Radiation-induced error mitigation by read-retry technique for MLC 3-D NAND flash memory P Kumari, U Surendranathan, M Wasiolek, K Hattar, NP Bhat, B Ray IEEE Transactions on Nuclear Science 68 (5), 1032-1039, 2021 | 24 | 2021 |
Total ionizing dose effects on long-term data retention characteristics of commercial 3-D NAND memories M Buddhanoy, P Kumari, U Surendranathan, M Wasiolek, K Hattar, B Ray IEEE Transactions on Nuclear Science 69 (3), 390-396, 2021 | 16 | 2021 |
Gamma-ray-induced error pattern analysis for MLC 3-D NAND flash memories U Surendranathan, P Kumari, M Wasiolek, K Hattar, T Boykin, B Ray IEEE Transactions on Nuclear Science 68 (5), 733-739, 2021 | 15 | 2021 |
Total ionizing dose effects on the power-up state of static random-access memory U Surendranathan, H Wilson, M Wasiolek, K Hattar, A Milenkovic, B Ray IEEE Transactions on Nuclear Science 70 (4), 641-647, 2023 | 9 | 2023 |
Analytical bit-error model of NAND flash memories for dosimetry application P Kumari, U Surendranathan, M Wasiolek, K Hattar, N Bhat, B Ray IEEE Transactions on Nuclear Science 69 (3), 478-484, 2021 | 9 | 2021 |
Total ionizing dose effects on read noise of MLC 3-D NAND memories U Surendranathan, M Wasiolek, K Hattar, DM Fleetwood, B Ray IEEE Transactions on Nuclear Science 69 (3), 321-326, 2022 | 5 | 2022 |
Analysis of SRAM PUF integrity under ionizing radiation: Effects of stored data and technology node U Surendranathan, H Wilson, LR Cao, A Milenkovic, B Ray IEEE Transactions on Nuclear Science 71 (4), 485-491, 2023 | 3 | 2023 |
Technology scaling effects on sram-puf reliability under ionizing radiation U Surendranathan, H Wilson, B Ray 2023 Device Research Conference (DRC), 1-2, 2023 | 3 | 2023 |
Systems and methods for detecting counterfeit or defective memory B Ray, U Surendranathan, P Kumari, M Raquibuzzaman US Patent 11,728,000, 2023 | 1 | 2023 |
New Total-Ionizing-Dose Resistant Data Storing Technique for NAND Flash Memory M Buddhanoy, S Sakib, U Surendranathan, M Wasiolek, K Hattar, ... IEEE Transactions on Device and Materials Reliability 22 (3), 438-446, 2022 | 1 | 2022 |
Wi-Fi 6: performance analysis of IEEE 802.11 AX U Surendranathan | 1 | 2019 |
Technology Scaling Effects on SRAM Data Remanence U Surendranathan, F Hoque, A Milenkovic, B Ray 2024 Device Research Conference (DRC), 1-2, 2024 | | 2024 |
Exploring the impact of ionizing radiation on security and reliability in modern semiconductor memories U Surendranathan The University of Alabama in Huntsville, 2024 | | 2024 |
Irradiation Effects on Power and Timing Characteristics of Commercial 3-D NAND Flash Memories M Raquibuzzaman, U Surendranathan, M Buddhanoy, B Ray 2023 IEEE Radiation Effects Data Workshop (REDW)(in conjunction with 2023 …, 2023 | | 2023 |
Total-Ionizing-Dose Effects on Long-term Data Retention Characteristics of Commercial 3D NAND Memories. P Kumari, U Surendranathan, MA Olszewska-Wasiolek, KM Hattar Sandia National Lab.(SNL-NM), Albuquerque, NM (United States), 2021 | | 2021 |