Основы импедансной спектроскопии композитов НА Поклонский, НИ Горбачук Минск: БГУ, 2005 | 110* | 2005 |
Magneto-optical transport properties of monolayer MoS2 on polar substrates CV Nguyen, NN Hieu, NA Poklonski, VV Ilyasov, L Dinh, TC Phong, ... Physical Review B 96 (12), 125411, 2017 | 108 | 2017 |
Tuning the Electronic Properties, Effective Mass and Carrier Mobility of MoS2 Monolayer by Strain Engineering: First-Principle Calculations HV Phuc, NN Hieu, BD Hoi, NV Hieu, TV Thu, NM Hung, VV Ilyasov, ... Journal of Electronic Materials 47, 730-736, 2018 | 80 | 2018 |
First-principles study of the structural and electronic properties of graphene/MoS2 interfaces NN Hieu, HV Phuc, VV Ilyasov, ND Chien, NA Poklonski, N Van Hieu, ... Journal of Applied Physics 122 (10), 2017 | 67 | 2017 |
Electrostatic models of insulator-metal and metal-insulator concentration phase transitions in Ge and Si crystals doped by hydrogen-like impurities NA Poklonski, SA Vyrko, AG Zabrodskii Physics of the Solid State 46, 1101-1106, 2004 | 62* | 2004 |
Synergy of physical properties of low-dimensional carbon-based systems for nanoscale device design NA Poklonski, SA Vyrko, AI Siahlo, ON Poklonskaya, SV Ratkevich, ... Materials Research Express 6 (4), 042002, 2019 | 58 | 2019 |
Negative capacitance (impedance of the inductive type) of silicon p +-n junctions irradiated with fast electrons NA Poklonski, SV Shpakovski, NI Gorbachuk, SB Lastovskii Semiconductors 40, 803-807, 2006 | 51* | 2006 |
Screening of electrostatic fields in crystalline semiconductors by electrons hopping over defects NA Poklonski, VF Stelmakh physica status solidi (b) 117 (1), 93-99, 1983 | 49 | 1983 |
A lattice model of nearest-neighbor hopping conduction and its application to neutron-doped Ge:Ga NA Poklonskii, SY Lopatin, AG Zabrodskii Physics of the Solid State 42 (3), 441-449, 2000 | 44* | 2000 |
Screening of electrostatic fields in semiconductors by multicharged defects NA Poklonskii, VF Stelmakh, VD Tkachev, SV Voitikov physica status solidi (b) 88 (2), K165-K168, 1978 | 43 | 1978 |
First principles study of optical properties of molybdenum disulfide: From bulk to monolayer NN Hieu, VV Ilyasov, TV Vu, NA Poklonski, HV Phuc, LTT Phuong, BD Hoi, ... Superlattices and Microstructures 115, 10-18, 2018 | 42 | 2018 |
Electronic, optical, and thermoelectric properties of Janus In-based monochalcogenides TV Vu, VTT Vi, HV Phuc, CV Nguyen, NA Poklonski, CA Duque, DP Rai, ... Journal of Physics: Condensed Matter 33 (22), 225503, 2021 | 41 | 2021 |
Electronic structure model of a metal-filled carbon nanotube NA Poklonskii, EF Kislyakov, GG Fedoruk, SA Vyrko Physics of the Solid State 42, 1966-1971, 2000 | 41* | 2000 |
Interaction of a graphene sheet with a ferromagnetic metal plate AD Phan, NA Viet, NA Poklonski, LM Woods, CH Le Physical Review B 86 (15), 155419 (5 pp.), 2012 | 38 | 2012 |
Статистическая физика полупроводников НА Поклонский, СА Вырко, СЛ Поденок М.: КомКнига (УРСС), 2005 | 38* | 2005 |
Calculation of capacitance of self-compensated semiconductors with intercenter hops of one and two electrons (by the example of silicon with radiation defects) NA Poklonski, SA Vyrko, AG Zabrodskii Semiconductors 42, 1388-1394, 2008 | 35* | 2008 |
Uniaxially deformed (5, 5) carbon nanotube: Structural transitions NA Poklonski, EF Kislyakov, NN Hieu, SA Vyrko, AM Popov, YE Lozovik Chemical Physics Letters 464 (4-6), 187-191, 2008 | 33* | 2008 |
A model of how the thermal ionization energy of impurities in semiconductors depends on their concentration and compensation NA Poklonskii, AI Syaglo, G Biskupski Semiconductors 33, 402-406, 1999 | 33* | 1999 |
Totally symmetric vibrational modes of fullerene C60 ON Bubel’, SA Vyrko, EF Kislyakov, NA Poklonskii Journal of Experimental and Theoretical Physics Letters 71, 508-510, 2000 | 32* | 2000 |
AA stacking, tribological and electronic properties of double-layer graphene with krypton spacer AM Popov, IV Lebedeva, AA Knizhnik, YE Lozovik, BV Potapkin, ... The Journal of Chemical Physics 139 (15), 154705 (11 pp.), 2013 | 31 | 2013 |