| Conductive atomic force microscope study of bipolar and threshold resistive switching in 2D hexagonal boron nitride films A Ranjan, N Raghavan, SJ O’shea, S Mei, M Bosman, K Shubhakar, ... Scientific reports 8 (1), 2854, 2018 | 63 | 2018 |
| Evolution of Filament Formation in Ni/HfO2/SiOx/Si‐Based RRAM Devices X Wu, S Mei, M Bosman, N Raghavan, X Zhang, D Cha, K Li, KL Pey Advanced Electronic Materials 1 (11), 1500130, 2015 | 58 | 2015 |
| Boron vacancies causing breakdown in 2D layered hexagonal boron nitride dielectrics A Ranjan, N Raghavan, FM Puglisi, S Mei, A Padovani, L Larcher, ... IEEE Electron Device Letters 40 (8), 1321-1324, 2019 | 20 | 2019 |
| Compliance current dominates evolution of NiSi2 defect size in Ni/dielectric/Si RRAM devices S Mei, M Bosman, R Nagarajan, X Wu, KL Pey Microelectronics Reliability 61, 71-77, 2016 | 18 | 2016 |
| New understanding of dielectric breakdown in advanced FinFET devices—physical, electrical, statistical and multiphysics study S Mei, N Raghavan, M Bosman, D Linten, G Groeseneken, N Horiguchi, ... 2016 IEEE International Electron Devices Meeting (IEDM), 15.5. 1-15.5. 4, 2016 | 16 | 2016 |
| Conductive filament formation at grain boundary locations in polycrystalline HfO2-based MIM stacks: Computational and physical insight K Shubhakar, S Mei, M Bosman, N Raghavan, A Ranjan, SJ O'Shea, ... Microelectronics Reliability 64, 204-209, 2016 | 14 | 2016 |
| Mechanism of soft and hard breakdown in hexagonal boron nitride 2D dielectrics A Ranjan, N Raghavan, SJ O'Shea, S Mei, M Bosman, K Shubhakar, ... 2018 IEEE International Reliability Physics Symposium (IRPS), 4A. 1-1-4A. 1-6, 2018 | 12 | 2018 |
| Stochastic modeling of FinFET degradation based on a resistor network embedded metropolis Monte Carlo method S Mei, N Raghavan, M Bosman, KL Pey IEEE Transactions on Electron Devices 65 (2), 440-447, 2018 | 11 | 2018 |
| Area and pulsewidth dependence of bipolar TDDB in MgO magnetic tunnel junction JH Lim, N Raghavan, S Mei, VB Naik, JH Kwon, SM Noh, B Liu, EH Toh, ... 2018 IEEE International Reliability Physics Symposium (IRPS), 6D. 6-1-6D. 6-6, 2018 | 10 | 2018 |
| Dynamic investigation of interface atom migration during heterostructure nanojoining S Mei, L He, X Wu, J Sun, B Wang, X Xiong, L Sun Nanoscale 6 (1), 405-411, 2014 | 10 | 2014 |
| Understanding the switching mechanism in RRAM using in-situ TEM KL Pey, R Thamankar, M Sen, M Bosman, N Raghavan, K Shubhakar 2016 IEEE Silicon Nanoelectronics Workshop (SNW), 36-37, 2016 | 9 | 2016 |
| New insights into dielectric breakdown of MgO in STT-MRAM devices KL Pey, JH Lim, N Raghavan, S Mei, JH Kwon, VB Naik, K Yamane, ... 2019 Electron Devices Technology and Manufacturing Conference (EDTM), 264-266, 2019 | 7 | 2019 |
| Asymmetric dielectric breakdown behavior in MgO based magnetic tunnel junctions JH Lim, N Raghavan, S Mei, KH Lee, SM Noh, JH Kwon, E Quek, KL Pey Microelectronic Engineering 178, 308-312, 2017 | 7 | 2017 |
| 3D characterization of hard breakdown in RRAM device S Mei, M Bosman, K Shubhakar, N Raghavan, L Ming, KL Pey Microelectronic Engineering 216, 111042, 2019 | 6 | 2019 |
| Impact of Carbon Doping on Polysilicon Grain Size Distribution and Yield Enhancement for 40-nm Embedded Nonvolatile Memory Technology L Luo, K Shubhakar, S Mei, N Raghavan, B Liu, JY Huang, Y Liu, ... IEEE Transactions on Device and Materials Reliability 18 (1), 64-69, 2018 | 4 | 2018 |
| Multiphysics based 3D percolation framework model for multi-stage degradation and breakdown in high-κ—Interfacial layer stacks S Mei, N Raghavan, K Shubhakar, M Bosman, KL Pey 2016 IEEE International Reliability Physics Symposium (IRPS), 7A-2-1-7A-2-6, 2016 | 4 | 2016 |
| Statistical basis and physical evidence for clustering model in FinFET degradation S Mei, N Raghavan, M Bosman, KL Pey 2017 IEEE International Reliability Physics Symposium (IRPS), 3C-1.1-3C-1.6, 2017 | 3 | 2017 |
| Statistical nature of hard breakdown recovery in high-κ dielectric stacks studied using ramped voltage stress X Feng, N Raghavan, S Mei, S Dong, KL Pey, H Wong Microelectronics Reliability 88, 164-168, 2018 | 2 | 2018 |
| Control gate dummy for word line uniformity and method for producing the same Laiqiang LUO, Sen MEI, Fangxin DENG, Zhiqiang Teo, Fan Zheng, Pinghui Li ... US Patent 10,381,360, 2019 | 1 | 2019 |
| Role of metal nanocrystals on the breakdown statistics of flash memory high-κ stacks X Feng, N Raghavan, S Mei, L Du, KL Pey, H Wong Microelectronic Engineering 178, 293-297, 2017 | 1 | 2017 |
Nagarajan RaghavanAssociate Professor, Singapore University of Technology & Design (SUTD)在 sutd.edu.sg 的电子邮件经过验证
