Residual metallic contamination of transferred chemical vapor deposited graphene G Lupina, J Kitzmann, I Costina, M Lukosius, C Wenger, A Wolff, S Vaziri, ... ACS nano 9 (5), 4776-4785, 2015 | 321 | 2015 |
A graphene-based hot electron transistor S Vaziri, G Lupina, C Henkel, AD Smith, M Östling, J Dabrowski, ... Nano letters 13 (4), 1435-1439, 2013 | 278 | 2013 |
Vertical graphene base transistor W Mehr, J Dabrowski, JC Scheytt, G Lippert, YH Xie, MC Lemme, ... IEEE Electron Device Letters 33 (5), 691-693, 2012 | 184 | 2012 |
Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device A Di Bartolomeo, F Giubileo, G Luongo, L Iemmo, N Martucciello, G Niu, ... 2D Materials 4 (1), 015024, 2016 | 161 | 2016 |
Hybrid graphene/silicon Schottky photodiode with intrinsic gating effect A Di Bartolomeo, G Luongo, F Giubileo, N Funicello, G Niu, T Schroeder, ... 2D Materials 4 (2), 025075, 2017 | 142 | 2017 |
Field emission from single and few-layer graphene flakes S Santandrea, F Giubileo, V Grossi, S Santucci, M Passacantando, ... Applied Physics Letters 98 (16), 163109, 2011 | 116 | 2011 |
Graphene growth on Ge (100)/Si (100) substrates by CVD method I Pasternak, M Wesolowski, I Jozwik, M Lukosius, G Lupina, P Dabrowski, ... Scientific reports 6 (1), 1-7, 2016 | 113 | 2016 |
Graphene field effect transistors with niobium contacts and asymmetric transfer characteristics A Di Bartolomeo, F Giubileo, F Romeo, P Sabatino, G Carapella, L Iemmo, ... Nanotechnology 26 (47), 475202, 2015 | 111 | 2015 |
Charge transfer and partial pinning at the contacts as the origin of a double dip in the transfer characteristics of graphene-based field-effect transistors A Di Bartolomeo, F Giubileo, S Santandrea, F Romeo, R Citro, ... Nanotechnology 22 (27), 275702, 2011 | 91 | 2011 |
Titanium-added praseodymium silicate high- layers on Si(001) T Schroeder, G Lupina, J Dabrowski, A Mane, C Wenger, G Lippert, ... Applied Physics Letters 87 (2), 022902, 2005 | 86 | 2005 |
Direct graphene growth on insulator G Lippert, J Dabrowski, M Lemme, C Marcus, O Seifarth, G Lupina physica status solidi (b) 248 (11), 2619-2622, 2011 | 83 | 2011 |
Graphene grown on Ge (001) from atomic source G Lippert, J Dąbrowski, T Schroeder, MA Schubert, Y Yamamoto, ... Carbon 75, 104-112, 2014 | 78 | 2014 |
Effect of back-gate on contact resistance and on channel conductance in graphene-based field-effect transistors A Di Bartolomeo, S Santandrea, F Giubileo, F Romeo, M Petrosino, ... Diamond and Related Materials 38, 19-23, 2013 | 76 | 2013 |
Contact resistance and mobility in back-gate graphene transistors F Urban, G Lupina, A Grillo, N Martucciello, A Di Bartolomeo Nano Express 1 (1), 010001, 2020 | 74 | 2020 |
Metal-free CVD graphene synthesis on 200 mm Ge/Si (001) substrates M Lukosius, J Dabrowski, J Kitzmann, O Fursenko, F Akhtar, M Lisker, ... ACS applied materials & interfaces 8 (49), 33786-33793, 2016 | 74 | 2016 |
Microscopic model for the nonlinear behavior of high- metal-insulator-metal capacitors C Wenger, G Lupina, M Lukosius, O Seifarth, HJ Müssig, S Pasko, C Lohe Journal of Applied Physics 103 (10), 104103, 2008 | 71 | 2008 |
Bilayer insulator tunnel barriers for graphene-based vertical hot-electron transistors S Vaziri, M Belete, ED Litta, AD Smith, G Lupina, MC Lemme, M Östling Nanoscale 7 (30), 13096-13104, 2015 | 61 | 2015 |
Thin high- dielectric layers on TiN for memory capacitor applications G Lupina, G Kozłowski, J Dabrowski, C Wenger, P Dudek, P Zaumseil, ... Applied Physics Letters 92 (6), 062906, 2008 | 57 | 2008 |
Structure and strain relaxation mechanisms of ultrathin epitaxial films on Si(111) T Schroeder, TL Lee, L Libralesso, I Joumard, J Zegenhagen, P Zaumseil, ... Journal of applied physics 97 (7), 074906, 2005 | 56 | 2005 |
Observation of field emission from GeSn nanoparticles epitaxially grown on silicon nanopillar arrays A Di Bartolomeo, M Passacantando, G Niu, V Schlykow, G Lupina, ... Nanotechnology 27 (48), 485707, 2016 | 55 | 2016 |