受强制性开放获取政策约束的文章 - chi-woo lee了解详情
无法在其他位置公开访问的文章：20 篇
SOI gated resistor: CMOS without junctions
JP Colinge, CW Lee, A Afzalian, N Dehdashti, R Yan, I Ferain, P Razavi, ...
2009 IEEE International SOI Conference, 1-2, 2009
强制性开放获取政策： Science Foundation Ireland
Junctionless 6T SRAM cell
A Kranti, CW Lee, I Ferain, R Yan, N Akhavan, P Razavi, R Yu, ...
Electronics letters 46 (22), 1491-1493, 2010
强制性开放获取政策： Science Foundation Ireland
Junctionless nanowire transistor: complementary metal-oxide-semiconductor without junctions
JP Colinge, I Ferain, A Kranti, CW Lee, ND Akhavan, P Razavi, R Yan, ...
Science of Advanced Materials 3 (3), 477-482, 2011
强制性开放获取政策： Science Foundation Ireland
A simulation comparison between junctionless and inversion-mode MuGFETs
JP Colinge, A Kranti, R Yan, I Ferain, ND Akhavan, P Razavi, CW Lee, ...
ECS Transactions 35 (5), 63, 2011
强制性开放获取政策： Science Foundation Ireland
Investigation of high-performance sub-50 nm junctionless nanowire transistors
R Yan, A Kranti, I Ferain, CW Lee, R Yu, N Dehdashti, P Razavi, ...
Microelectronics Reliability 51 (7), 1166-1171, 2011
强制性开放获取政策： Science Foundation Ireland
Quantum confinement effects in capacitance behavior of multigate silicon nanowire MOSFETs
A Afzalian, CW Lee, ND Akhavan, R Yan, I Ferain, JP Colinge
IEEE transactions on nanotechnology 10 (2), 300-309, 2010
强制性开放获取政策： Science Foundation Ireland
Properties of accumulation-mode multi-gate field-effect transistors
JP Colinge, D Lederer, A Afzalian, R Yan, CW Lee, ND Akhavan, W Xiong
Japanese journal of applied physics 48 (3R), 034502, 2009
强制性开放获取政策： Higher Education Authority, Ireland, Science Foundation Ireland
Nanowire zero-capacitor DRAM transistors with and without junctions
CW Lee, R Yan, I Ferain, A Kranti, ND Akhvan, P Razavi, R Yu, ...
10th IEEE International Conference on Nanotechnology, 242-245, 2010
强制性开放获取政策： Science Foundation Ireland
Analog operation of junctionless transistors at cryogenic temperatures
RT Doria, MA Pavanello, RD Trevisoli, M De Souza, CW Lee, I Ferain, ...
2010 IEEE International SOI Conference (SOI), 1-2, 2010
强制性开放获取政策： Science Foundation Ireland
Simulation of quantum current oscillations in trigate SOI MOSFETs
ND Akhavan, A Afzalian, CW Lee, R Yan, I Ferain, P Razavi, G Fagas, ...
IEEE transactions on electron devices 57 (5), 1102-1109, 2010
强制性开放获取政策： Science Foundation Ireland
Influence of elastic and inelastic electron–phonon interaction on quantum transport in multigate silicon nanowire MOSFETs
ND Akhavan, A Afzalian, A Kranti, I Ferain, CW Lee, R Yan, P Razavi, ...
IEEE Transactions on Electron Devices 58 (4), 1029-1037, 2011
强制性开放获取政策： Science Foundation Ireland
LDD depletion effects in thin-BOX FDSOI devices with a ground plane
R Yan, R Duane, P Razavi, A Afzalian, I Ferain, CW Lee, ...
2009 IEEE International SOI Conference, 1-2, 2009
强制性开放获取政策： Science Foundation Ireland
Comparative study of random telegraph noise in junctionless and inversion-mode MuGFETs
A Nazarov, CW Lee, A Kranti, I Ferain, R Yan, ND Akhavan, P Razavi, ...
ECS Transactions 35 (5), 73, 2011
强制性开放获取政策： Science Foundation Ireland
Influence of gate misalignment on the electrical characteristics of MuGFETS
CW Lee, A Afzalian, I Ferain, R Yan, ND Akhavan, W Xiong, JP Colinge
Solid-State Electronics 54 (3), 226-230, 2010
强制性开放获取政策： Science Foundation Ireland
NBTI and hot-carrier effects in accumulation-mode Pi-gate pMOSFETs
CW Lee, I Ferain, A Afzalian, R Yan, N Dehdashti, P Razavi, JP Colinge, ...
Microelectronics Reliability 49 (9-11), 1044-1047, 2009
强制性开放获取政策： Science Foundation Ireland
Comparison of different surface orientation in narrow fin MuGFETs
CW Lee, A Afzalian, I Ferain, R Yan, N Dehdashti, KY Byun, C Colinge, ...
Microelectronic engineering 86 (12), 2381-2384, 2009
强制性开放获取政策： Science Foundation Ireland
Variable-barrier tunneling SOI transistor (VBT)
A Afzalian, N Dehdashti, I Ferain, CW Lee, R Yan, P Razavi, JP Colinge
2009 IEEE International SOI Conference, 1-2, 2009
强制性开放获取政策： Science Foundation Ireland
Three-dimensional NEGF simulations of constriction tunnel barrier silicon nanowire MUGFETs
A Afzalian, CW Lee, R Yan, ND Akhavan, C Colinge, JP Colinge
ECS Transactions 19 (4), 229, 2009
强制性开放获取政策： Science Foundation Ireland
Hot carrier (HC) and bias-temperature-instability (BTI) degradation of MuGFETs on silicon oxide and silicon nitride buried layers
CW Lee, I Ferain, A Afzalian, KY Byun, R Yan, N Dehdashti, P Razavi, ...
2009 Proceedings of the European Solid State Device Research Conference, 261-264, 2009
强制性开放获取政策： Science Foundation Ireland
Device characteristics of Trigate-FET with barrier constrictions in the channel
N Dehdashti, A Afzalian, CW Lee, R Yan, G Fagas, JP Colinge
2009 13th International Workshop on Computational Electronics, 1-4, 2009
强制性开放获取政策： Science Foundation Ireland
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