| Structural, Optical, and Electrical Characterization of Monoclinic β-Ga2O3 Grown by MOVPE on Sapphire Substrates MJ Tadjer, MA Mastro, NA Mahadik, M Currie, VD Wheeler, JA Freitas, ... Journal of Electronic Materials 45, 2031-2037, 2016 | 147 | 2016 |
| Substrate-dependent effects on the response of AlGaN/GaN HEMTs to 2-MeV proton irradiation TJ Anderson, AD Koehler, JD Greenlee, BD Weaver, MA Mastro, JK Hite, ... IEEE electron device letters 35 (8), 826-828, 2014 | 93 | 2014 |
| On the radiation tolerance of AlGaN/GaN HEMTs BD Weaver, TJ Anderson, AD Koehler, JD Greenlee, JK Hite, DI Shahin, ... ECS Journal of Solid State Science and Technology 5 (7), Q208, 2016 | 86 | 2016 |
| Effect of reduced extended defect density in MOCVD grown AlGaN/GaN HEMTs on native GaN substrates TJ Anderson, MJ Tadjer, JK Hite, JD Greenlee, AD Koehler, KD Hobart, ... IEEE Electron Device Letters 37 (1), 28-30, 2015 | 68 | 2015 |
| Symmetric multicycle rapid thermal annealing: Enhanced activation of implanted dopants in GaN JD Greenlee, BN Feigelson, TJ Anderson, JK Hite, KD Hobart, FJ Kub ECS Journal of Solid State Science and Technology 4 (9), P382, 2015 | 63 | 2015 |
| Selective p-type doping of GaN: Si by Mg ion implantation and multicycle rapid thermal annealing MJ Tadjer, BN Feigelson, JD Greenlee, JA Freitas, TJ Anderson, JK Hite, ... ECS Journal of Solid State Science and Technology 5 (2), P124, 2015 | 58 | 2015 |
| Observation and control of the surface kinetics of InGaN for the elimination of phase separation M Moseley, B Gunning, J Greenlee, J Lowder, G Namkoong, ... Journal of Applied Physics 112 (1), 2012 | 53 | 2012 |
| Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs JD Greenlee, P Specht, TJ Anderson, AD Koehler, BD Weaver, ... Applied physics letters 107 (8), 2015 | 48 | 2015 |
| Multicycle rapid thermal annealing optimization of Mg-implanted GaN: Evolution of surface, optical, and structural properties JD Greenlee, BN Feigelson, TJ Anderson, MJ Tadjer, JK Hite, MA Mastro, ... Journal of Applied Physics 116 (6), 2014 | 47 | 2014 |
| Improved vertical GaN Schottky diodes with ion implanted junction termination extension TJ Anderson, JD Greenlee, BN Feigelson, JK Hite, FJ Kub, KD Hobart ECS Journal of Solid State Science and Technology 5 (6), Q176, 2016 | 44 | 2016 |
| In-situ oxygen x-ray absorption spectroscopy investigation of the resistance modulation mechanism in LiNbO2 memristors JD Greenlee, CF Petersburg, W Laws Calley, C Jaye, DA Fischer, ... Applied Physics Letters 100 (18), 2012 | 42 | 2012 |
| Comparison of interfacial and bulk ionic motion in analog memristors JD Greenlee, WL Calley, MW Moseley, WA Doolittle IEEE Transactions on Electron Devices 60 (1), 427-432, 2012 | 41 | 2012 |
| Proton radiation-induced void formation in Ni/Au-gated AlGaN/GaN HEMTs AD Koehler, P Specht, TJ Anderson, BD Weaver, JD Greenlee, MJ Tadjer, ... IEEE Electron Device Letters 35 (12), 1194-1196, 2014 | 40 | 2014 |
| Improvements in the annealing of Mg ion implanted GaN and related devices TJ Anderson, JD Greenlee, BN Feigelson, JK Hite, KD Hobart, FJ Kub ieee transactions on Semiconductor manufacturing 29 (4), 343-348, 2016 | 39 | 2016 |
| Characterization of an Mg‐implanted GaN p–i–n diode JD Greenlee, TJ Anderson, BN Feigelson, KD Hobart, FJ Kub physica status solidi (a) 212 (12), 2772-2775, 2015 | 38 | 2015 |
| Impact of surface passivation on the dynamic on-resistance of proton-irradiated AlGaN/GaN HEMTs AD Koehler, TJ Anderson, MJ Tadjer, BD Weaver, JD Greenlee, ... IEEE Electron Device Letters 37 (5), 545-548, 2016 | 37 | 2016 |
| Ultraviolet detector based on graphene/SiC heterojunction TJ Anderson, KD Hobart, JD Greenlee, DI Shahin, AD Koehler, MJ Tadjer, ... Applied Physics Express 8 (4), 041301, 2015 | 36 | 2015 |
| Halide based MBE of crystalline metals and oxides JD Greenlee, WL Calley, W Henderson, WA Doolittle physica status solidi c 9 (2), 155-160, 2012 | 29 | 2012 |
| Spatial mapping of pristine and irradiated AlGaN/GaN HEMTs with UV single-photon absorption single-event transient technique A Khachatrian, NJH Roche, SP Buchner, AD Koehler, JD Greenlee, ... IEEE Transactions on Nuclear Science 63 (4), 1995-2001, 2016 | 24 | 2016 |
| Characterization of a selective AlN wet etchant JD Greenlee, TJ Anderson, BN Feigelson, AD Koehler, KD Hobart, FJ Kub Applied Physics Express 8 (3), 036501, 2015 | 23 | 2015 |
Andrew D. KoehlerNaval Research Laboratory在 nrl.navy.mil 的电子邮件经过验证
