| Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC (0001) F Fromm, MH Oliveira Jr, A Molina-Sánchez, M Hundhausen, JMJ Lopes, ... New Journal of Physics 15 (4), 043031, 2013 | 159 | 2013 |
| Formation of high-quality quasi-free-standing bilayer graphene on SiC (0 0 0 1) by oxygen intercalation upon annealing in air MH Oliveira Jr, T Schumann, F Fromm, R Koch, M Ostler, M Ramsteiner, ... Carbon 52, 83-89, 2013 | 147 | 2013 |
| Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy S Nakhaie, JM Wofford, T Schumann, U Jahn, M Ramsteiner, M Hanke, ... Applied Physics Letters 106 (21), 2015 | 113 | 2015 |
| Amorphous lanthanum lutetium oxide thin films as an alternative high-κ gate dielectric JMJ Lopes, M Roeckerath, T Heeg, E Rije, J Schubert, S Mantl, ... Applied physics letters 89 (22), 2006 | 108 | 2006 |
| Molecular beam epitaxy of GaN nanowires on epitaxial graphene S Fernández-Garrido, M Ramsteiner, G Gao, LA Galves, B Sharma, ... Nano letters 17 (9), 5213-5221, 2017 | 82 | 2017 |
| Influence of the silicon carbide surface morphology on the epitaxial graphene formation MH Oliveira, T Schumann, M Ramsteiner, JMJ Lopes, H Riechert Applied Physics Letters 99 (11), 2011 | 79 | 2011 |
| Amorphous ternary rare-earth gate oxides for future integration in MOSFETs JMJ Lopes, ED Özben, M Roeckerath, U Littmark, R Lupták, M Luysberg, ... Microelectronic engineering 86 (7-9), 1646-1649, 2009 | 71 | 2009 |
| Mono-and few-layer nanocrystalline graphene grown on Al2O3 (0 0 0 1) by molecular beam epitaxy MH Oliveira Jr, T Schumann, R Gargallo-Caballero, F Fromm, T Seyller, ... Carbon 56, 339-350, 2013 | 68 | 2013 |
| A hybrid MBE-based growth method for large-area synthesis of stacked hexagonal boron nitride/graphene heterostructures JM Wofford, S Nakhaie, T Krause, X Liu, M Ramsteiner, M Hanke, ... Scientific reports 7 (1), 43644, 2017 | 66 | 2017 |
| Anisotropic quantum Hall effect in epitaxial graphene on stepped SiC surfaces T Schumann, KJ Friedland, MH Oliveira Jr, A Tahraoui, JMJ Lopes, ... Physical Review B—Condensed Matter and Materials Physics 85 (23), 235402, 2012 | 60 | 2012 |
| Synthesis of quasi-free-standing bilayer graphene nanoribbons on SiC surfaces MH Oliveira, Jr, JMJ Lopes, T Schumann, LA Galves, M Ramsteiner, ... Nature communications 6 (1), 7632, 2015 | 58 | 2015 |
| Acousto-electric transport in epitaxial monolayer graphene on SiC PV Santos, T Schumann, MH Oliveira, JMJ Lopes, H Riechert Applied physics letters 102 (22), 2013 | 57 | 2013 |
| Electronic structure of silicon interfaces with amorphous and epitaxial insulating oxides: Sc2O3, Lu2O3, LaLuO3 VV Afanas’ev, S Shamuilia, M Badylevich, A Stesmans, LF Edge, W Tian, ... Microelectronic engineering 84 (9-10), 2278-2281, 2007 | 56 | 2007 |
| Effect of buffer layer coupling on the lattice parameter of epitaxial graphene on SiC (0001) T Schumann, M Dubslaff, MH Oliveira Jr, M Hanke, JMJ Lopes, H Riechert Physical Review B 90 (4), 041403, 2014 | 55 | 2014 |
| Cluster coarsening and luminescence emission intensity of Ge nanoclusters in layers JMJ Lopes, FC Zawislak, M Behar, PFP Fichtner, L Rebohle, W Skorupa Journal of applied physics 94 (9), 6059-6064, 2003 | 48 | 2003 |
| Coincident-site lattice matching during van der Waals epitaxy JE Boschker, LA Galves, T Flissikowski, JMJ Lopes, H Riechert, ... Scientific Reports 5 (1), 18079, 2015 | 45 | 2015 |
| La-based ternary rare-earth oxides as alternative high-κ dielectrics JMJ Lopes, M Roeckerath, T Heeg, U Littmark, J Schubert, S Mantl, Y Jia, ... Microelectronic engineering 84 (9-10), 1890-1893, 2007 | 44 | 2007 |
| Recent advances in 2D material theory, synthesis, properties, and applications YC Lin, R Torsi, R Younas, CL Hinkle, AF Rigosi, HM Hill, K Zhang, ... ACS nano 17 (11), 9694-9747, 2023 | 42 | 2023 |
| Effects of annealing on the electrical and interfacial properties of amorphous lanthanum scandate high-κ films prepared by molecular beam deposition JMJ Lopes, U Littmark, M Roeckerath, S Lenk, J Schubert, S Mantl, ... Journal of applied physics 101 (10), 2007 | 40 | 2007 |
| Integration of as High- Dielectric on Strained and Unstrained SOI MOSFETs With a Replacement Gate Process ED Özben, JMJ Lopes, A Nichau, M Schnee, S Lenk, A Besmehn, ... IEEE electron device letters 32 (1), 15-17, 2010 | 39 | 2010 |
