| A propagation concept of negative bias temperature instability along the channel length in p-type metal oxide field effect transistor B Djezzar, H Tahi, A Benabdelmoumene, A Chenouf Solid-state electronics 82, 46-53, 2013 | 31 | 2013 |
| Recovery investigation of NBTI-induced traps in n-MOSFET devices B Djezzar, A Benabdelmoumene, B Zatout, D Messaoud, A Chenouf, ... Microelectronics Reliability 110, 113703, 2020 | 21 | 2020 |
| Investigation of interface, shallow and deep oxide traps under NBTI stress using charge pumping technique H Tahi, B Djezzar, A Benabdelmoumene, A Chenouf, M Goudjil Microelectronics Reliability 54 (5), 882-888, 2014 | 21 | 2014 |
| Analysis of NBTI Degradation in nMOS-Capacitors and nMOSFETs A Benabdelmoumene, B Djezzar, A Chenouf, B Zatout, M Kechouane IEEE Transactions on Device and Materials Reliability 18 (4), 583-591, 2018 | 15 | 2018 |
| On the permanent component profiling of the negative bias temperature instability in p-MOSFET devices B Djezzar, H Tahi, A Benabdelmoumene, A Chenouf, M Goudjil, Y Kribes Solid-State Electronics 106, 54-62, 2015 | 15 | 2015 |
| A new method for negative bias temperature instability assessment in P-channel metal oxide semiconductor transistors B Djezzar, H Tahi, A Benabdelmoumene, A Chenouf, Y Kribes Japanese Journal of Applied Physics 51 (11R), 116602, 2012 | 15 | 2012 |
| On the turn-around phenomenon in n-MOS transistors under NBTI conditions A Benabdelmoumene, B Djezzar, A Chenouf, H Tahi, B Zatout, ... Solid-State Electronics 121, 34-40, 2016 | 14 | 2016 |
| Sizing of the CMOS 6T‐SRAM cell for NBTI ageing mitigation A Chenouf, B Djezzar, H Bentarzi, A Benabdelmoumene IET Circuits, Devices & Systems 14 (4), 555-561, 2020 | 11 | 2020 |
| Does NBTI effect in MOS transistors depend on channel length? A Benabdelmoumene, B Djezzar, H Tahi, A Chenouf, M Goudjil, ... 2014 26th International Conference on Microelectronics (ICM), 52-55, 2014 | 10 | 2014 |
| Investigation of NBTI degradation on power VDMOS transistors under magnetic field H Tahi, K Benmessai, JM Le Floch, M Boubaaya, C Tahanout, B Djezzar, ... 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW …, 2014 | 8 | 2014 |
| Deep experimental investigation of NBTI impact on CMOS inverter reliability A Chenouf, B Djezzar, A Benadelmoumene, H Tahi 2012 24th International Conference on Microelectronics (ICM), 1-4, 2012 | 8 | 2012 |
| Reliability analysis of CMOS inverter subjected to AC & DC NBTI stresses A Chenouf, B Djezzar, A Benadelmoumene, H Tahi, M Goudjil 2014 9th International Design and Test Symposium (IDT), 142-146, 2014 | 7 | 2014 |
| Does PMOS Vth shift wholly capture the degradation of CMOS inverter circuit under DC NBTI? A Chenouf, B Djezzar, A Benabedelmoumene, H Tahi 2012 IEEE International Integrated Reliability Workshop Final Report, 191-194, 2012 | 6 | 2012 |
| Two-point capacitance-voltage (TPCV) concept: A new method for NBTI characterization A Benabdelmoumene, B Djezzar, H Tahi, A Chenouf, L Trombetta, ... 2012 IEEE International Integrated Reliability Workshop Final Report, 175-178, 2012 | 5 | 2012 |
| On the fly oxide trap (OTFOT) concept: A new method for bias temperature instability characterization B Djezzar, H Tahi, A Benabdelmoumene, F Hadjlarbi, A Chenouf 2012 19th IEEE International Symposium on the Physical and Failure Analysis …, 2012 | 5 | 2012 |
| Investigating the NBTI effect on P-and N-substrate MOS capacitors and p-MOSFET transistors A Benabdelmoumene, B Djezzar, H Tahi, A Chenouf, G Mohamed, ... 2013 25th International Conference on Microelectronics (ICM), 1-4, 2013 | 4 | 2013 |
| On the permanent components of negative bias temperature instability B Djezzar, H Tahi, A Benabdelmoumene, A Chenouf, M Goudjil 2013 25th International Conference on Microelectronics (ICM), 1-4, 2013 | 4 | 2013 |
| A new eye on NBTI-induced traps up to device lifetime using on the fly oxide trap method B Djezzar, H Tahi, A Benabdelmoumene, A Chenouf 2012 24th International Conference on Microelectronics (ICM), 1-4, 2012 | 4 | 2012 |
| Charge pumping, geometric component, and degradation parameter extraction in MOSFET devices H Tahi, C Tahanout, B Djezzar, M Boubaaya, A Benabdelmoumene, ... IEEE Transactions on Device and Materials Reliability 15 (4), 567-575, 2015 | 3 | 2015 |
| A Low-Power Synthesis of Submicron Interconnects with Time and Area Constraints A Mahdoum, R Benmadache, A Chenouf, ML Berrandjia International Journal of Circuits, Systems and Signal Processing 4 (3), 112-119, 2010 | 3 | 2010 |
Boualem DJEZZAR, Ph.D.Centre de Développement des Technologies Avancées, CDTA在 cdta.dz 的电子邮件经过验证
