| Mobility extraction in SOI MOSFETs with sub 1 nm body thickness M Schmidt, MC Lemme, HDB Gottlob, F Driussi, L Selmi, H Kurz Solid-state electronics 53 (12), 1246-1251, 2009 | 82 | 2009 |
| Long term charge retention dynamics of SONOS cells A Arreghini, N Akil, F Driussi, D Esseni, L Selmi, MJ Van Duuren Solid-State Electronics 52 (9), 1460-1466, 2008 | 70 | 2008 |
| Explanation of the charge trapping properties of silicon nitride storage layers for NVMs—Part II: Atomistic and electrical modeling E Vianello, F Driussi, P Blaise, P Palestri, D Esseni, L Perniola, G Molas, ... IEEE Transactions on Electron Devices 58 (8), 2490-2499, 2011 | 61 | 2011 |
| Experimental and simulation analysis of program/retention transients in silicon nitride-based NVM cells E Vianello, F Driussi, A Arreghini, P Palestri, D Esseni, L Selmi, N Akil, ... IEEE transactions on electron devices 56 (9), 1980-1990, 2009 | 60 | 2009 |
| Effects of thermal treatments on the trapping properties of HfO2 films for charge trap memories S Spiga, F Driussi, A Lamperti, G Congedo, O Salicio Applied Physics Express 5 (2), 021102, 2012 | 59 | 2012 |
| Experimental characterization of the vertical position of the trapped charge in Si nitride-based nonvolatile memory cells A Arreghini, F Driussi, E Vianello, D Esseni, MJ van Duuren, ... IEEE Transactions on Electron Devices 55 (5), 1211-1219, 2008 | 58 | 2008 |
| Analytical models for the insight into the use of alternative channel materials in ballistic nano-MOSFETs M De Michielis, D Esseni, F Driussi IEEE Transactions on Electron Devices 54 (1), 115-123, 2006 | 55 | 2006 |
| A quantitative error analysis of the mobility extraction according to the Matthiessen rule in advanced MOS transistors D Esseni, F Driussi IEEE Transactions on Electron Devices 58 (8), 2415-2422, 2011 | 51 | 2011 |
| Going ballistic: Graphene hot electron transistors S Vaziri, AD Smith, M Östling, G Lupina, J Dabrowski, G Lippert, W Mehr, ... Solid State Communications 224, 64-75, 2015 | 47 | 2015 |
| On the origin of the mobility reduction in n-and p-metal–oxide–semiconductor field effect transistors with hafnium-based/metal gate stacks P Toniutti, P Palestri, D Esseni, F Driussi, M De Michielis, L Selmi Journal of Applied Physics 112 (3), 2012 | 42 | 2012 |
| Comparison of modeling approaches for the capacitance–voltage and current–voltage characteristics of advanced gate stacks P Palestri, N Barin, D Brunel, C Busseret, A Campera, PA Childs, ... IEEE Transactions on Electron Devices 54 (1), 106-114, 2006 | 42 | 2006 |
| Modeling, simulation and design of the vertical Graphene Base Transistor F Driussi, P Palestri, L Selmi Microelectronic Engineering 109, 338-341, 2013 | 37 | 2013 |
| Explanation of the charge-trapping properties of silicon nitride storage layers for NVM devices part I: Experimental evidences from physical and electrical characterizations E Vianello, F Driussi, L Perniola, G Molas, JP Colonna, B De Salvo, ... IEEE transactions on electron devices 58 (8), 2483-2489, 2011 | 36 | 2011 |
| Modeling and design of FTJs as multi-level low energy memristors for neuromorphic computing R Fontanini, M Segatto, M Massarotto, R Specogna, F Driussi, M Loghi, ... IEEE Journal of the Electron Devices Society 9, 1202-1209, 2021 | 32 | 2021 |
| Simulation of DC and RF performance of the graphene base transistor S Venica, F Driussi, P Palestri, D Esseni, S Vaziri, L Selmi IEEE Transactions on Electron Devices 61 (7), 2570-2576, 2014 | 31 | 2014 |
| On the adequacy of the transmission line model to describe the graphene–metal contact resistance S Venica, F Driussi, A Gahoi, P Palestri, MC Lemme, L Selmi IEEE Transactions on Electron Devices 65 (4), 1589-1596, 2018 | 30 | 2018 |
| New charge pumping model for the analysis of the spatial trap distribution in the nitride layer of SONOS devices A Arreghini, F Driussi, D Esseni, L Selmi, MJ Van Duuren, R Van Schaijk Microelectronic Engineering 80, 333-336, 2005 | 30 | 2005 |
| Impact of the charge transport in the conduction band on the retention of Si-nitride based memories E Vianello, F Driussi, P Palestri, A Arreghini, D Esseni, L Selmi, N Akil, ... ESSDERC 2008-38th European Solid-State Device Research Conference, 107-110, 2008 | 27 | 2008 |
| Damage generation and location in n-and p-MOSFETs biased in the substrate-enhanced gate current regime F Driussi, D Esseni, L Selmi, F Piazza IEEE Transactions on Electron Devices 49 (5), 787-794, 2002 | 27 | 2002 |
| On the electron mobility enhancement in biaxially strained Si MOSFETs F Driussi, D Esseni, L Selmi, PE Hellström, G Malm, J Ha, M Östling, ... Solid-state electronics 52 (4), 498-505, 2008 | 23 | 2008 |
