| Metal–semiconductor–metal near-infrared light detector based on epitaxial Ge/Si L Colace, G Masini, F Galluzzi, G Assanto, G Capellini, L Di Gaspare, ... Applied Physics Letters 72 (24), 3175-3177, 1998 | 360 | 1998 |
| SiGe intermixing in Ge/Si (100) islands G Capellini, M De Seta, F Evangelisti Applied Physics Letters 78 (3), 303-305, 2001 | 209 | 2001 |
| Atomic force microscopy lithography as a nanodevice development technique A Notargiacomo, V Foglietti, E Cianci, G Capellini, M Adami, P Faraci, ... Nanotechnology 10 (4), 458, 1999 | 158 | 1999 |
| Nature of the dead layer in CdS and its effect on exciton reflectance spectra F Evangelisti, A Frova, F Patella Physical Review B 10 (10), 4253, 1974 | 117 | 1974 |
| Low-Energy Yield Spectroscopy as a Novel Technique for Determining Band Offsets: Application to the Heterostructure M Sebastiani, L Di Gaspare, G Capellini, C Bittencourt, F Evangelisti Physical review letters 75 (18), 3352, 1995 | 113 | 1995 |
| Atomic force microscopy study of self-organized Ge islands grown on Si (100) by low pressure chemical vapor deposition G Capellini, L Di Gaspare, F Evangelisti, E Palange Applied Physics Letters 70 (4), 493-495, 1997 | 106 | 1997 |
| Dependence of exciton reflectance on field and other surface characteristics: The case of InP F Evangelisti, JU Fischbach, A Frova Physical Review B 9 (4), 1516, 1974 | 98 | 1974 |
| Strain relaxation in high Ge content SiGe layers deposited on Si G Capellini, M De Seta, Y Busby, M Pea, F Evangelisti, G Nicotra, ... Journal of Applied Physics 107 (6), 2010 | 92 | 2010 |
| Extended x-ray absorption fine-structure study of hydrogenated amorphous silicon-germanium alloys L Incoccia, S Mobilio, MG Proietti, P Fiorini, C Giovannella, F Evangelisti Physical Review B 31 (2), 1028, 1985 | 86 | 1985 |
| Structural investigation of a-Si and a-Si:H using x-ray-absorption spectroscopy at the Si K edge A Filipponi, F Evangelisti, M Benfatto, S Mobilio, CR Natoli Physical Review B 40 (14), 9636, 1989 | 81 | 1989 |
| Ordering self-assembled islands without substrate patterning G Capellini, M De Seta, C Spinella, F Evangelisti Applied physics letters 82 (11), 1772-1774, 2003 | 78 | 2003 |
| Photoemission studies of amorphous semiconductor heterojunctions F Evangelisti Journal of Non-Crystalline Solids 77, 969-977, 1985 | 77 | 1985 |
| Electric-Field—Induced Interference Effects at the Ground Exciton Level in GaAs F Evangelisti, A Frova, JU Fischbach Physical Review Letters 29 (15), 1001, 1972 | 77 | 1972 |
| Intermixing-promoted scaling of Ge/Si (100) island sizes M De Seta, G Capellini, F Evangelisti, C Spinella Journal of applied physics 92 (1), 614-619, 2002 | 67 | 2002 |
| Atomic force microscopy and photoluminescence study of Ge layers and self‐organized Ge quantum dots on Si (100) E Palange, G Capellini, L Di Gaspare, F Evangelisti Applied physics letters 68 (21), 2982-2984, 1996 | 67 | 1996 |
| Structure of vapor‐deposited Ge films as a function of substrate temperature F Evangelisti, M Garozzo, G Conte Journal of Applied Physics 53 (11), 7390-7396, 1982 | 63 | 1982 |
| Ge/Si (001) photodetector for near infrared light L Colace, G Masini, F Galluzzi, G Assanto, G Capellini, L Di Gaspare, ... Solid State Phenomena 54, 55-58, 1997 | 62 | 1997 |
| Direct evidence of C 60 chemical bonding on Si (100) M De Seta, D Sanvitto, F Evangelisti Physical Review B 59 (15), 9878, 1999 | 57 | 1999 |
| Exafs investigation of amorphous-to-crystal transition in ge F Evangelisti, MG Proietti, A Balzarotti, F Comin, L Incoccia, S Mobilio Solid State Communications 37 (5), 413-416, 1981 | 54 | 1981 |
| Brillouin scattering efficiencies of exciton polaritons and the additional boundary conditions in CdS YY Peter, F Evangelisti Physical Review Letters 42 (24), 1642, 1979 | 51 | 1979 |
Giovanni CapelliniFull Professor, Università Roma Tre and IHP Leibniz Institute for High Performance Microelectronics在 uniroma3.it 的电子邮件经过验证
