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Liang He
Liang He
Professor, Nanjing University, China
在 nju.edu.cn 的电子邮件经过验证 - 首页
标题
引用次数
引用次数
年份
Magnetization switching through giant spin–orbit torque in a magnetically doped topological insulator heterostructure
Y Fan, P Upadhyaya, X Kou, M Lang, S Takei, Z Wang, J Tang, L He, ...
Nature materials 13, 699, 2014
10002014
Scale-invariant quantum anomalous Hall effect in magnetic topological insulators beyond the two-dimensional limit
X Kou, ST Guo, Y Fan, L Pan, M Lang, Y Jiang, Q Shao, T Nie, K Murata, ...
Physical review letters 113 (13), 137201, 2014
6162014
Manipulating surface states in topological insulator nanoribbons
F Xiu, L He, Y Wang, L Cheng, LT Chang, M Lang, G Huang, X Kou, ...
Nature nanotechnology 6 (4), 216-221, 2011
5012011
Room-temperature intrinsic ferromagnetism in epitaxial CrTe2 ultrathin films
X Zhang, Q Lu, W Liu, W Niu, J Sun, J Cook, M Vaninger, PF Miceli, ...
Nature communications 12 (1), 2492, 2021
2442021
Proximity induced high-temperature magnetic order in topological insulator-ferrimagnetic insulator heterostructure
M Lang, M Montazeri, MC Onbasli, X Kou, Y Fan, P Upadhyaya, K Yao, ...
Nano letters 14 (6), 3459-3465, 2014
2442014
Weak Anti-localization and Quantum Oscillations of Surface States in Topological Insulator Bi2Se2Te
L Bao, L He, N Meyer, X Kou, P Zhang, Z Chen, AV Fedorov, J Zou, ...
Scientific Reports 2, 726, 2012
2252012
A robust and tuneable mid-infrared optical switch enabled by bulk Dirac fermions
C Zhu, F Wang, Y Meng, X Yuan, F Xiu, H Luo, Y Wang, J Li, X Lv, L He, ...
Nature Communications 8 (1), 14111, 2017
2132017
Electrical Detection of Spin-Polarized Surface States Conduction in (Bi0.53Sb0.47)2Te3 Topological Insulator
J Tang, LT Chang, X Kou, K Murata, ES Choi, M Lang, Y Fan, Y Jiang, ...
Nano letters 14 (9), 5423-5429, 2014
2072014
Surface-Dominated Conduction in a 6 nm thick Bi2Se3 Thin Film
L He, F Xiu, X Yu, M Teague, W Jiang, Y Fan, X Kou, M Lang, Y Wang, ...
Nano letters 12 (3), 1486-1490, 2012
2022012
Review of 3D topological insulator thin‐film growth by molecular beam epitaxy and potential applications
L He, X Kou, KL Wang
physica status solidi (RRL)-Rapid Research Letters 7, 50-63, 2013
1842013
Novel germanium-based magnetic semiconductors
F Tsui, L He, L Ma, A Tkachuk, YS Chu, K Nakajima, T Chikyow
Physical review letters 91 (17), 177203, 2003
1742003
Epitaxial growth of Bi2Se3 topological insulator thin films on Si (111)
L He, F Xiu, Y Wang, AV Fedorov, G Huang, X Kou, M Lang, ...
Journal of Applied Physics 109 (10), 2011
1712011
Towards van der Waals epitaxial growth of GaAs on Si using a graphene buffer layer
Y Alaskar, S Arafin, D Wickramaratne, MA Zurbuchen, L He, J McKay, ...
Advanced Functional Materials 24 (42), 6629-6638, 2014
1662014
Competing Weak Localization and Weak Antilocalization in Ultrathin Topological Insulators
M Lang, L He, X Kou, P Upadhyaya, Y Fan, H Chu, Y Jiang, JH Bardarson, ...
Nano Letters 13 (1), 48-53, 2012
1662012
Gate-Controlled Surface Conduction in Na-Doped Bi2Te3 Topological Insulator Nanoplates
Y Wang, F Xiu, L Cheng, L He, M Lang, J Tang, X Kou, X Yu, X Jiang, ...
Nano letters 12 (3), 1170-1175, 2012
1562012
Interplay between different magnetisms in Cr-doped topological insulators
X Kou, M Lang, Y Fan, Y Jiang, T Nie, J Zhang, W Jiang, Y Wang, Y Yao, ...
ACS nano 7 (10), 9205-9212, 2013
1512013
Revelation of Topological Surface States in Bi2Se3 Thin Films by In Situ Al Passivation
M Lang, L He, F Xiu, X Yu, J Tang, Y Wang, X Kou, W Jiang, AV Fedorov, ...
ACS nano 6 (1), 295-302, 2012
1222012
Manipulating surface-related ferromagnetism in modulation-doped topological insulators
X Kou, L He, M Lang, Y Fan, K Wong, Y Jiang, T Nie, W Jiang, ...
Nano letters 13 (10), 4587-4593, 2013
1022013
Epitaxial growth of high mobility Bi2Se3 thin films on CdS
XF Kou, L He, FX Xiu, MR Lang, ZM Liao, Y Wang, AV Fedorov, XX Yu, ...
Applied Physics Letters 98 (24), 242102-242102-3, 2011
1022011
Magnetically doped semiconducting topological insulators
XF Kou, WJ Jiang, MR Lang, FX Xiu, L He, Y Wang, XX Yu, AV Fedorov, ...
Journal of Applied Physics 112 (6), 2012
982012
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