| Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies G Verzellesi, D Saguatti, M Meneghini, F Bertazzi, M Goano, ... Journal of Applied Physics 114 (7), 2013 | 465 | 2013 |
| Theory of high field carrier transport and impact ionization in wurtzite GaN. Part I: A full band Monte Carlo model F Bertazzi, M Moresco, E Bellotti Journal of Applied Physics 106 (6), 2009 | 132 | 2009 |
| Physics‐based modeling and experimental implications of trap‐assisted tunneling in InGaN/GaN light‐emitting diodes M Mandurrino, G Verzellesi, M Goano, M Vallone, F Bertazzi, G Ghione, ... physica status solidi (a) 212 (5), 947-953, 2015 | 119 | 2015 |
| A numerical study of Auger recombination in bulk InGaN F Bertazzi, M Goano, E Bellotti Applied Physics Letters 97 (23), 2010 | 106 | 2010 |
| Electronic structure of wurtzite ZnO: Nonlocal pseudopotential and ab initio calculations M Goano, F Bertazzi, M Penna, E Bellotti Journal of Applied Physics 102 (8), 2007 | 101 | 2007 |
| Numerical analysis of indirect Auger transitions in InGaN F Bertazzi, M Goano, E Bellotti Applied Physics Letters 101 (1), 2012 | 88 | 2012 |
| Alloy scattering in AlGaN and InGaN: A numerical study E Bellotti, F Bertazzi, M Goano Journal of Applied Physics 101 (12), 2007 | 83 | 2007 |
| Role of defects in the thermal droop of InGaN-based light emitting diodes C De Santi, M Meneghini, M La Grassa, B Galler, R Zeisel, M Goano, ... Journal of Applied Physics 119 (9), 2016 | 77 | 2016 |
| Simulation of quantum dot solar cells including carrier intersubband dynamics and transport M Gioannini, AP Cedola, N Di Santo, F Bertazzi, F Cappelluti IEEE Journal of Photovoltaics 3 (4), 1271-1278, 2013 | 69 | 2013 |
| A general conformal-mapping approach to the optimum electrode design of coplanar waveguides with arbitrary cross section M Goano, F Bertazzi, P Caravelli, G Ghione, TA Driscoll IEEE Transactions on Microwave Theory and Techniques 49 (9), 1573-1580, 2001 | 64 | 2001 |
| Auger recombination in InGaN/GaN quantum wells: A full-Brillouin-zone study F Bertazzi, X Zhou, M Goano, G Ghione, E Bellotti Applied Physics Letters 103 (8), 2013 | 63 | 2013 |
| Thermal droop in III-nitride based light-emitting diodes: Physical origin and perspectives M Meneghini, C De Santi, A Tibaldi, M Vallone, F Bertazzi, G Meneghesso, ... Journal of applied Physics 127 (21), 2020 | 62 | 2020 |
| A numerical study of carrier impact ionization in AlxGa1− xN E Bellotti, F Bertazzi Journal of Applied Physics 111 (10), 2012 | 56 | 2012 |
| Hydrodynamic transport parameters of wurtzite ZnO from analytic-and full-band Monte Carlo simulation E Furno, F Bertazzi, M Goano, G Ghione, E Bellotti Solid-state electronics 52 (11), 1796-1801, 2008 | 55 | 2008 |
| Electron and hole transport in bulk ZnO: A full band Monte Carlo study F Bertazzi, M Goano, E Bellotti Journal of Electronic Materials 36, 857-863, 2007 | 54 | 2007 |
| A fast reduced-order model for the full-wave FEM analysis of lossy inhomogeneous anisotropic waveguides F Bertazzi, OA Peverini, M Goano, G Ghione, R Orta, R Tascone IEEE transactions on microwave theory and techniques 50 (9), 2108-2114, 2002 | 50 | 2002 |
| Semiclassical simulation of trap-assisted tunneling in GaN-based light-emitting diodes M Mandurrino, M Goano, M Vallone, F Bertazzi, G Ghione, G Verzellesi, ... Journal of Computational Electronics 14, 444-455, 2015 | 48 | 2015 |
| Full-band Monte Carlo simulation of HgCdTe APDs F Bertazzi, M Moresco, M Penna, M Goano, E Bellotti Journal of Electronic Materials 39, 912-917, 2010 | 47 | 2010 |
| Numerical modeling of SRH and tunneling mechanisms in high-operating-temperature MWIR HgCdTe photodetectors M Vallone, M Mandurrino, M Goano, F Bertazzi, G Ghione, W Schirmacher, ... Journal of Electronic Materials 44, 3056-3063, 2015 | 43 | 2015 |
| VENUS: A vertical-cavity surface-emitting laser electro-opto-thermal numerical simulator A Tibaldi, F Bertazzi, M Goano, R Michalzik, P Debernardi IEEE Journal of Selected Topics in Quantum Electronics 25 (6), 1-12, 2019 | 42 | 2019 |
