| A new approach for broken rotor bar detection in induction motors using frequency extraction in stray flux signals PA Panagiotou, I Arvanitakis, N Lophitis, JA Antonino-Daviu, KN Gyftakis IEEE Transactions on Industry Applications 55 (4), 3501-3511, 2019 | 75 | 2019 |
| TCAD device modelling and simulation of wide bandgap power semiconductors N Lophitis, A Arvanitopoulos, S Perkins, M Antoniou, YK Sharma Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their …, 2018 | 40 | 2018 |
| On the Investigation of the “Anode Side” SuperJunction IGBT Design Concept M Antoniou, N Lophitis, F Udrea, F Bauer, UR Vemulapati, U Badstuebner IEEE Electron Device Letters, 2017 | 36 | 2017 |
| Novel approach towards plasma enhancement in Trench Insulated Gate Bipolar Transistors M Antoniou, N Lophitis, I Lestas, F Udrea, F Bauer, M Bellini, I Nistor, ... IEEE Electron Device Letters 36 (8), 823 - 825, 2015 | 32 | 2015 |
| Analysis of stray flux spectral components in induction machines under rotor bar breakages at various locations PA Panagiotou, I Arvanitakis, N Lophitis, JA Antonino-Daviu, KN Gyftakis 2018 XIII International Conference on Electrical Machines (ICEM), 2345-2351, 2018 | 31 | 2018 |
| The destruction mechanism in GCTs N Lophitis, M Antoniou, F Udrea, FD Bauer, I Nistor, M Arnold, T Wikstrom, ... IEEE transactions on electron devices 60 (2), 819-826, 2013 | 30 | 2013 |
| Validated physical models and parameters of bulk 3C–SiC aiming for credible technology computer aided design (TCAD) simulation A Arvanitopoulos, N Lophitis, KN Gyftakis, S Perkins, M Antoniou Semiconductor Science and Technology 32 (10), 104009, 2017 | 28 | 2017 |
| Retrograde p-well for 10-kV class SiC IGBTs AK Tiwari, M Antoniou, N Lophitis, S Perkin, T Trajkovic, F Udrea IEEE Transactions on Electron Devices 66 (7), 3066-3072, 2019 | 26 | 2019 |
| Physical parameterisation of 3C-Silicon Carbide (SiC) with scope to evaluate the suitability of the material for power diodes as an alternative to 4H-SiC A Arvanitopoulos, N Lophitis, S Perkins, KN Gyftakis, MB Guadas, ... 2017 IEEE 11th International Symposium on Diagnostics for Electrical …, 2017 | 23 | 2017 |
| A Content and Language Integrated Learning (CLIL) Project: Opportunities and challenges in the context of heritage language education M Charalampidi, M Hammond, N Hadjipavlou, N Lophitis The European Conference on Language Learning 2017 Official Conference …, 2017 | 21 | 2017 |
| Experimental demonstration of the p-ring FS+ Trench IGBT concept: A new design for minimizing the conduction losses M Antoniou, N Lophitis, F Udrea, F Bauer, I Nistor, M Bellini, M Rahimo 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's …, 2015 | 18 | 2015 |
| Experimentally validated three dimensional GCT wafer level simulations N Lophitis, M Antoniou, F Udrea, I Nistor, M Arnold, T Wikström, J Vobecky 2012 24th International Symposium on Power Semiconductor Devices and ICs …, 2012 | 18 | 2012 |
| On the broken rotor bar diagnosis using time–frequency analysis:‘Is one spectral representation enough for the characterisation of monitored signals?’ PA Panagiotou, I Arvanitakis, N Lophitis, JA Antonino‐Daviu, KN Gyftakis IET Electric Power Applications 13 (7), 932-942, 2019 | 16 | 2019 |
| FEM approach for diagnosis of induction machines' non‐adjacent broken rotor bars by short‐time Fourier transform spectrogram PA Panagiotou, I Arvanitakis, N Lophitis, JA Antonino‐Daviu, KN Gyftakis The Journal of Engineering 2019 (17), 4566-4570, 2019 | 16 | 2019 |
| Parameters influencing the maximum controllable current in gate commutated thyristors N Lophitis, M Antoniou, F Udrea, I Nistor, M Arnold, T Wikstrom, J Vobecky IET Circuits, Devices & Systems 8 (3), 221-226, 2014 | 16 | 2014 |
| Parameters influencing the maximum controllable current in gate commutated thyristors N Lophitis, M Antoniou, F Udrea, I Nistor, M Arnold, T Wikstrom, J Vobecky IET Circuits, Devices & Systems 8 (3), 221-226, 2014 | 16 | 2014 |
| On the suitability of 3C-Silicon Carbide as an alternative to 4H-Silicon Carbide for power diodes AE Arvanitopoulos, M Antoniou, S Perkins, M Jennings, MB Guadas, ... IEEE Transactions on Industry Applications 55 (4), 4080-4090, 2019 | 15 | 2019 |
| High voltage semiconductor device with reduced peak electric field in active and termination areas of the device P Ward, N Lophitis, T Trajkovic, F Udrea US Patent 10,157,979, 2018 | 13 | 2018 |
| Gate commutated thyristor with voltage independent maximum controllable current N Lophitis, M Antoniou, F Udrea, I Nistor, MT Rahimo, M Arnold, ... IEEE electron device letters 34 (8), 954-956, 2013 | 12 | 2013 |
| Breakdown resistance analysis of traction motor winding insulation under thermal ageing KN Gyftakis, PA Panagiotou, N Lophitis, DA Howey, MD McCulloch 2017 IEEE Energy Conversion Congress and Exposition (ECCE), 5819-5825, 2017 | 11 | 2017 |
Marina AntoniouUniversity of Warwick在 warwick.ac.uk 的电子邮件经过验证
