| Improved two-dimensional electron gas transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor with atomic layer-deposited Al2O3 … ZH Liu, GI Ng, S Arulkumaran, YKT Maung, KL Teo, SC Foo, ... Applied Physics Letters 95 (22), 2009 | 133 | 2009 |
| AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si (111) S Tripathy, VKX Lin, SB Dolmanan, JPY Tan, RS Kajen, LK Bera, SL Teo, ... Applied Physics Letters 101 (8), 2012 | 124 | 2012 |
| High Microwave-Noise Performance of AlGaN/GaN MISHEMTs on Silicon With Gate Insulator Grown by ALD ZH Liu, GI Ng, S Arulkumaran, YKT Maung, KL Teo, SC Foo, ... IEEE electron device letters 31 (2), 96-98, 2009 | 85 | 2009 |
| Direct current and microwave characteristics of sub-micron AlGaN/GaN high-electron-mobility transistors on 8-inch Si (111) substrate S Arulkumaran, GI Ng, S Vicknesh, H Wang, KS Ang, JPY Tan, VK Lin, ... Japanese Journal of Applied Physics 51 (11R), 111001, 2012 | 82 | 2012 |
| Optical microcavities on Si formed by self-assembled InGaAs/GaAs quantum dot microtubes S Vicknesh, F Li, Z Mi Applied Physics Letters 94 (8), 2009 | 77 | 2009 |
| Coherent emission from ultrathin-walled spiral InGaAs/GaAs quantum dot microtubes F Li, Z Mi, S Vicknesh Optics letters 34 (19), 2915-2917, 2009 | 76 | 2009 |
| Improved Power Device Figure-of-Merit (4.0× 108 V2 Ω-1 cm-2) in AlGaN/GaN High-Electron-Mobility Transistors on High-Resistivity 4-in. Si S Arulkumaran, S Vicknesh, NG Ing, SL Selvaraj, T Egawa Applied physics express 4 (8), 084101, 2011 | 75 | 2011 |
| Improved Linearity for Low-Noise Applications in 0.25- GaN MISHEMTs Using ALD as Gate Dielectric ZH Liu, GI Ng, S Arulkumaran, YKT Maung, KL Teo, SC Foo, ... IEEE Electron Device Letters 31 (8), 803-805, 2010 | 75 | 2010 |
| Demonstration of submicron-gate AlGaN/GaN high-electron-mobility transistors on silicon with complementary metal–oxide–semiconductor-compatible non-gold metal stack S Arulkumaran, GI Ng, S Vicknesh, H Wang, KS Ang, CM Kumar, KL Teo, ... Applied Physics Express 6 (1), 016501, 2012 | 71 | 2012 |
| Enhanced Breakdown Voltage With High Johnson's Figure-of-Merit in 0.3-T-gate AlGaN/GaN HEMTs on Silicon byTreatment S Arulkumaran, GI Ng, S Vicknesh IEEE electron device letters 34 (11), 1364-1366, 2013 | 67 | 2013 |
| Luminescence properties of ZnO layers grown on Si-on-insulator substrates B Kumar, H Gong, S Vicknesh, SJ Chua, S Tripathy Applied physics letters 89 (14), 2006 | 52 | 2006 |
| High Johnson’s figure of merit (8.32 THz· V) in 0.15-µm conventional T-gate AlGaN/GaN HEMTs on silicon K Ranjan, S Arulkumaran, GI Ng, S Vicknesh Applied Physics Express 7 (4), 044102, 2014 | 40 | 2014 |
| High-frequency microwave noise characteristics of InAlN/GaN high-electron mobility transistors on Si (111) substrate S Arulkumaran, K Ranjan, GI Ng, CMM Kumar, S Vicknesh, SB Dolmanan, ... IEEE Electron Device Letters 35 (10), 992-994, 2014 | 38 | 2014 |
| Reduction of current collapse in AlGaN/GaN MISHEMT with bilayer SiN/Al2O3 dielectric gate stack MJ Anand, GI Ng, S Vicknesh, S Arulkumaran, K Ranjan physica status solidi (c) 10 (11), 1421-1425, 2013 | 33 | 2013 |
| Improved recess‐ohmics in AlGaN/GaN high‐electron‐mobility transistors with AlN spacer layer on silicon substrate S Arulkumaran, NG Ing, V Sahmuganathan, L Zhihong, B Maung physica status solidi c 7 (10), 2412-2414, 2010 | 32 | 2010 |
| Low specific on-resistance AlGaN/AlN/GaN high electron mobility transistors on high resistivity silicon substrate S Arulkumaran, S Vicknesh, GI Ng, ZH Liu, M Bryan, CH Lee Electrochemical and Solid-State Letters 13 (5), H169, 2010 | 31 | 2010 |
| Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111) MJ Anand, GI Ng, S Arulkumaran, M Kumar, K Ranjan, S Vicknesh, ... Applied Physics Letters 106 (8), 2015 | 28 | 2015 |
| Fabrication of deeply undercut GaN-based microdisk structures on silicon platforms S Vicknesh, S Tripathy, VKX Lin, LS Wang, SJ Chua Applied physics letters 90 (7), 2007 | 27 | 2007 |
| Etching characteristics of HBr-based chemistry on InP using the ICP technique S Vicknesh, A Ramam Journal of the Electrochemical Society 151 (12), C772, 2004 | 25 | 2004 |
| Micro-Raman probing of residual stress in freestanding GaN-based micromechanical structures fabricated by a dry release technique S Tripathy, VKX Lin, S Vicknesh, SJ Chua Journal of applied physics 101 (6), 2007 | 24 | 2007 |
Subramaniam ArulkumaranTemasek Laboratories@NTU, Nanyang Technological University在 ntu.edu.sg 的电子邮件经过验证
