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Hanxiao Liu
Hanxiao Liu
在 asu.edu 的电子邮件经过验证
标题
引用次数
引用次数
年份
Efficient and ultraviolet durable inverted organic solar cells based on an aluminum-doped zinc oxide transparent cathode
H Liu, Z Wu, J Hu, Q Song, B Wu, H Lam Tam, Q Yang, W Hong Choi, ...
Applied Physics Letters 103 (4), 135_1, 2013
802013
Investigation of GaN-on-GaN vertical p-n diode with regrown p-GaN by metalorganic chemical vapor deposition
K Fu, H Fu, H Liu, SR Alugubelli, TH Yang, X Huang, H Chen, ...
Applied Physics Letters 113 (23), 233502, 2018
652018
100‐nm thick single‐phase wurtzite BAlN films with boron contents over 10%
X Li, S Wang, H Liu, FA Ponce, T Detchprohm, RD Dupuis
physica status solidi (b) 254 (8), 1600699, 2017
532017
Implantation-and etching-free high voltage vertical GaN p–n diodes terminated by plasma-hydrogenated p-GaN: revealing the role of thermal annealing
H Fu, K Fu, H Liu, SR Alugubelli, X Huang, H Chen, J Montes, TH Yang, ...
Applied Physics Express 12 (5), 051015, 2019
402019
Non-uniform Mg distribution in GaN epilayers grown on mesa structures for applications in GaN power electronics
H Liu, H Fu, K Fu, SR Alugubelli, PY Su, Y Zhao, FA Ponce
Applied Physics Letters 114 (8), 082102, 2019
352019
CdCl2 passivation of polycrystalline CdMgTe and CdZnTe absorbers for tandem photovoltaic cells
DE Swanson, C Reich, A Abbas, T Shimpi, H Liu, FA Ponce, JM Walls, ...
Journal of Applied Physics 123 (20), 203101, 2018
352018
GaN Vertical-Channel Junction Field-Effect Transistors With Regrown p-GaN by MOCVD
C Yang, H Fu, VN Kumar, K Fu, H Liu, X Huang, TH Yang, H Chen, J Zhou, ...
IEEE Transactions on Electron Devices 67 (10), 3972-3977, 2020
302020
Nonpolar vertical GaN-on-GaN p–n diodes grown on free-standing m-plane GaN substrates
H Fu, X Zhang, K Fu, H Liu, SR Alugubelli, X Huang, H Chen, ...
Applied Physics Express 11 (11), 111003, 2018
272018
Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress
H Fu, K Fu, C Yang, H Liu, KA Hatch, P Peri, DH Mudiyanselage, B Li, ...
Materials Today 49, 296-323, 2021
262021
Dopant profiling in p-i-n GaN structures using secondary electrons
SR Alugubelli, H Fu, K Fu, H Liu, Y Zhao, FA Ponce
Journal of Applied Physics 126 (1), 015704, 2019
252019
The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices
K Fu, H Fu, X Deng, PY Su, H Liu, K Hatch, CY Cheng, D Messina, ...
Applied Physics Letters 118 (22), 222104, 2021
192021
Determination of electronic band structure by electron holography of etched-and-regrown interfaces in GaN p-i-n diodes
SR Alugubelli, H Fu, K Fu, H Liu, Y Zhao, MR McCartney, FA Ponce
Applied Physics Letters 115 (20), 201602, 2019
182019
Lateral and vertical growth of Mg-doped GaN on trench-patterned GaN films
PY Su, H Liu, C Yang, K Fu, H Fu, Y Zhao, FA Ponce
Applied Physics Letters 117 (10), 102110, 2020
172020
Correlation between size distribution and luminescence properties of spool-shaped InAs quantum dots
H Xie, R Prioli, G Torelly, H Liu, AM Fischer, R Jakomin, R Mourão, ...
Semiconductor Science and Technology 32 (5), 055013, 2017
122017
Demonstration of GaN-based metal–insulator–semiconductor junction by hydrogen plasma treatment
C Yang, H Fu, PY Su, H Liu, K Fu, X Huang, TH Yang, H Chen, J Zhou, ...
Applied Physics Letters 117 (5), 052105, 2020
92020
Influence of substrate misorientation on the optical properties of Mg-doped GaN
H Liu, PY Su, Z Wu, R Liu, FA Ponce
Journal of Applied Physics 127 (19), 195701, 2020
82020
Dislocation baskets in thick InxGa1−xN epilayers
S Wang, H Xie, H Liu, AM Fischer, H McFavilen, FA Ponce
Journal of Applied Physics 124 (10), 105701, 2018
52018
Characterization of MOCVD regrown p-GaN and the interface properties for vertical GaN power devices
K Fu, X Qi, H Fu, PY Su, H Liu, TH Yang, C Yang, J Montes, J Zhou, ...
Semiconductor Science and Technology 36 (1), 014005, 2020
42020
The effect of low-angle off-axis GaN substrate orientation on the surface morphology of Mg-doped GaN epilayers
PY Su, H Liu, S Wang, Z Wu, R Liu, FA Ponce
Journal of Applied Physics 128 (5), 055301, 2020
42020
Effect of InAs quantum dots capped with GaAs on atomic-scale ordering in Ga0.5In0.5P
PY Su, H Liu, RMS Kawabata, EC Weiner, R Jakomin, MP Pires, RR King, ...
Journal of Applied Physics 125 (5), 053104, 2019
32019
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