| Doping of n-type 6H–SiC and 4H–SiC with defects created with a proton beam AA Lebedev, AI Veinger, DV Davydov, VV Kozlovski, NS Savkina, ... Journal of Applied Physics 88 (11), 6265-6271, 2000 | 148 | 2000 |
| Direct evidence for diffusion and electromigration of Cu in CuInSe2 K Gartsman, L Chernyak, V Lyahovitskaya, D Cahen, V Didik, V Kozlovsky, ... Journal of Applied Physics 82 (9), 4282-4285, 1997 | 137 | 1997 |
| Модифицирование полупроводников пучками протонов В Козловский СПб; Изд-во "Наука", 2003 | 129* | 2003 |
| МОДИФИЦИРОВАНИЕ ПОЛУПРОВОДНИКОВ ПУЧКАМИ ПРОТОНОВ. ОБЗОР ВВ КОЗЛОВСКИЙ, ВА КОЗЛОВ, ВН ЛОМАСОВ ФИЗИКА И ТЕХНИКА ПОЛУПРОВОДНИКОВ 34 (2), 129-147, 2000 | 129 | 2000 |
| ЛЕГИРОВАНИЕ ПОЛУПРОВОДНИКОВ РАДИАЦИОННЫМИ ДЕФЕКТАМИ ПРИ ОБЛУЧЕНИИ ПРОТОНАМИ И AЛЬФA-ЧАСТИЦАМИ ВА Козлов, ВВ Козловский Физика и техника полупроводников. 35 (7), 769-795, 2001 | 116 | 2001 |
| Doping of semiconductors using radiation defects produced by irradiation with protons and alpha particles VA Kozlov, VV Kozlovski Semiconductors 35, 735-761, 2001 | 101 | 2001 |
| Radiation defect engineering K Vitali, V Abrosimova World Scientific, 2005 | 66 | 2005 |
| Point defects in γ-irradiated n-GaN VV Emtsev, VY Davydov, VV Kozlovskii, VV Lundin, DS Poloskin, ... Semiconductor Science and Technology 15 (1), 73-78, 2000 | 63 | 2000 |
| Similarities and distinctions of defect production by fast electron and proton irradiation: Moderately doped silicon and silicon carbide of n-type VV Emtsev, AM Ivanov, VV Kozlovski, AA Lebedev, GA Oganesyan, ... Semiconductors 46, 456-465, 2012 | 58 | 2012 |
| Model for conductivity compensation of moderately doped n-and p-4H-SiC by high-energy electron bombardment VV Kozlovski, AA Lebedev, EV Bogdanova Journal of Applied Physics 117 (15), 2015 | 44 | 2015 |
| Impact of high energy electron irradiation on high voltage Ni/4H-SiC Schottky diodes VV Kozlovski, AA Lebedev, ME Levinshtein, SL Rumyantsev, JW Palmour Applied Physics Letters 110 (8), 2017 | 43 | 2017 |
| Radiation hardness of wide-gap semiconductors (using the example of silicon carbide) AA Lebedev, VV Kozlovski, NB Strokan, DV Davydov, AM Ivanov, ... Semiconductors 36, 1270-1275, 2002 | 42 | 2002 |
| DLTS study of defects in 6H-and 4H-SiC created by proton irradiation DV Davydov, AA Lebedev, VV Kozlovski, NS Savkina, AM Strel’chuk Physica B: Condensed Matter 308, 641-644, 2001 | 39 | 2001 |
| Transmutation Doping of Indium Phosphide and Gallium Arsenide Due to Protons and α‐Particles LF Zakharenkov, VV Kozlovskii, BA Shustrov physica status solidi (a) 117 (1), 85-90, 1990 | 39 | 1990 |
| Electrical and noise properties of proton irradiated 4H-SiC Schottky diodes VV Kozlovski, AA Lebedev, ME Levinshtein, SL Rumyantsev, JW Palmour Journal of Applied Physics 123 (2), 2018 | 37 | 2018 |
| The Semiconductor Doping with Radiation Induced Defects via Proton and α-Particle Irradiation. Semiconductors VA Kozlov, VV Kozlovski Physics of the Solid State 35 (7), 769-795, 2001 | 33 | 2001 |
| Обработка экспериментальных данных БД Агапьев, ВН Белов, ФП Кесаманлы, ВВ Козловский, МС И. СПб.; Изд-во "СПбГТУ", 2001 | 32 | 2001 |
| Radiation-stimulated photoluminescence in electron irradiated 4H-SiC AA Lebedev, BY Ber, NV Seredova, DY Kazantsev, VV Kozlovski Journal of Physics D: Applied Physics 48 (48), 485106, 2015 | 31 | 2015 |
| Influence of proton irradiation on recombination current in 6H–SiC pn structures AM Strel'chuk, VV Kozlovski, NS Savkina, MG Rastegaeva, AN Andreev Materials Science and Engineering: B 61, 441-445, 1999 | 30 | 1999 |
| Modification of semiconductors with proton beams VV Kozlovskiǐ, VA Kozlov, VN Lomasov Semiconductors 34 (2), 123-140, 2000 | 29 | 2000 |
