Power module electronics in HEV/EV applications: New trends in wide-bandgap semiconductor technologies and design aspects A Matallana, E Ibarra, I López, J Andreu, JI Garate, X Jordà, J Rebollo Renewable and Sustainable Energy Reviews 113, 109264, 2019 | 161 | 2019 |
SiC Schottky diodes for harsh environment space applications P Godignon, X Jordà, M Vellvehi, X Perpina, V Banu, D López, J Barbero, ... IEEE Transactions on Industrial Electronics 58 (7), 2582-2590, 2010 | 117 | 2010 |
Thermomechanical assessment of die-attach materials for wide bandgap semiconductor devices and harsh environment applications LA Navarro, X Perpina, P Godignon, J Montserrat, V Banu, M Vellvehi, ... IEEE transactions on Power Electronics 29 (5), 2261-2271, 2013 | 115 | 2013 |
Short-circuit study in medium-voltage GaN cascodes, p-GaN HEMTs, and GaN MISHEMTs M Fernández, X Perpiñà, J Roig-Guitart, M Vellvehi, F Bauwens, M Tack, ... IEEE Transactions on Industrial Electronics 64 (11), 9012-9022, 2017 | 95 | 2017 |
SiC integrated circuit control electronics for high-temperature operation M Alexandru, V Banu, X Jordà, J Montserrat, M Vellvehi, D Tournier, ... IEEE Transactions on Industrial Electronics 62 (5), 3182-3191, 2014 | 84 | 2014 |
Reliability and safety in railway X Perpinya BoD–Books on Demand, 2012 | 78 | 2012 |
Irradiance-based emissivity correction in infrared thermography for electronic applications M Vellvehi, X Perpiñà, GL Lauro, F Perillo, X Jordà Review of scientific instruments 82 (11), 2011 | 74 | 2011 |
Long-term reliability of railway power inverters cooled by heat-pipe-based systems X Perpina, X Jorda, M Vellvehi, J Rebollo, M Mermet-Guyennet IEEE transactions on industrial electronics 58 (7), 2662-2672, 2010 | 68 | 2010 |
P-GaN HEMTs drain and gate current analysis under short-circuit M Fernández, X Perpiñà, J Roig, M Vellvehi, F Bauwens, X Jordà, M Tack IEEE Electron Device Letters 38 (4), 505-508, 2017 | 61 | 2017 |
Analysis of clamped inductive turnoff failure in railway traction IGBT power modules under overload conditions X Perpina, JF Serviere, J Urresti-Ibañez, I Cortes, X Jorda, S Hidalgo, ... IEEE Transactions on Industrial Electronics 58 (7), 2706-2714, 2010 | 60 | 2010 |
Origin of large negative electrocaloric effect in antiferroelectric P Vales-Castro, R Faye, M Vellvehi, Y Nouchokgwe, X Perpiñà, ... Physical Review B 103 (5), 054112, 2021 | 58 | 2021 |
GaN metal-oxide-semiconductor field-effect transistor inversion channel mobility modeling A Pérez-Tomás, M Placidi, X Perpiñà, A Constant, P Godignon, X Jordà, ... Journal of Applied Physics 105 (11), 2009 | 56 | 2009 |
Use of ASICs in PWM techniques for power converters JM Retif, B Allard, X Jorda, A Perez Proceedings of IECON'93-19th Annual Conference of IEEE Industrial …, 1993 | 50 | 1993 |
High-frequency ultrasonic atomization with pulsed excitation A Lozano, H Amaveda, F Barreras, X Jorda, M Lozano J. Fluids Eng. 125 (6), 941-945, 2003 | 48 | 2003 |
IGBT module failure analysis in railway applications X Perpiñà, JF Serviere, X Jordà, A Fauquet, S Hidalgo, J Urresti-Ibañez, ... Microelectronics Reliability 48 (8-9), 1427-1431, 2008 | 44 | 2008 |
Schottky versus bipolar 3.3 kV SiC diodes A Pérez-Tomás, P Brosselard, J Hassan, X Jorda, P Godignon, M Placidi, ... Semiconductor Science and Technology 23 (12), 125004, 2008 | 43 | 2008 |
Bipolar conduction impact on electrical characteristics and reliability of 1.2-and 3.5-kV 4H-SiC JBS diodes P Brosselard, N Camara, V Banu, X Jordà, M Vellvehi, P Godignon, ... IEEE Transactions on Electron Devices 55 (8), 1847-1856, 2008 | 38 | 2008 |
Thermal resistance investigations on new leadframe-based LED packages and boards B Pardo, A Gasse, A Fargeix, J Jakovenko, RJ Werkhoven, X Perpiñà, ... Microelectronics Reliability 53 (8), 1084-1094, 2013 | 37 | 2013 |
Internal infrared laser deflection system: a tool for power device characterization X Perpiñà, X Jordà, N Mestres, M Vellvehi, P Godignon, J Millán, ... Measurement Science and Technology 15 (5), 1011, 2004 | 34 | 2004 |
Coupled electro-thermal simulation of a DC/DC converter M Vellvehi, X Jordà, P Godignon, C Ferrer, J Millán Microelectronics Reliability 47 (12), 2114-2121, 2007 | 33 | 2007 |