| Engineering grain boundaries at the 2D limit for the hydrogen evolution reaction Y He, P Tang, Z Hu, Q He, C Zhu, L Wang, Q Zeng, P Golani, G Gao, W Fu, ... Nature communications 11 (1), 57, 2020 | 186 | 2020 |
| Self-gating in semiconductor electrocatalysis Y He, Q He, L Wang, C Zhu, P Golani, AD Handoko, X Yu, C Gao, M Ding, ... Nature Materials 18 (10), 1098-1104, 2019 | 185 | 2019 |
| Amorphizing noble metal chalcogenide catalysts at the single-layer limit towards hydrogen production Y He, L Liu, C Zhu, S Guo, P Golani, B Koo, P Tang, Z Zhao, M Xu, C Zhu, ... Nature Catalysis 5 (3), 212-221, 2022 | 137 | 2022 |
| Machine learning-guided synthesis of advanced inorganic materials B Tang, Y Lu, J Zhou, T Chouhan, H Wang, P Golani, M Xu, Q Xu, C Guan, ... Materials Today 41, 72-80, 2020 | 99 | 2020 |
| MoTe2 Lateral Homojunction Field-Effect Transistors Fabricated using Flux-Controlled Phase Engineering R Ma, H Zhang, Y Yoo, ZP Degregorio, L Jin, P Golani, ... ACS nano 13 (7), 8035-8046, 2019 | 94 | 2019 |
| Layer dependence of dielectric response and water-enhanced ambient degradation of highly anisotropic black As H Yun, S Ghosh, P Golani, SJ Koester, KA Mkhoyan ACS nano 14 (5), 5988-5997, 2020 | 12 | 2020 |
| Right-angle black phosphorus tunneling field effect transistor MC Robbins, P Golani, SJ Koester IEEE Electron Device Letters 40 (12), 1988-1991, 2019 | 10 | 2019 |
| Ambipolar transport in van der Waals black arsenic field effect transistors P Golani, H Yun, S Ghosh, J Wen, KA Mkhoyan, SJ Koester Nanotechnology 31 (40), 405203, 2020 | 8 | 2020 |
| Optimizing Ohmic contacts to Nd-doped n-type SrSnO3 VR Saran Kumar Chaganti, P Golani, TK Truttmann, F Liu, B Jalan, ... Applied Physics Letters 118 (14), 2021 | 7 | 2021 |
| Growth of black arsenic phosphorus thin films and its application for field-effect transistors N Izquierdo, JC Myers, P Golani, A De Los Santos, NCA Seaton, ... Nanotechnology 32 (32), 325601, 2021 | 4 | 2021 |
| Doping the Undopable: Hybrid Molecular Beam Epitaxy Growth, n-Type Doping, and Field-Effect Transistor Using CaSnO3 F Liu*, P Golani*, TK Truttmann, I Evangelista, MA Smeaton, D Bugallo, ... ACS nano, 2023 | 3 | 2023 |
| Self-heating in ultra-wide bandgap n-type SrSnO3 thin films P Golani, CN Saha, PP Sundaram, F Liu, TK Truttmann, VR Chaganti, ... Applied Physics Letters 121 (16), 2022 | 3 | 2022 |
| Tunable metal contacts at layered black-arsenic/metal interface forming during metal deposition for device fabrication S Kundu, P Golani, H Yun, S Guo, KM Youssef, SJ Koester, KA Mkhoyan Communications Materials 3 (1), 11, 2022 | 1 | 2022 |
| Atomic and Electronic Structure of Black Arsenic and Ambient Stability Studied by Analytical STEM H Yun, S Ghosh, P Golani, SJ Koester, KA Mkhoyan Microscopy and Microanalysis, 1-3, 2020 | 1 | 2020 |
| Understanding 3D anisotropic reactive ion etching of oxide-metal stacks P Golani, RJ Tirukkonda, AN Fancher, SR Ross, MD Kraman, ... Journal of Vacuum Science & Technology B 41 (6), 2023 | | 2023 |
| LOCATION DEPENDENT SENSE TIME OFFSET PARAMETER FOR IMPROVEMENT TO THE THRESHOLD VOLTAGE DISTRIBUTION MARGIN IN NON-VOLATILE MEMORY STRUCTURES XB Pitner, P Golani, R Kumar US Patent 20230197173-A1, 2023 | | 2023 |
| Evaluating the thermal performance of perovskite SrSnO3 field effect transistors B Bista, P Golani, F Liu, T Truttmann, G Pavlidis, A Centrone, B Jalan, ... 2023 22nd IEEE Intersociety Conference on Thermal and Thermomechanical …, 2023 | | 2023 |
| Adsorption-controlled growth and electronic transport properties of La-doped CaSnO3 films F Liu, T Truttmann, P Golani, J Wen, M Smeaton, L Kourkoutis, S Koester, ... APS March Meeting Abstracts 2023, A38. 002, 2023 | | 2023 |
| Exploration of Carrier Transport and Novel Devices in Emerging Semiconductors P Golani | | 2022 |
| Amorphizing noble metal for single-atom-layer catalysis Y He, L Liu, C Zhu, P Golani, B Koo, S Guo, P Tang, Z Zhao, M Xu, P Yu, ... | | 2020 |
Steven J. KoesterProfessor of Electrical & Computer Engineering, University of Minnesota在 umn.edu 的电子邮件经过验证
