| 500Bipolar Integrated OR/NOR Gate in 4H-SiC L Lanni, BG Malm, M Östling, CM Zetterling IEEE Electron Device Letters 34 (9), 1091-1093, 2013 | 112 | 2013 |
| A monolithic, 500 C operational amplifier in 4H-SiC bipolar technology R Hedayati, L Lanni, S Rodriguez, BG Malm, A Rusu, CM Zetterling IEEE Electron Device Letters 35 (7), 693-695, 2014 | 89 | 2014 |
| Design and characterization of high-temperature ECL-based bipolar integrated circuits in 4H-SiC L Lanni, R Ghandi, BG Malm, CM Zetterling, M Ostling IEEE Transactions on Electron Devices 59 (4), 1076-1083, 2012 | 67 | 2012 |
| Bipolar integrated circuits in SiC for extreme environment operation CM Zetterling, A Hallén, R Hedayati, S Kargarrazi, L Lanni, BG Malm, ... Semiconductor Science and Technology 32 (3), 034002, 2017 | 44 | 2017 |
| 500° C bipolar SiC linear voltage regulator S Kargarrazi, L Lanni, S Saggini, A Rusu, CM Zetterling IEEE Transactions on Electron Devices 62 (6), 1953-1957, 2015 | 44 | 2015 |
| A monolithic SiC drive circuit for SiC Power BJTs S Kargarrazi, L Lanni, A Rusu, CM Zetterling 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's …, 2015 | 37 | 2015 |
| Wide temperature range integrated bandgap voltage references in 4H–SiC R Hedayati, L Lanni, A Rusu, CM Zetterling IEEE Electron Device Letters 37 (2), 146-149, 2015 | 33 | 2015 |
| Influence of passivation oxide thickness and device layout on the current gain of SiC BJTs L Lanni, BG Malm, M Östling, CM Zetterling IEEE Electron Device Letters 36 (1), 11-13, 2014 | 30 | 2014 |
| Silicon carbide fully differential amplifier characterized up to 500° C Y Tian, L Lanni, A Rusu, CM Zetterling IEEE Transactions on Electron Devices 63 (6), 2242-2247, 2016 | 25 | 2016 |
| A study on positive-feedback configuration of a bipolar SiC high temperature operational amplifier S Kargarrazi, L Lanni, CM Zetterling Solid-State Electronics 116, 33-37, 2016 | 25 | 2016 |
| SiC etching and sacrificial oxidation effects on the performance of 4H-SiC BJTs L Lanni, BG Malm, M Östling, CM Zetterling Materials Science Forum 778, 1005-1008, 2014 | 25 | 2014 |
| Design and characterization of 500° C Schmitt trigger in 4H-SiC S Kargarrazi, L Lanni, CM Zetterling Materials Science Forum 821, 897-901, 2015 | 22 | 2015 |
| Future high temperature applications for SiC integrated circuits CM Zetterling, L Lanni, R Ghandi, BG Malm, M Östling physica status solidi c 9 (7), 1647-1650, 2012 | 22 | 2012 |
| High gamma ray tolerance for 4H-SiC bipolar circuits SS Suvanam, SI Kuroki, L Lanni, R Hadayati, T Ohshima, T Makino, ... IEEE Transactions on Nuclear Science 64 (2), 852-858, 2016 | 21 | 2016 |
| Lateral pnp transistors and complementary SiC bipolar technology L Lanni, BG Malm, M Östling, CM Zetterling IEEE electron device letters 35 (4), 428-430, 2014 | 21 | 2014 |
| ECL-based SiC logic circuits for extreme temperatures L Lanni, BG Malm, M Östling, CM Zetterling Materials Science Forum 821, 910-913, 2015 | 20 | 2015 |
| A 500° C 8-b digital-to-analog converter in silicon carbide bipolar technology R Hedayati, L Lanni, BG Malm, A Rusu, CM Zetterling IEEE Transactions on Electron Devices 63 (9), 3445-3450, 2016 | 19 | 2016 |
| Silicon carbide bipolartechnology for high temperature integrated circuits L Lanni KTH Royal Institute of Technology, 2014 | 18 | 2014 |
| A 4H-SiC bipolar technology for high-temperature integrated circuits L Lanni, BG Malm, CM Zetterling, M Östling Journal of microelectronics and electronic packaging 10 (4), 155-162, 2013 | 17 | 2013 |
| Characterization of Ohmic Ni/Ti/Al and Ni Contacts to 4H-SiC from-40 C to 500 C K Smedfors, L Lanni, M Östling, CM Zetterling Materials Science Forum 778, 681-684, 2014 | 14 | 2014 |
