| Facile synthesis of silver nanoparticles with high concentration via a CTAB-induced silver mirror reaction X Li, J Shen, A Du, Z Zhang, G Gao, H Yang, J Wu Colloids and Surfaces A: Physicochemical and Engineering Aspects 400, 73-79, 2012 | 59 | 2012 |
| Oxidation induced stress in SiO2/SiC structures X Li, A Ermakov, V Amarasinghe, E Garfunkel, T Gustafsson, LC Feldman Applied Physics Letters 110 (14), 141604, 2017 | 36 | 2017 |
| Aerogel: a potential three-dimensional nanoporous filler for resins A Du, B Zhou, Y Li, X Li, J Ye, L Li, Z Zhang, G Gao, J Shen Journal of Reinforced Plastics and Composites 30 (11), 912-921, 2011 | 27 | 2011 |
| Stepwise internal potential jumps caused by multiple-domain polarization flips in metal/ferroelectric/metal/paraelectric/metal stack X Li, A Toriumi Nature communications 11 (1), 1-7, 2020 | 16 | 2020 |
| Direct relationship between sub-60 mV/dec subthreshold swing and internal potential instability in MOSFET externally connected to ferroelectric capacitor X Li, A Toriumi 2018 IEEE International Electron Devices Meeting (IEDM), 31.3. 1-31.3. 4, 2018 | 16 | 2018 |
| Effect of Si substrate on interfacial SiO2 scavenging in HfO2/SiO2/Si stacks X Li, T Yajima, T Nishimura, K Nagashio, A Toriumi Applied Physics Letters 105 (18), 182902, 2014 | 16 | 2014 |
| Effect of nitrogen passivation on interface composition and physical stress in SiO2/SiC(4H) structures X Li, SS Lee, M Li, A Ermakov, J Medina-Ramos, TT Fister, ... Applied Physics Letters 113 (13), 131601, 2018 | 13 | 2018 |
| Study of Si kinetics in interfacial SiO2 scavenging in HfO2 gate stacks X Li, T Yajima, T Nishimura, A Toriumi Applied Physics Express 8 (6), 061304, 2015 | 11 | 2015 |
| Interface reaction kinetics in SiGe oxidation X Li, Y Noma, W Song, T Nishimura, A Toriumi Applied Physics Letters 115 (23), 232901, 2019 | 8 | 2019 |
| Thermodynamic understanding and analytical modeling of interfacial SiO2 scavenging in HfO2 gate stacks on Si, SiGe, and SiC X Li, T Yajima, T Nishimura, A Toriumi Applied Physics Letters 110 (14), 142903, 2017 | 8 | 2017 |
| Scavenging Kinetics of Interfacial SiO2 in HfO2/SiO2/Si Gate Stacks A Toriumi, X Li ECS Transactions 69 (10), 155-163, 2015 | 7 | 2015 |
| HfO2-assisted SiO2 reduction in HfO2/SiO2/Si stacks X Li, T Yajima, T Nishimura, K Nagashio, A Toriumi Thin Solid Films 557, 272-275, 2014 | 7 | 2014 |
| ECS Meeting Abstracts A Toriumi, X Li | 7* | |
| Interfacial SiO2 scavenging kinetics in HfO2 gate stack X Li, T Nishimura, A Toriumi Applied Physics Letters 109 (20), 202905, 2016 | 3 | 2016 |
| Self-decomposition of SiO 2 due to Si-chemical potential increase in SiO 2 between HfO 2 and substrate-Comprehensive understanding of SiO 2-IL scavenging in HfO 2 gate stacks … X Li, A Toriumi 2015 IEEE International Electron Devices Meeting (IEDM), 21.4. 1-21.4. 4, 2015 | 2 | 2015 |
| Analytical Formulation of SiO2-IL scavenging in HfO2/SiO2/Si gate stacks - A key is the SiO2/Si interface reaction X Li, T Yajima, T Nishimura, K Nagashio, A Toriumi 2014 IEEE International Electron Devices Meeting, 21.2. 1-21.2. 4, 2014 | 1 | 2014 |
| Preparation of Silver Colloid Nanoparticles with High Stability and Concentrations on the Basis of Analogous Silver Mirror Reaction L Xiuyan, S Jun, GD Du Ai, Z Zhihua, Z Bin, W Guangming, N Xingyuan, ... Rare Metal Materials and Engineering 1, 2012 | 1 | 2012 |
| Significance of kinetic-linkage of oxygen vacancy with SiO2/Si interface for SiO2-IL scavenging in HfO2 gate stacks X Li, T Yajima, T Nishimura, A Toriumi 2015 Silicon Nanoelectronics Workshop (SNW), 1-2, 2015 | | 2015 |
| Analytical formulation of interfacial SiO₂ scavenging in HfO₂/SiO₂/Si stacks (シリコン材料・デバイス)--(先端 CMOS デバイス・プロセス技術 (IEDM 特集)) 李秀妍， 矢嶋赳彬， 西村知紀， 長汐晃輔， 鳥海明 電子情報通信学会技術研究報告= IEICE technical report: 信学技報 114 (421), 1-4, 2015 | | 2015 |
| Effect of Si substrate on interfacial SiO {sub 2} scavenging in HfO {sub 2}/SiO {sub 2}/Si stacks X Li, T Yajima, T Nishimura, K Nagashio, A Toriumi Applied Physics Letters 105 (18), 2014 | | 2014 |
Kosuke NagashioThe University of Tokyo在 material.t.u-tokyo.ac.jp 的电子邮件经过验证
