受强制性开放获取政策约束的文章 - Vicknesh Sahmuganathan了解详情
无法在其他位置公开访问的文章：2 篇
Record-low contact resistance for InAlN/AlN/GaN high electron mobility transistors on Si with non-gold metal
S Arulkumaran, GI Ng, K Ranjan, CMM Kumar, SC Foo, KS Ang, ...
Japanese Journal of Applied Physics 54 (4S), 04DF12, 2015
强制性开放获取政策： A*Star, Singapore
Poly-adamantane as precursor for low temperature chemical vapor deposition of nanocrystalline diamond films
J Gu, J Lyu, Z Chen, H Xu, V Sahmuganathan, SC Tan, J Sudijono, ...
Diamond and Related Materials 130, 109471, 2022
强制性开放获取政策： A*Star, Singapore
可在其他位置公开访问的文章：4 篇
High-frequency microwave noise characteristics of InAlN/GaN high-electron mobility transistors on Si (111) substrate
S Arulkumaran, K Ranjan, GI Ng, CMM Kumar, S Vicknesh, SB Dolmanan, ...
IEEE Electron Device Letters 35 (10), 992-994, 2014
强制性开放获取政策： A*Star, Singapore
Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111)
MJ Anand, GI Ng, S Arulkumaran, M Kumar, K Ranjan, S Vicknesh, ...
Applied Physics Letters 106 (8), 2015
强制性开放获取政策： A*Star, Singapore
Structural colors based on diamond metasurface for information encryption
J Gu, Y Liu, N Meng, V Sahmuganathan, SC Tan, J Sudijono, J Tang, ...
Advanced Optical Materials 11 (6), 2202826, 2023
强制性开放获取政策： A*Star, Singapore
Record low contact resistance for InAlN/GaN HEMTs on Si with non-gold metal
S Arulkumaran, GI Ng, K Ranjan, CMM Kumar, SC Foo, KS Ang, ...
强制性开放获取政策： A*Star, Singapore
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