| Lanthanum-substituted bismuth titanate for use of non-volatile memories WJ B. H. Park, B. S. Kang, S. D. Bu, T. W. Noh, J. Lee Nature 400, 682, 1999 | 2696* | 1999 |
| Fatigue and retention in ferroelectric Y‐Ba‐Cu‐O/Pb‐Zr‐Ti‐O/Y‐Ba‐Cu‐O heterostructures R Ramesh, WK Chan, B Wilkens, H Gilchrist, T Sands, JM Tarascon, ... Applied Physics Letters 61 (13), 1537-1539, 1992 | 445 | 1992 |
| Oxygen Vacancy Clustering and Electron Localization in Oxygen-Deficient : <?format ?> Study DD Cuong, B Lee, KM Choi, HS Ahn, S Han, J Lee Physical review letters 98 (11), 115503, 2007 | 346 | 2007 |
| Voltage Offsets in (Pb,La)(Zr,Ti)O3 Thin Films J G. E. Pike, W. L. Warren, D. Dimos, B. A. Tuttle, R. Ramesh, J. Lee, V. G ... Appl. Phys. Lett 66, 484, 1995 | 330* | 1995 |
| All graphene-based thin film transistors on flexible plastic substrates SK Lee, HY Jang, S Jang, E Choi, BH Hong, J Lee, S Park, JH Ahn Nano letters 12 (7), 3472-3476, 2012 | 289 | 2012 |
| Differences in nature of defects between SrBi2Ta2O9 and Bi4Ti3O12 WJ B. H. Park, S. J. Hyun, S. D. Bu, T. W. Noh, J. Lee, H. D. Kim, T. H. Kim Appl. Phys. Lett 74, 1907, 1999 | 270 | 1999 |
| Isostructural metal-insulator transition in VO2 D Lee, B Chung, Y Shi, GY Kim, N Campbell, F Xue, K Song, SY Choi, ... Science 362 (6418), 1037-1040, 2018 | 209 | 2018 |
| Reliable Piezoelectricity in Bilayer WSe2 for Piezoelectric Nanogenerators JH Lee, JY Park, EB Cho, TY Kim, SA Han, TH Kim, Y Liu, SK Kim, ... Advanced Materials 29 (29), 1606667, 2017 | 204 | 2017 |
| Effects of very thin strain layers on dielectric properties of epitaxial films BH Park, EJ Peterson, QX Jia, J Lee, X Zeng, W Si, XX Xi Applied Physics Letters 78 (4), 533-535, 2001 | 202 | 2001 |
| Oriented Ferroelectric La-Sr-Co-O/Pb-La-Zr-Ti-O/La-Sr-Co-O Heterostructures on [001] Pt/SiO2/Si Substrates using a Bismuth Titanate Template Layer TSVGKOA R. Ramesh, J. Lee Appl. Phys. Lett. 64, 2511, 1994 | 201 | 1994 |
| Large nonlinear dielectric properties of artificial superlattices J Kim, Y Kim, YS Kim, J Lee, L Kim, D Jung Applied physics letters 80 (19), 3581-3583, 2002 | 186 | 2002 |
| Density and spatial distribution of charge carriers in the intrinsic -type interface W Son, E Cho, B Lee, J Lee, S Han Physical Review B—Condensed Matter and Materials Physics 79 (24), 245411, 2009 | 183 | 2009 |
| Imprint and oxygen deficiency in (Pb,La)(Zr,Ti)O3 thin‐film capacitors with La‐Sr‐Co‐O electrodes J Lee, R Ramesh, VG Keramidas, WL Warren, GE Pike, JT Evans Jr Applied physics letters 66 (11), 1337-1339, 1995 | 178 | 1995 |
| Deep dry etching of borosilicate glass using SF6 and SF6/Ar inductively coupled plasmas JH Park, NE Lee, J Lee, JS Park, HD Park Microelectronic engineering 82 (2), 119-128, 2005 | 174 | 2005 |
| Characterization of amorphous SiC:H Films Deposited from Hexamethyldisilazane MTKJ Lee Thin Solid Films 303, 173, 1997 | 159 | 1997 |
| Effects of crystalline quality and electrode material on fatigue in Pb (Zr, Ti) O3 thin film capacitors J Lee, L Johnson, A Safari, R Ramesh, T Sands, H Gilchrist, ... Applied physics letters 63 (1), 27-29, 1993 | 151 | 1993 |
| Strain manipulation in artificial lattice toward high dielectric constant and its nonlinearity L Kim, D Jung, J Kim, YS Kim, J Lee Applied physics letters 82 (13), 2118-2120, 2003 | 148 | 2003 |
| Oxygen-vacancy-induced ferromagnetism in from first principles X Han, J Lee, HI Yoo Physical Review B—Condensed Matter and Materials Physics 79 (10), 100403, 2009 | 142 | 2009 |
| First-principles modeling of resistance switching in perovskite oxide material SH Jeon, BH Park, J Lee, B Lee, S Han Applied physics letters 89 (4), 2006 | 141 | 2006 |
| Built-in voltages and asymmetric polarization switching in Pb(Zr,Ti)O3 thin film capacitors TWNJKL J. Lee, C. H. Choi, B. H. Park Appl. Phys. Lett. 72, 3380, 1998 | 133 | 1998 |
