| Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride F Roccaforte, F Giannazzo, A Alberti, M Spera, M Cannas, I Cora, B Pécz, ... Materials Science in Semiconductor Processing 94, 164-170, 2019 | 35 | 2019 |
| Effect of high temperature annealing (T> 1650 C) on the morphological and electrical properties of p-type implanted 4H-SiC layers M Spera, D Corso, S Di Franco, G Greco, A Severino, P Fiorenza, ... Materials Science in Semiconductor Processing 93, 274-279, 2019 | 29 | 2019 |
| Modification of the sheet resistance under Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructures M Spera, C Miccoli, RL Nigro, C Bongiorno, D Corso, S Di Franco, ... Materials Science in Semiconductor Processing 78, 111-117, 2018 | 19 | 2018 |
| Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon M Spera, G Greco, RL Nigro, C Bongiorno, F Giannazzo, M Zielinski, ... Materials Science in Semiconductor Processing 93, 295-298, 2019 | 16 | 2019 |
| Forward and reverse current transport mechanisms in tungsten carbide Schottky contacts on AlGaN/GaN heterostructures G Greco, P Fiorenza, M Spera, F Giannazzo, F Roccaforte Journal of Applied Physics 129 (23), 2021 | 15 | 2021 |
| Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC M Vivona, G Greco, M Spera, P Fiorenza, F Giannazzo, A La Magna, ... Journal of Physics D: Applied Physics 54 (44), 445107, 2021 | 14 | 2021 |
| Metal/semiconductor barrier properties of non-recessed Ti/Al/Ti and Ta/Al/Ta Ohmic contacts on AlGaN/GaN heterostructures M Spera, G Greco, R Lo Nigro, S Scalese, C Bongiorno, M Cannas, ... Energies 12 (14), 2655, 2019 | 14 | 2019 |
| Ohmic contacts on p-Type Al-Implanted 4H-SiC layers after different post-implantation annealings M Spera, G Greco, D Corso, S Di Franco, A Severino, AA Messina, ... Materials 12 (21), 3468, 2019 | 13 | 2019 |
| Active dopant profiling and Ohmic contacts behavior in degenerate n-type implanted silicon carbide M Spera, G Greco, A Severino, M Vivona, P Fiorenza, F Giannazzo, ... Applied Physics Letters 117 (1), 2020 | 8 | 2020 |
| Environment assisted photoconversion of luminescent surface defects in SiO2 nanoparticles L Spallino, M Spera, L Vaccaro, S Agnello, FM Gelardi, AF Zatsepin, ... Applied Surface Science 420, 94-99, 2017 | 7 | 2017 |
| Fabrication and characterization of ohmic contacts to 3C-SiC layers grown on silicon M Spera, G Greco, R Lo Nigro, S Di Franco, D Corso, P Fiorenza, ... Materials Science Forum 963, 485-489, 2019 | 4 | 2019 |
| Improvement of Ti/Al/Ti Ohmic contacts on AlGaN/GaN heterostructures by insertion of a thin carbon interfacial layer G Greco, S Di Franco, R Lo Nigro, C Bongiorno, M Spera, P Badalà, ... Applied Physics Letters 124 (1), 2024 | 1 | 2024 |
| Manufacturing process of an ohmic contact of a hemt device and hemt device F Iucolano, G Greco, F Roccaforte, M SPERA US Patent App. 18/156,976, 2023 | | 2023 |
| Current Transport Mechanisms in Au-Free Metallizations for CMOS Compatible GaN HEMT Technology F Roccaforte, M Spera, S Di Franco, R Lo Nigro, P Fiorenza, F Giannazzo, ... Materials Science Forum 1004, 725-730, 2020 | | 2020 |
| Contatti ohmici su semiconduttori ad ampia band gap M Spera Università degli studi di Catania, 2020 | | 2020 |
