| Conductive atomic force microscope study of bipolar and threshold resistive switching in 2D hexagonal boron nitride films A Ranjan, N Raghavan, SJ O’shea, S Mei, M Bosman, K Shubhakar, ... Scientific reports 8 (1), 2854, 2018 | 67 | 2018 |
| Study of preferential localized degradation and breakdown of HfO2/SiOx dielectric stacks at grain boundary sites of polycrystalline HfO2 dielectrics K Shubhakar, KL Pey, N Raghavan, SS Kushvaha, M Bosman, Z Wang, ... Microelectronic engineering 109, 364-369, 2013 | 54 | 2013 |
| High-κ dielectric breakdown in nanoscale logic devices–Scientific insight and technology impact N Raghavan, KL Pey, K Shubhakar Microelectronics Reliability 54 (5), 847-860, 2014 | 49 | 2014 |
| Grain boundary assisted degradation and breakdown study in cerium oxide gate dielectric using scanning tunneling microscopy K Shubhakar, KL Pey, SS Kushvaha, SJ O’Shea, N Raghavan, M Bosman, ... Applied Physics Letters 98 (7), 2011 | 39 | 2011 |
| Modified Percolation Model for Polycrystalline High-Gate Stack With Grain Boundary Defects N Raghavan, KL Pey, K Shubhakar, M Bosman IEEE electron device letters 32 (1), 78-80, 2010 | 35 | 2010 |
| Random telegraph noise in 2D hexagonal boron nitride dielectric films A Ranjan, FM Puglisi, N Raghavan, SJ O'Shea, K Shubhakar, P Pavan, ... Applied Physics Letters 112 (13), 2018 | 30 | 2018 |
| Role of grain boundary percolative defects and localized trap generation on the reliability statistics of high-κ gate dielectric stacks N Raghavan, KL Pey, K Shubhakar, X Wu, WH Liu, M Bosman 2012 IEEE International Reliability Physics Symposium (IRPS), 6A. 1.1-6A. 1.11, 2012 | 25 | 2012 |
| Analysis of quantum conductance, read disturb and switching statistics in HfO2 RRAM using conductive AFM A Ranjan, N Raghavan, J Molina, SJ O'Shea, K Shubhakar, KL Pey Microelectronics Reliability 64, 172-178, 2016 | 24 | 2016 |
| Physical analysis of breakdown in high-κ/metal gate stacks using TEM/EELS and STM for reliability enhancement KL Pey, N Raghavan, X Wu, W Liu, X Li, M Bosman, K Shubhakar, ... Microelectronic engineering 88 (7), 1365-1372, 2011 | 22 | 2011 |
| Boron vacancies causing breakdown in 2D layered hexagonal boron nitride dielectrics A Ranjan, N Raghavan, FM Puglisi, S Mei, A Padovani, L Larcher, ... IEEE Electron Device Letters 40 (8), 1321-1324, 2019 | 21 | 2019 |
| Single vacancy defect spectroscopy on HfO2 using random telegraph noise signals from scanning tunneling microscopy R Thamankar, N Raghavan, J Molina, FM Puglisi, SJ O'Shea, ... Journal of Applied Physics 119 (8), 2016 | 21 | 2016 |
| New insight into the TDDB and breakdown reliability of novel high-к gate dielectric stacks KL Pey, N Raghavan, X Li, WH Liu, K Shubhakar, X Wu, M Bosman 2010 IEEE International Reliability Physics Symposium, 354-363, 2010 | 19 | 2010 |
| CAFM based spectroscopy of stress-induced defects in HfO2 with experimental evidence of the clustering model and metastable vacancy defect state A Ranjan, N Raghavan, K Shubhakar, R Thamankar, J Molina, SJ O'Shea, ... 2016 IEEE International Reliability Physics Symposium (IRPS), 7A-4-1-7A-4-7, 2016 | 18 | 2016 |
| Conductive filament formation at grain boundary locations in polycrystalline HfO2-based MIM stacks: Computational and physical insight K Shubhakar, S Mei, M Bosman, N Raghavan, A Ranjan, SJ O'Shea, ... Microelectronics Reliability 64, 204-209, 2016 | 14 | 2016 |
| Mechanism of soft and hard breakdown in hexagonal boron nitride 2D dielectrics A Ranjan, N Raghavan, SJ O'Shea, S Mei, M Bosman, K Shubhakar, ... 2018 IEEE International Reliability Physics Symposium (IRPS), 4A. 1-1-4A. 1-6, 2018 | 12 | 2018 |
| Localized characterization of charge transport and random telegraph noise at the nanoscale in HfO2 films combining scanning tunneling microscopy and multi-scale simulations R Thamankar, FM Puglisi, A Ranjan, N Raghavan, K Shubhakar, J Molina, ... Journal of Applied Physics 122 (2), 2017 | 12 | 2017 |
| 40nm embedded self-aligned split-gate flash technology for high-density automotive microcontrollers D Shum, LQ Luo, YJ Kong, FX Deng, X Qu, ZQ Teo, JQ Liu, F Zhang, ... 2017 IEEE International Memory Workshop (IMW), 1-4, 2017 | 12 | 2017 |
| Functionality demonstration of a high-density 2.5 v self-aligned split-gate nvm cell embedded into 40nm cmos logic process for automotive microcontrollers LQ Luo, ZQ Teo, YJ Kong, FX Deng, JQ Liu, F Zhang, XS Cai, KM Tan, ... 2016 IEEE 8th International Memory Workshop (IMW), 1-4, 2016 | 12 | 2016 |
| The “buffering” role of high-к in post breakdown degradation immunity of advanced dual layer dielectric gate stacks N Raghavan, A Padovani, X Wu, K Shubhakar, M Bosman, L Larcher, ... 2013 IEEE International Reliability Physics Symposium (IRPS), 5A. 3.1-5A. 3.8, 2013 | 12 | 2013 |
| Impact of local structural and electrical properties of grain boundaries in polycrystalline HfO2 on reliability of SiOx interfacial layer K Shubhakar, N Raghavan, SS Kushvaha, M Bosman, ZR Wang, ... Microelectronics Reliability 54 (9-10), 1712-1717, 2014 | 10 | 2014 |
Nagarajan RaghavanAssociate Professor, Singapore University of Technology & Design (SUTD)在 sutd.edu.sg 的电子邮件经过验证
