| Field effect transistor manufacturing method H Yabuta, M Sano, T Iwasaki, H Hosono, T Kamiya, K Nomura US Patent 7,829,444, 2010 | 3800 | 2010 |
| Oxide semiconductor thin film transistor and method of manufacturing the same H Yabuta US Patent App. 11/511,263, 2007 | 3750 | 2007 |
| Method of fabricating oxide semiconductor device N Kaji, H Yabuta US Patent 7,468,304, 2008 | 3747 | 2008 |
| High-mobility thin-film transistor with amorphous channel fabricated by room temperature rf-magnetron sputtering H Yabuta, M Sano, K Abe, T Aiba, T Den, H Kumomi, K Nomura, T Kamiya, ... Applied physics letters 89 (11), 112123, 2006 | 1429 | 2006 |
| 42.1: Invited Paper: Improved Amorphous In‐Ga‐Zn‐O TFTs R Hayashi, A Sato, M Ofuji, K Abe, H Yabuta, M Sano, H Kumomi, ... SID Symposium Digest of Technical Papers 39 (1), 621-624, 2008 | 683 | 2008 |
| Oxide semiconductor device including insulating layer and display apparatus using the same A Sato, R Hayashi, H Yabuta, T Watanabe US Patent 8,502,217, 2013 | 300 | 2013 |
| Bottom gate type thin film transistor, method of manufacturing the same, and display apparatus R Hayashi, N Kaji, H Yabuta US Patent 8,148,721, 2012 | 293 | 2012 |
| Method for manufacturing thin film transistor using oxide semiconductor and display apparatus H Omura, R Hayashi, N Kaji, H Yabuta US Patent 8,143,115, 2012 | 263 | 2012 |
| Sputtering formation of -type SnO thin-film transistors on glass toward oxide complimentary circuits H Yabuta, N Kaji, R Hayashi, H Kumomi, K Nomura, T Kamiya, M Hirano, ... Applied Physics Letters 97 (7), 072111, 2010 | 254 | 2010 |
| Thin-film transistor and method of manufacturing same N Kaji, R Hayashi, H Yabuta, K Abe US Patent 9,153,703, 2015 | 227 | 2015 |
| Bottom gate type thin film transistor, method of manufacturing the same, and display apparatus R Hayashi, N Kaji, H Yabuta US Patent App. 13/419,417, 2012 | 188 | 2012 |
| Method for manufacturing field-effect transistor R Hayashi, H Yabuta, Y Tateishi, N Kaji US Patent 8,110,436, 2012 | 175 | 2012 |
| (Ba+Sr)/Ti ratio dependence of the dielectric properties for (Ba0.5Sr0.5)TiO3 thin films prepared by ion beam sputtering S Yamamichi, H Yabuta, T Sakuma, Y Miyasaka Applied physics letters 64 (13), 1644-1646, 1994 | 162 | 1994 |
| Circuits using uniform TFTs based on amorphous In‐Ga‐Zn‐O R Hayashi, M Ofuji, N Kaji, K Takahashi, K Abe, H Yabuta, M Sano, ... Journal of the Society for Information Display 15 (11), 915-921, 2007 | 140 | 2007 |
| Thin film transistor and method of manufacturing the same A Sato, R Hayashi, H Yabuta, M Sano US Patent 8,445,902, 2013 | 139 | 2013 |
| Thin film transistor, method of manufacturing the same, and display apparatus R Hayashi, N Kaji, H Yabuta US Patent 9,905,699, 2018 | 114 | 2018 |
| Structural, dielectric, and piezoelectric properties of Mn-doped BaTiO3–Bi (Mg1/2Ti1/2) O3–BiFeO3 ceramics I Fujii, R Mitsui, K Nakashima, N Kumada, M Shimada, T Watanabe, ... Japanese journal of applied physics 50 (9S2), 09ND07, 2011 | 102 | 2011 |
| Top gate thin film transistor and display apparatus including the same A Sato, H Kumomi, H Yabuta, R Hayashi, Y Takai US Patent 8,624,240, 2014 | 100 | 2014 |
| Materials, devices, and circuits of transparent amorphous-oxide semiconductor H Kumomi, S Yaginuma, H Omura, A Goyal, A Sato, M Watanabe, ... Journal of Display Technology 5 (12), 531-540, 2009 | 89 | 2009 |
| A stacked capacitor technology with ECR plasma MOCVD (Ba, Sr) TiO/sub 3/and RuO/sub 2//Ru/TiN/TiSi/sub x/storage nodes for Gb-scale DRAMs S Yamamichi, P Lesaicherre, H Yamaguchi, K Takemura, S Sone, ... IEEE Transactions on Electron Devices 44 (7), 1076-1083, 1997 | 70 | 1997 |
Toshio KamiyaTokyo Institute of Technology在 msl.titech.ac.jp 的电子邮件经过验证
