| Temperature dependence of barrier height inhomogeneity in β-Ga2O3 Schottky barrier diodes A Jadhav, LAM Lyle, Z Xu, KK Das, LM Porter, B Sarkar Journal of Vacuum Science & Technology B 39 (4), 2021 | 24 | 2021 |
| Generalized frequency dependent small signal model for high frequency analysis of AlGaN/GaN MOS-HEMTs A Jadhav, T Ozawa, A Baratov, JT Asubar, M Kuzuhara, A Wakejima, ... IEEE Journal of the Electron Devices Society 9, 570-581, 2021 | 7 | 2021 |
| Deep learning-based fast BSIM-CMG parameter extraction for general input dataset A Ashai, A Jadhav, AK Behera, S Roy, A Dasgupta, B Sarkar IEEE Transactions on Electron Devices 70 (7), 3437-3441, 2023 | 6 | 2023 |
| Modified small signal circuit of AlGaN/GaN MOS-HEMTs using rational functions A Jadhav, T Ozawa, A Baratov, JT Asubar, M Kuzuhara, A Wakejima, ... IEEE Transactions on Electron Devices 68 (12), 6059-6064, 2021 | 5 | 2021 |
| Role of Interface Induced Gap States in Polar AlxGa1−xN (0 ≤ x ≤ 1) Schottky Diodes A Jadhav, Y Dai, P Upadhyay, W Guo, B Sarkar Journal of Electronic Materials 50, 3731-3738, 2021 | 5 | 2021 |
| An Accurate Approach to Develop Small Signal Circuit Models for AlGaN/GaN HEMTs Using Rational Functions and Dependent Current Sources A Jadhav, T Ozawa, A Baratov, JT Asubar, M Kuzuhara, A Wakejima, ... IEEE Journal of the Electron Devices Society 10, 797-807, 2022 | | 2022 |
Sourajeet RoyAssociate Professor, IIT Roorkee在 iitr.ac.in 的电子邮件经过验证
Sourajeet RoyAssociate Professor, IIT Roorkee在 iitr.ac.in 的电子邮件经过验证