| Temperature measurement of power semiconductor devices by thermo-sensitive electrical parameters—A review Y Avenas, L Dupont, Z Khatir IEEE transactions on power electronics 27 (6), 3081-3092, 2011 | 575 | 2011 |
| Comparison of junction temperature evaluations in a power IGBT module using an IR camera and three thermosensitive electrical parameters L Dupont, Y Avenas, PO Jeannin IEEE Transactions on Industry Applications 49 (4), 1599-1608, 2013 | 260 | 2013 |
| Improved Reliability of Power Modules: A Review of Online Junction Temperature Measurement Methods N Baker, M Liserre, L Dupont, Y Avenas Industrial Electronics Magazine, IEEE 8 (3), 17-27, 2014 | 242 | 2014 |
| IGBT junction temperature measurement via peak gate current N Baker, S Munk-Nielsen, F Iannuzzo, M Liserre IEEE Transactions on Power Electronics 31 (5), 3784-3793, 2015 | 153 | 2015 |
| Effects of metallization thickness of ceramic substrates on the reliability of power assemblies under high temperature cycling L Dupont, Z Khatir, S Lefebvre, S Bontemps Microelectronics Reliability 46 (9-11), 1766-1771, 2006 | 143 | 2006 |
| Condition monitoring: A decade of proposed techniques Y Avenas, L Dupont, N Baker, H Zara, F Barruel IEEE Industrial Electronics Magazine 9 (4), 22-36, 2015 | 119 | 2015 |
| Degradation behavior of 600 V–200 A IGBT modules under power cycling and high temperature environment conditions M Bouarroudj, Z Khatir, JP Ousten, F Badel, L Dupont, S Lefebvre Microelectronics Reliability 47 (9-11), 1719-1724, 2007 | 111 | 2007 |
| IR Camera Validation of IGBT Junction Temperature Measurement via Peak Gate Current N Baker, L Dupont, S Munk-Nielsen, F Iannuzzo, M Liserre IEEE Transactions on Power Electronics, 2016 | 105 | 2016 |
| Junction temperature measurements via thermo-sensitive electrical parameters and their application to condition monitoring and active thermal control of power converters N Baker, M Liserre, L Dupont, Y Avenas IECON 2013-39th Annual Conference of the IEEE Industrial Electronics Society …, 2013 | 68 | 2013 |
| Preliminary Evaluation of Thermo-Sensitive Electrical Parameters Based on the Forward Voltage for On-line Chip Temperature Measurements of IGBT Devices L Dupont, Y Avenas IEEE Transactions on Industry Applications, 1-24, 2015 | 62 | 2015 |
| Investigations on junction temperature estimation based on junction voltage measurements Z Khatir, L Dupont, A Ibrahim Microelectronics Reliability 50 (9-11), 1506-1510, 2010 | 61 | 2010 |
| Investigation of the heel crack mechanism in Al connections for power electronics modules Y Celnikier, L Benabou, L Dupont, G Coquery Microelectronics reliability 51 (5), 965-974, 2011 | 56 | 2011 |
| Contribution à l'étude de la durée de vie des assemblages de puissance dans des environnements haute température et avec des cycles thermiques de grande amplitude L Dupont École normale supérieure de Cachan-ENS Cachan, 2006 | 49 | 2006 |
| Evaluation of IGBT thermo-sensitive electrical parameters under different dissipation conditions–Comparison with infrared measurements Y Avenas, L Dupont Microelectronics Reliability 52 (11), 2617-2626, 2012 | 48 | 2012 |
| Evaluation of thermo-sensitive electrical parameters based on the forward voltage for on-line chip temperature measurements of IGBT devices L Dupont, Y Avenas 2014 IEEE Energy Conversion Congress and Exposition (ECCE), 4028-4035, 2014 | 46 | 2014 |
| Evaluation of substrate technologies under high temperature cycling L Dupont, S Lefebvre, Z Khatir, S Bontemps 4th International Conference on Integrated Power Systems, 1-6, 2006 | 38 | 2006 |
| Direct Copper Bonding for Power Interconnects: Design, Manufacturing, and Test B Mouawad, B Thollin, C Buttay, L Dupont, V Bley, D Fabregue, ... Components, Packaging and Manufacturing Technology, IEEE Transactions on 5 …, 2014 | 29 | 2014 |
| Ageing test results of low voltage MOSFET modules for electrical vehicles L Dupont, S Lefebvre, M Bouaroudj, Z Khatir, JC Faugieres, F Emorine 2007 European Conference on Power Electronics and Applications, 1-10, 2007 | 29 | 2007 |
| Failure modes on low voltage power MOSFETs under high temperature application L Dupont, S Lefebvre, M Bouaroudj, Z Khatir, JC Faugières Microelectronics reliability 47 (9-11), 1767-1772, 2007 | 28 | 2007 |
| Comparison of stress distributions and failure modes during thermal cycling and power cycling on high power IGBT modules M Bouarroudj, Z Khatir, JP Ousten, L Dupont, S Lefebvre, F Badel 2007 European Conference on Power Electronics and Applications, 1-10, 2007 | 23 | 2007 |
Avenas YvanG2Elab - Université de Grenoble - France在 grenoble-inp.fr 的电子邮件经过验证
