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Carlos M. M. Rosário
标题
引用次数
引用次数
年份
Field‐and irradiation‐induced phenomena in memristive nanomaterials
AN Mikhaylov, EG Gryaznov, AI Belov, DS Korolev, AN Sharapov, ...
physica status solidi (c) 13 (10‐12), 870-881, 2016
1192016
Role of the electrode material on the RESET limitation in oxide ReRAM devices
A Schönhals, CMM Rosário, S Hoffmann‐Eifert, R Waser, S Menzel, ...
Advanced Electronic Materials 4 (2), 1700243, 2018
432018
Multi-level operation in VO2-based resistive switching devices
X Gao, CMM Rosário, H Hilgenkamp
AIP advances 12 (1), 015218, 2022
332022
Metallic filamentary conduction in valence change-based resistive switching devices: the case of TaO x thin film with x∼ 1
CMM Rosário, B Thöner, A Schönhals, S Menzel, A Meledin, NP Barradas, ...
Nanoscale 11 (36), 16978-16990, 2019
312019
Correlation between the transport mechanisms in conductive filaments inside Ta2O5-based resistive switching devices and in substoichiometric TaOx thin films
CMM Rosário, B Thöner, A Schönhals, S Menzel, M Wuttig, R Waser, ...
Applied Physics Letters 112 (21), 213504, 2018
262018
Resistive switching and impedance spectroscopy in SiOx-based metal-oxide-metal trilayers down to helium temperatures
CMM Rosário, ON Gorshkov, AP Kasatkin, IN Antonov, DS Korolev, ...
Vacuum 122, 293-299, 2015
92015
Spatially-Resolved Thermometry of Filamentary Nanoscale Hot Spots in TiO2 Resistive Random Access Memories to Address Device Variability
T Swoboda, X Gao, CMM Rosário, F Hui, K Zhu, Y Yuan, S Deshmukh, ...
ACS Applied Electronic Materials, 2023
72023
Application of the Quantum-Point-Contact Formalism to Model the Filamentary Conduction in -Based Resistive Switching Devices
JMM Andrade, CMM Rosário, S Menzel, R Waser, NA Sobolev
Physical Review Applied 17 (3), 034062, 2022
72022
The effect of intrinsic magnetic order on electrochemical water splitting
E van der Minne, L Korol, L Krakers, M Verhage, CMM Rosário, ...
Applied Physics Reviews 11 (1), 2024
62024
Beyond domain alignment: Revealing the effect of intrinsic magnetic order on electrochemical water splitting
E van der Minne, L Korol, L Krakers, M Verhage, CMM Rosário, ...
arXiv preprint arXiv:2308.16654, 2023
22023
Spectroscopy of radiation defects in rutile TiO2
CMM Rosário, MPF Graça, MA Valente, LC Costa, J Rodrigues, ...
physica status solidi (b) 250 (4), 843-849, 2013
22013
Multibridge VO2‐Based Resistive Switching Devices in a Two‐Terminal Configuration
X Gao, TJ Roskamp, T Swoboda, CMM Rosário, S Smink, M Muñoz Rojo, ...
Advanced Electronic Materials 9 (12), 2300304, 2023
12023
Paramagnetic Nd sublattice and thickness-dependent ferromagnetism in double perovskite thin films
J Spring, G De Luca, S Jöhr, J Herrero-Martín, C Guillemard, ...
Physical Review Materials 7 (10), 104407, 2023
12023
Imaging the suppression of ferromagnetism in by metallic overlayers
B Folkers, T Jansen, TJ Roskamp, P Reith, A Timmermans, D Jannis, ...
Physical Review Materials 8 (5), 054408, 2024
2024
The influence of metallic overlayers on ferromagnetism in LaMnO
B Folkers, T Jansen, TJ Roskamp, P Reith, A Timmermans, D Jannis, ...
arXiv preprint arXiv:2310.05514, 2023
2023
Imaging selective magnetic patterning of Ti/LaMnO3/SrTiO3 heterostructures using scanning SQUID microscopy
TJ Roskamp, B Folkers, T Jansen, N Gauquelin, C Rosário, ...
16th European Conference on Applied Superconductivity, EUCAS 2023, 2023
2023
Phase interference for probing topological fractional charge in a TI-based Josephson junction array
D Wielens, M Lankhorst, T Reintsema, S Reintsema, ...
APS March Meeting Abstracts 2023, S22. 013, 2023
2023
Spatially resolved thermometry of micro-and nano-devices using scanning thermal microscopy
T Swoboda, X Gao, S Deshmukh, Ç Köroğlu, K Zhu, F Hui, N Wainstein, ...
2022
Multi-level operation in vanadium dioxide-based resistive switching devices
X Gao, T Swoboda, C Rosário, M Muñoz Rojo, H Hilgenkamp
2022
Electronic Conduction Processes in VCM-Type Metal-Oxide ReRAM Cells
CMM do Rosário
PQDT-Global, 2020
2020
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