| Neuronal dynamics in HfO x/AlO y-based homeothermic synaptic memristors with low-power and homogeneous resistive switching S Kim, J Chen, YC Chen, MH Kim, H Kim, MW Kwon, S Hwang, M Ismail, ... Nanoscale 11 (1), 237-245, 2019 | 108 | 2019 |
| Forming-free bipolar resistive switching in nonstoichiometric ceria films M Ismail, CY Huang, D Panda, CJ Hung, TL Tsai, JH Jieng, CA Lin, ... Nanoscale research letters 9, 1-8, 2014 | 102 | 2014 |
| Endurance and Cycle-to-cycle Uniformity Improvement in Tri- Layered CeO2/Ti/CeO2 Resistive Switching Devices by Changing Top Electrode Material KIMYN Anwar Manzoor Rana, Tahira Akbar, Muhammad Ismail, Ejaz Ahmad, Fayyaz ... Scientific Reports 7 (DOI: 10.1038/srep39539), 39539, 2017 | 99 | 2017 |
| Improved endurance and resistive switching stability in ceria thin films due to charge transfer ability of Al dopant M Ismail, E Ahmed, AM Rana, F Hussain, I Talib, MY Nadeem, D Panda, ... ACS applied materials & interfaces 8 (9), 6127-6136, 2016 | 85 | 2016 |
| Demonstration of synaptic and resistive switching characteristics in W/TiO2/HfO2/TaN memristor crossbar array for bioinspired neuromorphic computing M Ismail, U Chand, C Mahata, J Nebhen, S Kim Journal of Materials Science & Technology 96, 94-102, 2022 | 76 | 2022 |
| Controllable analog resistive switching and synaptic characteristics in ZrO2/ZTO bilayer memristive device for neuromorphic systems M Ismail, H Abbas, C Choi, S Kim Applied Surface Science 529, 147107, 2020 | 71 | 2020 |
| Effect of interlayer on resistive switching properties of SnO2-based memristor for synaptic application MK Rahmani, M Ismail, C Mahata, S Kim Results in Physics 18, 103325, 2020 | 68 | 2020 |
| Forming-free Pt/Al2O3/HfO2/HfAlOx/TiN memristor with controllable multilevel resistive switching and neuromorphic characteristics for artificial synapse M Ismail, C Mahata, S Kim Journal of Alloys and Compounds 892, 162141, 2022 | 67 | 2022 |
| Stabilized and RESET-voltage controlled multi-level switching characteristics in ZrO2-based memristors by inserting a-ZTO interface layer M Ismail, H Abbas, C Choi, S Kim Journal of Alloys and Compounds 835, 155256, 2020 | 58 | 2020 |
| Synaptic characteristics of amorphous boron nitride-based memristors on a highly doped silicon substrate for neuromorphic engineering J Lee, JH Ryu, B Kim, F Hussain, C Mahata, E Sim, M Ismail, Y Abbas, ... ACS applied materials & interfaces 12 (30), 33908-33916, 2020 | 55 | 2020 |
| Effects of Gibbs free energy difference and oxygen vacancies distribution in a bilayer ZnO/ZrO2 structure for applications to bipolar resistive switching M Ismail, MK Rahmani, SA Khan, J Choi, F Hussain, Z Batool, AM Rana, ... Applied Surface Science 498, 143833, 2019 | 55 | 2019 |
| Zinc tin oxide synaptic device for neuromorphic engineering JH Ryu, B Kim, F Hussain, M Ismail, C Mahata, T Oh, M Imran, KK Min, ... IEEE Access 8, 130678-130686, 2020 | 54 | 2020 |
| Tunable Synaptic Characteristics of a Ti/TiO2/Si Memory Device for Reservoir Computing J Yang, H Cho, H Ryu, M Ismail, C Mahata, S Kim ACS Applied Materials & Interfaces 13 (28), 33244-33252, 2021 | 51 | 2021 |
| Filamentary and interface switching of CMOS-compatible Ta2O5 memristor for non-volatile memory and synaptic devices JH Ryu, F Hussain, C Mahata, M Ismail, Y Abbas, MH Kim, C Choi, ... Applied Surface Science 529, 147167, 2020 | 51 | 2020 |
| Effect of Gd-Doping on Structural, Optical, and Magnetic Properties of NiFe2O4 As-prepared Thin Films via Facile Sol–Gel Approach H Yao, X Ning, H Zhao, A Hao, M Ismail ACS omega 6 (9), 6305-6311, 2021 | 49 | 2021 |
| Resistive switching characteristics and mechanism of bilayer HfO2/ZrO2 structure deposited by radio-frequency sputtering for nonvolatile memory M Ismail, Z Batool, K Mahmood, AM Rana, BD Yang, S Kim Results in Physics 18, 103275, 2020 | 49 | 2020 |
| Improved unipolar resistive switching characteristics of Au-doped nickel ferrite magnetic thin films for nonvolatile memory applications DB Aize Hao, Muhammad Ismail, Shuai He, Ni Qin, Wenhua Huang, Jiang Wu Journal of Alloys and Compounds 732, 573-584, 2017 | 49* | 2017 |
| Ag-NPs doping enhanced resistive switching performance and induced changes in magnetic properties of NiFe2O4 thin films JWDB Aize Hao, Muhammad Ismail, Shuai He, Ni Qin, Wenhua Huang RSC Advance 7, 46665, 2017 | 49 | 2017 |
| Implementation of convolutional neural network and 8-bit reservoir computing in CMOS compatible VRRAM J Park, TH Kim, O Kwon, M Ismail, C Mahata, Y Kim, S Kim, S Kim Nano Energy 104, 107886, 2022 | 47 | 2022 |
| Bio-inspired synaptic functions from a transparent zinc-tin-oxide-based memristor for neuromorphic engineering JH Ryu, B Kim, F Hussain, C Mahata, M Ismail, Y Kim, S Kim Applied Surface Science 544, 148796, 2021 | 45 | 2021 |
Sungjun KimDivision of Electronics and Electrical Engineering, Dongguk University在 dongguk.edu 的电子邮件经过验证
