Theoretical limit of low temperature subthreshold swing in field-effect transistors A Beckers, F Jazaeri, C Enz IEEE Electron Device Letters 41 (2), 276-279, 2019 | 175* | 2019 |
Cryogenic MOS transistor model A Beckers, F Jazaeri, C Enz IEEE Transactions on Electron Devices 65 (9), 3617-3625, 2018 | 161 | 2018 |
Characterization and modeling of 28-nm bulk CMOS technology down to 4.2 K A Beckers, F Jazaeri, C Enz IEEE Journal of the Electron Devices Society 6, 1007-1018, 2018 | 157 | 2018 |
A review on quantum computing: From qubits to front-end electronics and cryogenic MOSFET physics F Jazaeri, A Beckers, A Tajalli, JM Sallese 2019 MIXDES-26th International Conference" Mixed Design of Integrated …, 2019 | 123 | 2019 |
Characterization and modeling of 28-nm FDSOI CMOS technology down to cryogenic temperatures A Beckers, F Jazaeri, H Bohuslavskyi, L Hutin, S De Franceschi, C Enz Solid-State Electronics 159, 106-115, 2019 | 102 | 2019 |
Cryogenic characterization of 28 nm bulk CMOS technology for quantum computing A Beckers, F Jazaeri, A Ruffino, C Bruschini, A Baschirotto, C Enz 2017 47th European Solid-State Device Research Conference (ESSDERC), 62-65, 2017 | 91 | 2017 |
Physical model of low-temperature to cryogenic threshold voltage in MOSFETs A Beckers, F Jazaeri, A Grill, S Narasimhamoorthy, B Parvais, C Enz IEEE Journal of the Electron Devices Society 8, 780-788, 2020 | 85 | 2020 |
Cryogenic MOSFET threshold voltage model A Beckers, F Jazaeri, C Enz ESSDERC 2019-49th European Solid-State Device Research Conference (ESSDERC …, 2019 | 62 | 2019 |
Design-oriented modeling of 28 nm FDSOI CMOS technology down to 4.2 K for quantum computing A Beckers, F Jazaeri, H Bohuslavskyi, L Hutin, S De Franceschi, C Enz 2018 Joint International EUROSOI Workshop and International Conference on …, 2018 | 48 | 2018 |
Inflection phenomenon in cryogenic MOSFET behavior A Beckers, F Jazaeri, C Enz IEEE Transactions on Electron Devices 67 (3), 1357-1360, 2020 | 37 | 2020 |
Cryo-CMOS compact modeling C Enz, A Beckers, F Jazaeri 2020 IEEE International Electron Devices Meeting (IEDM), 25.3. 1-25.3. 4, 2020 | 33 | 2020 |
Understanding the excess 1/f noise in MOSFETs at cryogenic temperatures R Asanovski, A Grill, J Franco, P Palestri, A Beckers, B Kaczer, L Selmi IEEE Transactions on Electron Devices 70 (4), 2135-2141, 2023 | 20 | 2023 |
Generalized Boltzmann relations in semiconductors including band tails A Beckers, D Beckers, F Jazaeri, B Parvais, C Enz Journal of Applied Physics 129 (4), 2021 | 13 | 2021 |
A review on quantum computing: From qubits to front-end electronics and cryogenic MOSFET physics. In 2019 MIXDES-26th international conference mixed design of integrated … F Jazaeri, A Beckers, A Tajalli, JM Sallese IEEE. https://doi. org/10.23919/MIXDES, 2019 | 11 | 2019 |
Cryo-computing for infrastructure applications: A technology-to-microarchitecture co-optimization study D Prasad, M Vangala, M Bhargava, A Beckers, A Grill, D Tierno, ... 2022 International Electron Devices Meeting (IEDM), 23.5. 1-23.5. 4, 2022 | 10 | 2022 |
New insights on the excess 1/f noise at cryogenic temperatures in 28 nm CMOS and Ge MOSFETs for quantum computing applications R Asanovski, A Grill, J Franco, P Palestri, A Beckers, B Kaczer, L Selmi 2022 International Electron Devices Meeting (IEDM), 30.5. 1-30.5. 4, 2022 | 8 | 2022 |
Cryogenic MOSFET modeling for large-scale quantum computing ALM Beckers EPFL, 2021 | 8 | 2021 |
Energy filtering in silicon nanowires and nanosheets using a geometric superlattice and its use for steep-slope transistors A Beckers, M Thewissen, B Sorée Journal of Applied Physics 124 (14), 2018 | 7 | 2018 |
28-nm Bulk and FDSOI Cryogenic MOSFET A Beckers, F Jazaeri, C Enz 2018 IEEE International Conference on Integrated Circuits, Technologies and …, 2018 | 6 | 2018 |
Physics-based and closed-form model for cryo-CMOS subthreshold swing A Beckers, J Michl, A Grill, B Kaczer, MG Bardon, B Parvais, B Govoreanu, ... IEEE Transactions on Nanotechnology, 2023 | 3 | 2023 |