High-mobility BaSnO3 grown by oxide molecular beam epitaxy S Raghavan, T Schumann, H Kim, JY Zhang, TA Cain, S Stemmer APL Materials 4 (1), 016106, 2016 | 247 | 2016 |
Electrochemically tunable thermal conductivity of lithium cobalt oxide J Cho, MD Losego, HG Zhang, H Kim, J Zuo, I Petrov, DG Cahill, ... Nature communications 5 (1), 1-6, 2014 | 191 | 2014 |
Observation of the Quantum Hall Effect in Confined Films of the Three-Dimensional Dirac Semimetal T Schumann, L Galletti, DA Kealhofer, H Kim, M Goyal, S Stemmer Physical Review Letters 120 (1), 016801, 2018 | 171 | 2018 |
Lattice and strain analysis of atomic resolution Z-contrast images based on template matching JM Zuo, AB Shah, H Kim, Y Meng, W Gao, JL Rouviére Ultramicroscopy 136, 50-60, 2014 | 98 | 2014 |
Molecular beam epitaxy of Cd3As2 on a III-V substrate T Schumann, M Goyal, H Kim, S Stemmer APL Materials 4 (12), 126110, 2016 | 82 | 2016 |
Demonstration of 4.7 kV breakdown voltage in NiO/β-Ga2O3 vertical rectifiers JS Li, CC Chiang, X Xia, TJ Yoo, F Ren, H Kim, SJ Pearton Applied Physics Letters 121 (4), 042105, 2022 | 81 | 2022 |
Structure and optical band gaps of (Ba,Sr)SnO3 films grown by molecular beam epitaxy T Schumann, S Raghavan, K Ahadi, H Kim, S Stemmer Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 34 (5 …, 2016 | 66 | 2016 |
Direct Observation of Sr Vacancies in by Quantitative Scanning Transmission Electron Microscopy H Kim, JY Zhang, S Raghavan, S Stemmer Physical Review X 6 (4), 041063, 2016 | 61 | 2016 |
Atomic resolution mapping of interfacial intermixing and segregation in InAs/GaSb superlattices: A correlative study H Kim, Y Meng, JL Rouviére, D Isheim, DN Seidman, JM Zuo Journal of Applied Physics 113 (10), 103511, 2013 | 60 | 2013 |
Two-dimensional Dirac fermions in thin films of L Galletti, T Schumann, OF Shoron, M Goyal, DA Kealhofer, H Kim, ... Physical Review B 97 (11), 115132, 2018 | 50 | 2018 |
Key role of lattice symmetry in the metal-insulator transition of NdNiO3 films JY Zhang, H Kim, E Mikheev, AJ Hauser, S Stemmer Scientific reports 6, 23652, 2016 | 44 | 2016 |
Al2O3 buffer in a ZnO thin film transistor with poly-4-vinylphenol dielectric S Bang, S Lee, S Jeon, S Kwon, W Jeong, H Kim, I Shin, HJ Chang, ... Semiconductor Science and Technology 24 (2), 025008, 2008 | 42 | 2008 |
Annealing Temperature Dependence of Band Alignment of NiO/β-Ga2O3 X Xia, JS Li, CC Chiang, TJ Yoo, F Ren, H Kim, SJ Pearton Journal of Physics D: Applied Physics, 2022 | 41 | 2022 |
Spontaneous Hall effects in the electron system at the SmTiO3/EuTiO3 interface K Ahadi, H Kim, S Stemmer APL Materials 6 (5), 056102, 2018 | 32 | 2018 |
Surface states of strained thin films of the Dirac semimetal M Goyal, H Kim, T Schumann, L Galletti, AA Burkov, S Stemmer Physical Review Materials 3 (6), 064204, 2019 | 28 | 2019 |
Basal-plane growth of cadmium arsenide by molecular beam epitaxy DA Kealhofer, H Kim, T Schumann, M Goyal, L Galletti, S Stemmer Physical Review Materials 3 (3), 031201, 2019 | 26 | 2019 |
Reproducible NiO/Ga2O3 Vertical Rectifiers with Breakdown Voltage > 8 kV JS Li, HH Wan, CC Chiang, X Xia, TJ Yoo, H Kim, F Ren, SJ Pearton Crystals 13 (6), 886, 2023 | 25 | 2023 |
Pt nanocrystals embedded in remote plasma atomic-layer-deposited HfO2 for nonvolatile memory devices H Kim, S Woo, H Kim, S Bang, Y Kim, D Choi, H Jeon Electrochemical and Solid State Letters 12 (4), H92, 2009 | 25 | 2009 |
Growth of strontium ruthenate films by hybrid molecular beam epitaxy PB Marshall, H Kim, K Ahadi, S Stemmer APL Materials 5 (9), 096101, 2017 | 24 | 2017 |
Atomic-scale characterization of structural damage and recovery in Sn ion-implanted β-Ga2O3 T Yoo, X Xia, F Ren, A Jacobs, MJ Tadjer, S Pearton, H Kim Applied Physics Letters 121 (7), 072111, 2022 | 21 | 2022 |