 mx.nthu.edu.tw 的电子邮件经过验证
Darsen LuNCKU在 cal.berkeley.edu 的电子邮件经过验证
Hoang-Hiep LeMinghsin University of Science and Technology在 must.edu.tw 的电子邮件经过验证