| Coherence and Decay of Higher Energy Levels of a Superconducting Transmon Qubit MJ Peterer, SJ Bader, X Jin, F Yan, A Kamal, TJ Gudmundsen, PJ Leek, ... Physical Review Letters 114 (1), 010501, 2015 | 209 | 2015 |
| A polarization-induced 2D hole gas in undoped gallium nitride quantum wells R Chaudhuri, SJ Bader, Z Chen, DA Muller, HG Xing, D Jena Science 365 (6460), 1454-1457, 2019 | 138 | 2019 |
| High Breakdown Voltage in RF AlN/GaN/AlN Quantum Well HEMTs A Hickman, R Chaudhuri, SJ Bader, K Nomoto, K Lee, HG Xing, D Jena IEEE Electron Device Letters 40 (8), 1293-1296, 2019 | 112 | 2019 |
| Prospects for Wide Bandgap and Ultrawide Bandgap CMOS Devices SJ Bader, H Lee, R Chaudhuri, S Huang, A Hickman, A Molnar, HG Xing, ... IEEE Transactions on Electron Devices 67 (10), 4010-4020, 2020 | 101 | 2020 |
| GaN HEMTs on Si With Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz L Li, K Nomoto, M Pan, W Li, A Hickman, J Miller, K Lee, Z Hu, SJ Bader, ... IEEE Electron Device Letters 41 (5), 689-692, 2020 | 93 | 2020 |
| Gate-recessed E-mode p-channel HFET with high on-current based on GaN/AlN 2D hole gas SJ Bader, R Chaudhuri, K Nomoto, A Hickman, Z Chen, HW Then, ... IEEE Electron Device Letters 39 (12), 1848-1851, 2018 | 83 | 2018 |
| Next generation electronics on the ultrawide-bandgap aluminum nitride platform AL Hickman, R Chaudhuri, SJ Bader, K Nomoto, L Li, JCM Hwang, ... Semiconductor Science and Technology 36 (4), 044001, 2021 | 69 | 2021 |
| High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy M Qi, K Nomoto, M Zhu, Z Hu, Y Zhao, V Protasenko, B Song, X Yan, G Li, ... Applied Physics Letters 107 (23), 232101, 2015 | 68 | 2015 |
| First RF Power Operation of AlN/GaN/AlN HEMTs With> 3 A/mm and 3 W/mm at 10 GHz A Hickman, R Chaudhuri, L Li, K Nomoto, SJ Bader, JCM Hwang, ... IEEE Journal of the Electron Devices Society 9, 121-124, 2020 | 54 | 2020 |
| A New Holistic Model of 2-D Semiconductor FETs EG Marin, SJ Bader, D Jena IEEE Transactions on Electron Devices 65 (3), 1239-1245, 2018 | 45 | 2018 |
| GaN/AlN p-channel HFETs with Imax >420 mA/mm and ~20 GHz fT / fMAX K Nomoto, R Chaudhuri, SJ Bader, L Li, A Hickman, S Huang, H Lee, ... 2020 IEEE International Electron Devices Meeting (IEDM), 8.3. 1-8.3. 4, 2020 | 35 | 2020 |
| Advanced Scaling of Enhancement Mode High-K Gallium Nitride-on-300mm-Si (111) Transistor and 3D Layer Transfer GaN-Silicon Finfet CMOS Integration HW Then, M Radosavljevic, P Koirala, N Thomas, N Nair, I Ban, ... 2021 IEEE International Electron Devices Meeting (IEDM), 11.1. 1-11.1. 4, 2021 | 32 | 2021 |
| GaN/AlN Schottky-gate p-channel HFETs with InGaN contacts and 100 mA/mm on-current SJ Bader, R Chaudhuri, A Hickman, K Nomoto, S Bharadwaj, HW Then, ... 2019 IEEE International Electron Devices Meeting (IEDM), 4.5. 1-4.5. 4, 2019 | 31 | 2019 |
| Wurtzite phonons and the mobility of a GaN/AlN 2D hole gas SJ Bader, R Chaudhuri, MF Schubert, HW Then, HG Xing, D Jena Applied Physics Letters 114 (25), 2019 | 27 | 2019 |
| Scaled Submicron Field-Plated Enhancement Mode High-K Gallium Nitride Transistors on 300mm Si (111) Wafer with Power FoM (R ON xQ GG) of 3.1 mohm-nC at 40V and f T/f MAX of 130 … HW Then, M Radosavljevic, P Koirala, M Beumer, S Bader, A Zubair, ... 2022 International Electron Devices Meeting (IEDM), 35.1. 1-35.1. 4, 2022 | 17 | 2022 |
| Terahertz spectroscopy of an electron-hole bilayer system in AlN/GaN/AlN quantum wells H Condori Quispe, SM Islam, S Bader, A Chanana, K Lee, R Chaudhuri, ... Applied Physics Letters 111 (7), 2017 | 15 | 2017 |
| Enhancement-mode 300-mm GaN-on-Si (111) with integrated Si CMOS for future mm-wave RF applications HW Then, M Radosavljevic, Q Yu, A Latorre-Rey, H Vora, S Bader, ... IEEE Microwave and Wireless Technology Letters 33 (6), 835-838, 2023 | 12 | 2023 |
| 5G mmWave Power Amplifier and Low-Noise Amplifier in 300mm GaN-on-Si Technology Q Yu, HW Then, D Thomson, J Chou, J Garrett, I Huang, I Momson, ... 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 11 | 2022 |
| Molecular Beam Epitaxy Growth of Large‐Area GaN/AlN 2D Hole Gas Heterostructures R Chaudhuri, SJ Bader, Z Chen, D Muller, HG Xing, D Jena physica status solidi (b) 257 (4), 1900567, 2020 | 10 | 2020 |
| Molecular Beam Epitaxy Growth of Large‐Area GaN/AlN 2D Hole Gas Heterostructures R Chaudhuri, SJ Bader, Z Chen, D Muller, HG Xing, D Jena physica status solidi (b) 257 (4), 1900567, 2020 | 10 | 2020 |
Debdeep JenaCornell University在 cornell.edu 的电子邮件经过验证
