| Plasma enhanced atomic layer deposition with pulsed plasma exposure JS Sims, J Henri, KM Kelchner, SBSV Janjam, S Tang US Patent 9,076,646, 2015 | 514 | 2015 |
| Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays SP DenBaars, D Feezell, K Kelchner, S Pimputkar, CC Pan, CC Yen, ... Acta Materialia 61 (3), 945-951, 2013 | 477 | 2013 |
| Methods and apparatuses for uniform reduction of the in-feature wet etch rate of a silicon nitride film formed by ALD JS Sims, KM Kelchner, J Henri, DM Hausmann US Patent 9,214,333, 2015 | 415 | 2015 |
| Nitride film formed by plasma-enhanced and thermal atomic layer deposition process JS Sims, KM Kelchner US Patent 9,865,455, 2018 | 327 | 2018 |
| High-brightness polarized light-emitting diodes E Matioli, S Brinkley, KM Kelchner, YL Hu, S Nakamura, S DenBaars, ... Light: Science & Applications 1 (8), e22-e22, 2012 | 307 | 2012 |
| Semi-polar III-nitride optoelectronic devices on M-plane substrates with miscuts less than+/-15 degrees in the C-direction PS Hsu, KM Kelchner, RM Farrell, DA Haeger, H Ohta, A Tyagi, ... US Patent 9,077,151, 2015 | 265 | 2015 |
| Superluminescent diodes by crystallographic etching MT Hardy, YD Lin, H Ohta, SP DenBaars, JS Speck, S Nakamura, ... US Patent App. 12/913,638, 2011 | 253 | 2011 |
| Method for depositing metals free ald silicon nitride films using halide-based precursors JS Sims, J Henri, R Chandrasekharan, AJ McKerrow, S Varadarajan, ... US Patent 9,824,884, 2017 | 249 | 2017 |
| AlGaN-cladding free green semipolar GaN based laser diode with a lasing wavelength of 506.4 nm A Tyagi, RM Farrell, KM Kelchner, CY Huang, PS Hsu, DA Haeger, ... | 121 | 2010 |
| Continuous-wave operation of AlGaN-cladding-free nonpolar m-plane InGaN/GaN laser diodes RM Farrell, DF Feezell, MC Schmidt, DA Haeger, KM Kelchner, K Iso, ... Japanese Journal of Applied Physics 46 (8L), L761, 2007 | 104 | 2007 |
| Blue-green InGaN/GaN laser diodes on miscut m-plane GaN substrate YD Lin, MT Hardy, PS Hsu, KM Kelchner, CY Huang, DA Haeger, ... Applied physics express 2 (8), 082102, 2009 | 79 | 2009 |
| Nonpolar AlGaN-cladding-free blue laser diodes with InGaN waveguiding KM Kelchner, YD Lin, MT Hardy, CY Huang, PS Hsu, RM Farrell, ... Applied Physics Express 2 (7), 071003, 2009 | 60 | 2009 |
| Photoexcited carrier recombination in wide m-plane InGaN/GaN quantum wells S Marcinkevicius, KM Kelchner, LY Kuritzky, S Nakamura, SP DenBaars, ... Applied Physics Letters 103 (11), 111107-111107-5, 2013 | 58 | 2013 |
| Pulsed high-power AlGaN-cladding-free blue laser diodes on semipolar (202 1) GaN substrates A Pourhashemi, RM Farrell, MT Hardy, PS Hsu, KM Kelchner, JS Speck, ... Applied Physics Letters 103 (15), 2013 | 53 | 2013 |
| m-Plane GaN-based blue superluminescent diodes fabricated using selective chemical wet etching MT Hardy, KM Kelchner, YD Lin, PS Hsu, K Fujito, H Ohta, JS Speck, ... Applied Physics Express 2 (12), 121004, 2009 | 49 | 2009 |
| Polarized light extraction in m-plane GaN light-emitting diodes by embedded photonic-crystals E Matioli, S Brinkley, KM Kelchner, S Nakamura, S DenBaars, J Speck, ... Applied Physics Letters 98 (25), 2011 | 46 | 2011 |
| Semipolar iii-nitride laser diodes with etched mirrors A Tyagi, RM Farrell, CY Huang, PS Hsu, DA Haeger, KM Kelchner, ... US Patent App. 12/908,478, 2011 | 43 | 2011 |
| Optical properties of extended and localized states in m-plane InGaN quantum wells S Marcinkevičius, KM Kelchner, S Nakamura, SP DenBaars, JS Speck Applied Physics Letters 102 (10), 2013 | 42 | 2013 |
| InGaN/GaN blue laser diode grown on semipolar (3031) free-standing GaN substrates PS Hsu, KM Kelchner, A Tyagi, RM Farrell, DA Haeger, K Fujito, H Ohta, ... Applied physics express 3 (5), 052702, 2010 | 41 | 2010 |
| Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes RM Farrell, DA Haeger, X Chen, M Iza, A Hirai, KM Kelchner, K Fujito, ... Journal of crystal growth 313 (1), 1-7, 2010 | 40 | 2010 |
Jim SpeckProfessor of Materials, UCSB在 ucsb.edu 的电子邮件经过验证
