| BSIM6: Analog and RF compact model for bulk MOSFET YS Chauhan, S Venugopalan, MA Chalkiadaki, M Ahosan Ul Karim, ... Electron Devices, IEEE Transactions on 61 (2), 234-244, 2014 | 137 | 2014 |
| BSIM-IMG: A compact model for ultrathin-body SOI MOSFETs with back-gate control S Khandelwal, YS Chauhan, DD Lu, S Venugopalan, M Ahosan Ul Karim, ... Electron Devices, IEEE Transactions on 59 (8), 2019-2026, 2012 | 118 | 2012 |
| BSIM—Industry standard compact MOSFET models YS Chauhan, S Venugopalan, MA Karim, S Khandelwal, N Paydavosi, ... 2012 Proceedings of the European Solid-State Device Research Conference …, 2012 | 84 | 2012 |
| Gravure-printed sol-gels on flexible glass: A scalable route to additively patterned transparent conductors W Scheideler, J Jang, M Ahosan UI Karim, R Kitsomboonloha, ... ACS Applied Materials & Interfaces, 2015 | 58 | 2015 |
| Extraction of isothermal condition and thermal network in UTBB SOI MOSFETs M Ahosan Ul Karim, YS Chauhan, S Venugopalan, AB Sachid, DD Lu, ... Electron Device Letters, IEEE 33 (9), 1306-1308, 2012 | 53* | 2012 |
| High-Performance Inkjet-Printed Four-Terminal Microelectromechanical Relays and Inverters S Chung, M Ahosan Ul Karim, HJ Kwon, V Subramanian Nano letters 15 (5), 3261-3266, 2015 | 31 | 2015 |
| Phenomenological compact model for QM charge centroid in multigate FETs S Venugopalan, M Ahosan Ul Karim, S Salahuddin, AM Niknejad, CC Hu Electron Devices, IEEE Transactions on 60 (4), 1480-1484, 2013 | 28 | 2013 |
| A physically based accurate model for quantum mechanical correction to the surface potential of nanoscale MOSFETs M Ahosan Ul Karim, A Haque Electron Devices, IEEE Transactions on 57 (2), 496-502, 2010 | 23* | 2010 |
| BSIM6: Symmetric bulk MOSFET model YS Chauhan, M Ahosan Ul Karim, S Venugopalan, S Khandelwal, ... Workshop on Compact Modeling, Santa Clara, USA, 2012 | 22 | 2012 |
| Exploitation of the coffee-ring effect to realize mechanically enhanced inkjet-printed microelectromechanical relays with U-bar-shaped cantilevers S Chung, M Ahosan Ul Karim, M Spencer, HJ Kwon, CP Grigoropoulos, ... Applied Physics Letters 105 (26), 261901, 2014 | 20 | 2014 |
| Drain Induced Barrier Lowering (DIBL) Effect on the Intrinsic Capacitances of Nano-Scale MOSFETs M Ahosan Ul Karim, S Venugopalan, YS Chauhan, D Lu, A Niknejad, ... proceeding of NSTI-Nanotech, 814-817, 2011 | 15* | 2011 |
| Fully Inkjet‐Printed Stress‐Tolerant Microelectromechanical Reed Relays for Large‐Area Electronics M Ahosan Ul Karim, S Chung, E Alon, V Subramanian Advanced Electronic Materials 2 (5), 1500482, 2016 | 14 | 2016 |
| An Energy-Efficient and High Throughput in-Memory Computing Bit-Cell With Excellent Robustness Under Process Variations for Binary Neural Network G Saha, Z Jiang, S Parihar, C Xi, J Higman, M Ahosan Ul Karim IEEE Access 8, 91405-91414, 2020 | 13 | 2020 |
| A high-speed inkjet-printed microelectromechanical relay with a mechanically enhanced double-clamped channel-beam S Chung, M Ahosan Ul Karim, HJ Kwon, W Scheideler, V Subramanian Journal of Microelectromechanical Systems 26 (1), 95-101, 2016 | 11 | 2016 |
| Compact models for real device effects in FinFETs S Venugopalan, M Ahosan Ul Karim, AM Niknejad, C Hu, DD Lu The international conference on simulation of semiconductor processes and …, 2012 | 11 | 2012 |
| BSIM6. 0 MOSFET compact model YS Chauhan, MA Karim, S Venugopalan, H Agarwal, P Thakur, ... Technical Manual, May, 2013 | 10 | 2013 |
| Evaluation of the BSIM6 compact MOSFET model's scalability in 40nm CMOS technology MA Chalkiadaki, A Mangla, CC Enz, YS Chauhan, M Ahosan Ul Karim, ... Solid-State Device Research Conference (ESSDERC), 2012 Proceedings of the …, 2012 | 10 | 2012 |
| 10T Differential-Signal SRAM Design in a 14-nm FinFET Technology for High-Speed Application M Ichihashi, Y Woo, M Ahosan Ul Karim, V Joshi, D Burnett 2018 31st IEEE International System-on-Chip Conference (SOCC), 322-325, 2018 | 9 | 2018 |
| Compact models for sub-22 nm MOSFETs YS Chauhan, DD Lu, S Venugopalan, M Ahosan Ul Karim, A Niknejad, ... Proc. Workshop Compact Model, 2011 | 9 | 2011 |
| Modeling intrinsic and extrinsic asymmetry of 3D cylindrical gate/gate-all-around FETs for circuit simulations S Venugopalan, YS Chauhan, DD Lu, M Ahosan Ul Karim, AM Niknejad, ... 11th IEEE Non-Volatile Memory Technology Symposium (NVMTS), 1-4, 2011 | 7 | 2011 |
Ali M NIKNEJADUC Berkeley在 berkeley.edu 的电子邮件经过验证
