| High-resolution electrohydrodynamic jet printing JU Park, M Hardy, SJ Kang, K Barton, K Adair, DK Mukhopadhyay, ... Nature materials 6 (10), 782-789, 2007 | 1654 | 2007 |
| Superluminescent diodes by crystallographic etching MT Hardy, YD Lin, H Ohta, SP DenBaars, JS Speck, S Nakamura, ... US Patent App. 12/913,638, 2011 | 254 | 2011 |
| Group III-nitride lasers: a materials perspective MT Hardy, DF Feezell, SP DenBaars, S Nakamura Materials Today 14 (9), 408-415, 2011 | 189 | 2011 |
| Epitaxial ScAlN grown by molecular beam epitaxy on GaN and SiC substrates MT Hardy, BP Downey, N Nepal, DF Storm, DS Katzer, DJ Meyer Applied Physics Letters 110 (16), 2017 | 128 | 2017 |
| AlGaN-cladding free green semipolar GaN based laser diode with a lasing wavelength of 506.4 nm A Tyagi, RM Farrell, KM Kelchner, CY Huang, PS Hsu, DA Haeger, ... | 119 | 2010 |
| Blue-green InGaN/GaN laser diodes on miscut m-plane GaN substrate YD Lin, MT Hardy, PS Hsu, KM Kelchner, CY Huang, DA Haeger, ... Applied physics express 2 (8), 082102, 2009 | 79 | 2009 |
| 444.9 nm semipolar (112¯ 2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer P Shan Hsu, MT Hardy, F Wu, I Koslow, EC Young, AE Romanov, K Fujito, ... Applied Physics Letters 100 (2), 2012 | 76 | 2012 |
| Performance and polarization effects in (112 2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers IL Koslow, MT Hardy, P Shan Hsu, PY Dang, F Wu, A Romanov, YR Wu, ... Applied Physics Letters 101 (12), 2012 | 63 | 2012 |
| Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes MT Hardy, CO Holder, DF Feezell, S Nakamura, JS Speck, DA Cohen, ... Applied Physics Letters 103 (8), 2013 | 59 | 2013 |
| Nonpolar AlGaN-cladding-free blue laser diodes with InGaN waveguiding KM Kelchner, YD Lin, MT Hardy, CY Huang, PS Hsu, RM Farrell, ... Applied Physics Express 2 (7), 071003, 2009 | 59 | 2009 |
| Epitaxial lift-off and transfer of III-N materials and devices from SiC substrates DJ Meyer, BP Downey, DS Katzer, N Nepal, VD Wheeler, MT Hardy, ... IEEE Transactions on Semiconductor Manufacturing 29 (4), 384-389, 2016 | 54 | 2016 |
| Stress relaxation and critical thickness for misfit dislocation formation in (10-10) and (30-3-1) InGaN/GaN heteroepitaxy PS Hsu, MT Hardy, EC Young, AE Romanov, SP DenBaars, S Nakamura, ... APPLIED PHYSICS LETTERS 100, 171917, 2012 | 54 | 2012 |
| Pulsed high-power AlGaN-cladding-free blue laser diodes on semipolar (202 1) GaN substrates A Pourhashemi, RM Farrell, MT Hardy, PS Hsu, KM Kelchner, JS Speck, ... Applied Physics Letters 103 (15), 2013 | 52 | 2013 |
| Trace analysis of non-basal plane misfit stress relaxation in (20-21) and (30-3-1) semipolar InGaN/GaN heterostructures MT Hardy, PS Hsu, F Wu, IL Koslow, EC Young, S Nakamura, ... Applied Physics Letters 100 (20), 202103-202103-4, 2012 | 50 | 2012 |
| Demonstration of 505 nm laser diodes using wavelength-stable semipolar (2021) InGaN/GaN quantum wells CY Huang, MT Hardy, K Fujito, DF Feezell, JS Speck, SP DenBaars, ... Applied Physics Letters 99 (24), 2011 | 50 | 2011 |
| Control of phase purity in high scandium fraction heteroepitaxial ScAlN grown by molecular beam epitaxy MT Hardy, EN Jin, N Nepal, DS Katzer, BP Downey, VJ Gokhale, ... Applied Physics Express 13 (6), 065509, 2020 | 49 | 2020 |
| Epitaxial metallic β-Nb2N films grown by MBE on hexagonal SiC substrates DS Katzer, N Nepal, DJ Meyer, BP Downey, VD Wheeler, DF Storm, ... Applied Physics Express 8 (8), 085501, 2015 | 49 | 2015 |
| m-Plane GaN-based blue superluminescent diodes fabricated using selective chemical wet etching MT Hardy, KM Kelchner, YD Lin, PS Hsu, K Fujito, H Ohta, JS Speck, ... Applied Physics Express 2 (12), 121004, 2009 | 49 | 2009 |
| Heteroepitaxial growth of β-Ga2O3 films on SiC via molecular beam epitaxy N Nepal, DS Katzer, BP Downey, VD Wheeler, LO Nyakiti, DF Storm, ... Journal of Vacuum Science & Technology A 38 (6), 2020 | 44 | 2020 |
| Epitaxial ScAlN etch-stop layers grown by molecular beam epitaxy for selective etching of AlN and GaN MT Hardy, BP Downey, DJ Meyer, N Nepal, DF Storm, DS Katzer IEEE Transactions on Semiconductor Manufacturing 30 (4), 475-479, 2017 | 43 | 2017 |
David J. MeyerNaval Research Laboratory在 nrl.navy.mil 的电子邮件经过验证
