| Single-ended Schmitt-trigger-based robust low-power SRAM cell S Ahmad, MK Gupta, N Alam, M Hasan IEEE Transactions on Very Large Scale Integration (VLSI) Systems 24 (8 …, 2016 | 164 | 2016 |
| Robust TFET SRAM cell for ultra-low power IoT applications S Ahmad, N Alam, M Hasan AEU-International Journal of Electronics and Communications 89, 70-76, 2018 | 78 | 2018 |
| Low leakage fully half-select-free robust SRAM cells with BTI reliability analysis S Ahmad, B Iqbal, N Alam, M Hasan IEEE Transactions on Device and Materials Reliability 18 (3), 337-349, 2018 | 70 | 2018 |
| Low Leakage Single Bitline 9T (SB9T) Static Random Access Memory MH Sayeed Ahmad, M. K. Gupta, Naushad Alam Microelectronics Journal 62, 1-11, 2017 | 69 | 2017 |
| Pseudo differential multi-cell upset immune robust SRAM cell for ultra-low power applications S Ahmad, N Alam, M Hasan AEU-International Journal of Electronics and Communications 83, 366-375, 2018 | 59 | 2018 |
| Dopingless tunnel field-effect transistor with oversized back gate: proposal and investigation MA Raushan, N Alam, MJ Siddiqui IEEE Transactions on Electron Devices 65 (10), 4701-4708, 2018 | 42 | 2018 |
| TFET-Based Robust 7T SRAM Cell for Low Power Applications S Ahmad, SA Ahmad, M Muqeem, N Alam, M Hasan IEEE Transactions on Electron Devices 66 (9), 3834 - 3840, 2019 | 41 | 2019 |
| Impact of asymmetric dual-k spacers on tunnel field effect transistors MA Raushan, N Alam, MW Akram, MJ Siddiqui Journal of Computational Electronics 17, 756-765, 2018 | 24 | 2018 |
| Systematic design of CNTFET based OTA and Op amp using g m/I D technique M Yasir, N Alam Analog Integrated Circuits and Signal Processing 102 (2), 293–307, 2020 | 18 | 2020 |
| Carbon nanotube interconnects for low-power high-speed applications N Alam, AK Kureshi, M Hasan, T Arslan 2009 IEEE International Symposium on Circuits and Systems, 2273-2276, 2009 | 18 | 2009 |
| Multifinger MOSFETs’ optimization considering stress and INWE in static CMOS circuits A Sharma, N Alam, S Dasgupta, A Bulusu IEEE Transactions on Electron Devices 63 (6), 2517-2523, 2016 | 17 | 2016 |
| Performance Enhancement of Junctionless Tunnel Field Effect Transistor Using Dual-k Spacers MA Raushan, N Alam, MJ Siddiqui Journal of Nanoelectronics and Optoelectronics 13 (6), 912-920, 2018 | 16 | 2018 |
| Design of CNTFET based CCII using gm/ID technique for low voltage and low power applications M Yasir, N Alam Journal of Circuits, Systems and Computers 29 (9), 1-20, 2020 | 15 | 2020 |
| Analysis of carbon nanotube interconnects and their comparison with Cu interconnects N Alam, AK Kureshi, M Hasan, T Arslan 2009 International Multimedia, Signal Processing and Communication …, 2009 | 15 | 2009 |
| Effective current model for inverter-transmission gate structure and its application in circuit design A Sharma, N Alam, A Bulusu IEEE Transactions on Electron Devices 64 (10), 4002-4010, 2017 | 13 | 2017 |
| Efficient ECSM characterization considering voltage, temperature, and mechanical stress variability B Kaur, N Alam, SK Manhas, B Anand IEEE Transactions on Circuits and Systems I: Regular Papers 61 (12), 3407-3415, 2014 | 13 | 2014 |
| CNTFET based circuit design for improved performance IA Khan, N Alam 2019 International Conference on Electrical, Electronics and Computer …, 2019 | 11 | 2019 |
| Electrostatically doped drain junctionless transistor for low-power applications MA Raushan, N Alam, MJ Siddiqui Journal of Computational Electronics 18 (3), 864–871, 2019 | 11 | 2019 |
| Process induced mechanical stress aware poly-pitch optimization for enhanced circuit performance N Alam, B Anand, S Dasgupta Thirteenth International Symposium on Quality Electronic Design (ISQED), 717-722, 2012 | 11 | 2012 |
| Design of a triple pocket multi-gate material TFET structure for low-power applications SA Ahmad, N Alam Semiconductor Science and Technology 36 (2), 025015, 2021 | 10 | 2021 |
Mohammad HasanDepartment of Electronics Engineering, Aligarh Muslim University在 amu.ac.in 的电子邮件经过验证
