| The forward physics facility at the high-luminosity LHC JL Feng, F Kling, MH Reno, J Rojo, D Soldin, LA Anchordoqui, J Boyd, ... Journal of Physics G: Nuclear and Particle Physics 50 (3), 030501, 2023 | 222 | 2023 |
| Cryogenic MOS transistor model A Beckers, F Jazaeri, C Enz IEEE Transactions on Electron Devices 65 (9), 3617-3625, 2018 | 159 | 2018 |
| Characterization and modeling of 28-nm bulk CMOS technology down to 4.2 K A Beckers, F Jazaeri, C Enz IEEE Journal of the Electron Devices Society 6, 1007-1018, 2018 | 157 | 2018 |
| Theoretical limit of low temperature subthreshold swing in field-effect transistors A Beckers, F Jazaeri, C Enz IEEE Electron Device Letters 41 (2), 276-279, 2019 | 152 | 2019 |
| Analytical model for ultra-thin body junctionless symmetric double gate MOSFETs in subthreshold regime F Jazaeri, L Barbut, A Koukab, JM Sallese Solid-State Electronics 82, 103-110, 2013 | 151 | 2013 |
| Constructing built‐in electric field in heterogeneous nanowire arrays for efficient overall water electrolysis S Zhang, C Tan, R Yan, X Zou, FL Hu, Y Mi, C Yan, S Zhao Angewandte Chemie 135 (26), e202302795, 2023 | 132 | 2023 |
| A review on quantum computing: From qubits to front-end electronics and cryogenic MOSFET physics F Jazaeri, A Beckers, A Tajalli, JM Sallese 2019 MIXDES-26th International Conference" Mixed Design of Integrated …, 2019 | 117 | 2019 |
| Characterization and modeling of 28-nm FDSOI CMOS technology down to cryogenic temperatures A Beckers, F Jazaeri, H Bohuslavskyi, L Hutin, S De Franceschi, C Enz Solid-State Electronics 159, 106-115, 2019 | 100 | 2019 |
| Double-gate negative-capacitance MOSFET with PZT gate-stack on ultra thin body SOI: An experimentally calibrated simulation study of device performance A Saeidi, F Jazaeri, I Stolichnov, AM Ionescu IEEE Transactions on Electron Devices 63 (12), 4678-4684, 2016 | 100 | 2016 |
| Cryogenic characterization of 28 nm bulk CMOS technology for quantum computing A Beckers, F Jazaeri, A Ruffino, C Bruschini, A Baschirotto, C Enz 2017 47th European Solid-State Device Research Conference (ESSDERC), 62-65, 2017 | 93 | 2017 |
| Negative capacitance as performance booster for tunnel FETs and MOSFETs: an experimental study A Saeidi, F Jazaeri, F Bellando, I Stolichnov, GV Luong, QT Zhao, S Mantl, ... IEEE electron device letters 38 (10), 1485-1488, 2017 | 82 | 2017 |
| Physical model of low-temperature to cryogenic threshold voltage in MOSFETs A Beckers, F Jazaeri, A Grill, S Narasimhamoorthy, B Parvais, C Enz IEEE Journal of the Electron Devices Society 8, 780-788, 2020 | 79 | 2020 |
| Cryogenic MOSFET threshold voltage model A Beckers, F Jazaeri, C Enz ESSDERC 2019-49th European Solid-State Device Research Conference (ESSDERC …, 2019 | 60 | 2019 |
| Modeling nanowire and double-gate junctionless field-effect transistors F Jazaeri, JM Sallese Cambridge University Press, 2018 | 59 | 2018 |
| Characterization of gigarad total ionizing dose and annealing effects on 28-nm bulk MOSFETs CM Zhang, F Jazaeri, A Pezzotta, C Bruschini, G Borghello, F Faccio, ... IEEE Transactions on Nuclear Science 64 (10), 2639-2647, 2017 | 55 | 2017 |
| A common core model for junctionless nanowires and symmetric double-gate FETs JM Sallese, F Jazaeri, L Barbut, N Chevillon, C Lallement IEEE transactions on electron devices 60 (12), 4277-4280, 2013 | 55 | 2013 |
| Modeling and design space of junctionless symmetric DG MOSFETs with long channel F Jazaeri, L Barbut, JM Sallese IEEE transactions on electron devices 60 (7), 2120-2127, 2013 | 54 | 2013 |
| Performance and luminosity models for heavy-ion operation at the CERN Large Hadron Collider R Bruce, MA Jebramcik, JM Jowett, T Mertens, M Schaumann The European Physical Journal Plus 136 (7), 745, 2021 | 50 | 2021 |
| Design-oriented modeling of 28 nm FDSOI CMOS technology down to 4.2 K for quantum computing A Beckers, F Jazaeri, H Bohuslavskyi, L Hutin, S De Franceschi, C Enz 2018 Joint International EUROSOI Workshop and International Conference on …, 2018 | 48 | 2018 |
| ATLAS software and computing HL-LHC roadmap ATLAS collaboration | 47 | 2022 |
Christian EnzEcole Polytechnique Fédérale de Lausanne (EPFL)在 epfl.ch 的电子邮件经过验证
