| -Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz Z Xia, H Xue, C Joishi, J Mcglone, NK Kalarickal, SH Sohel, M Brenner, ... IEEE Electron Device Letters 40 (7), 1052-1055, 2019 | 158 | 2019 |
| High Al-content AlGaN transistor with 0.5 A/mm current density and lateral breakdown field exceeding 3.6 MV/cm S Bajaj, A Allerman, A Armstrong, T Razzak, V Talesara, W Sun, SH Sohel, ... IEEE Electron Device Letters 39 (2), 256-259, 2017 | 65 | 2017 |
| Linearity Improvement With AlGaN Polarization- Graded Field Effect Transistors With Low Pressure Chemical Vapor Deposition Grown SiNx Passivation SH Sohel, MW Rahman, A Xie, E Beam, Y Cui, M Kruzich, H Xue, ... IEEE Electron Device Letters 41 (1), 19-22, 2019 | 49 | 2019 |
| X-band power and linearity performance of compositionally graded AlGaN channel transistors SH Sohel, A Xie, E Beam, H Xue, JA Roussos, T Razzak, S Bajaj, Y Cao, ... IEEE Electron Device Letters 39 (12), 1884-1887, 2018 | 39 | 2018 |
| Al0. 75Ga0. 25N/Al0. 6Ga0. 4N heterojunction field effect transistor with fT of 40 GHz H Xue, CH Lee, K Hussian, T Razzak, M Abdullah, Z Xia, SH Sohel, ... Applied Physics Express 12 (6), 066502, 2019 | 37 | 2019 |
| Polarization engineering of AlGaN/GaN HEMT with graded InGaN sub-channel for high-linearity X-band applications SH Sohel, A Xie, E Beam, H Xue, T Razzak, S Bajaj, Y Cao, C Lee, W Lu, ... IEEE Electron Device Letters 40 (4), 522-525, 2019 | 36 | 2019 |
| Deep-Recessed β-Ga₂O₃ Delta-Doped Field-Effect Transistors With In Situ Epitaxial Passivation C Joishi, Z Xia, JS Jamison, SH Sohel, RC Myers, S Lodha, S Rajan IEEE Transactions on Electron Devices 67 (11), 4813-4819, 2020 | 35 | 2020 |
| BaTiO3/Al0. 58Ga0. 42N lateral heterojunction diodes with breakdown field exceeding 8 MV/cm T Razzak, H Chandrasekar, K Hussain, CH Lee, A Mamun, H Xue, Z Xia, ... Applied Physics Letters 116 (2), 2020 | 29 | 2020 |
| Al0.65Ga0.35N/Al0.4Ga0.6N Micro-Channel Heterojunction Field Effect Transistors With Current Density Over 900 mA/mm H Xue, K Hussain, T Razzak, M Gaevski, SH Sohel, S Mollah, V Talesara, ... IEEE Electron Device Letters 41 (5), 677-680, 2020 | 25 | 2020 |
| All MOCVD grown Al0. 7Ga0. 3N/Al0. 5Ga0. 5N HFET: An approach to make ohmic contacts to Al-rich AlGaN channel transistors H Xue, S Hwang, T Razzak, C Lee, GC Ortiz, Z Xia, SH Sohel, J Hwang, ... Solid-State Electronics 164, 107696, 2020 | 25 | 2020 |
| Design of compositionally graded contact layers for MOCVD grown high Al-content AlGaN transistors T Razzak, S Hwang, A Coleman, H Xue, SH Sohel, S Bajaj, Y Zhang, ... Applied Physics Letters 115 (4), 2019 | 25 | 2019 |
| Breakdown Voltage Enhancement in ScAlN/GaN High-Electron-Mobility Transistors by High-k Bismuth Zinc Niobate Oxide J Cheng, MW Rahman, A Xie, H Xue, SH Sohel, E Beam, C Lee, H Yang, ... IEEE Transactions on Electron Devices 68 (7), 3333-3338, 2021 | 21 | 2021 |
| RF Operation in Graded AlxGa1-xN (x=0.65 to 0.82) Channel Transistors T Razzak, S Hwang, A Coleman, SS Bajaj, H Xue, Y Zhang, ... Electronics letters, 2018 | 20 | 2018 |
| Improved DC-RF dispersion with epitaxial passivation for high linearity graded AlGaN channel field effect transistors SH Sohel, A Xie, E Beam, H Xue, T Razzak, S Bajaj, S Campbell, D White, ... Applied Physics Express 13 (3), 036502, 2020 | 12 | 2020 |
| Al0.7Ga0.3N MESFET With All-Refractory Metal Process for High Temperature Operation AM Potts, S Bajaj, DR Daughton, AA Allerman, AM Armstrong, T Razzak, ... IEEE Transactions on Electron Devices 68 (9), 4278-4282, 2021 | 8 | 2021 |
| Epitaxial passivation of delta doped -Ga2O3 field effect transistors C Joishi, Z Xia, SH Sohel, S Lodha, S Rajan 2019 Device Research Conference (DRC), 223-224, 2019 | 5 | 2019 |
| Small signal analysis of ultra-wide bandgap Al0. 7Ga0. 3N channel MESFETs H Xue, T Razzak, S Hwang, A Coleman, SH Sohel, S Rajan, A Khan, ... Microelectronic Engineering 237, 111495, 2021 | 4 | 2021 |
| Small-signal characteristics of graded AlGaN channel PolFETs S Bajaj, Z Yang, F Akyol, PS Park, Y Zhang, SH Sohel, S Krishnamoorthy, ... 2017 75th Annual Device Research Conference (DRC), 1-2, 2017 | 3 | 2017 |
| All MOCVD grown 250 nm gate length Al0.70Ga0.30N MESFETs H Xue, T Razzak, S Hwang, A Coleman, S Bajaj, Y Zhang, Z Jamal-Eddin, ... 2018 76th Device Research Conference (DRC), 1-2, 2018 | 2 | 2018 |
| Design of graded AlGaN channel transistors for improved large-signal linearity SH Sohel, S Bajaj, T Razzak, DJ Meyer, S Rajan Proc. Int. Conf. Compound Semiconductor Manuf. Technol., 1-4, 2018 | 2 | 2018 |
Siddharth RajanElectrical and Computer Engineering, Ohio State University在 ece.osu.edu 的电子邮件经过验证
