| On the correct extraction of interface trap density of MOS devices with high-mobility semiconductor substrates K Martens, CO Chui, G Brammertz, B De Jaeger, D Kuzum, M Meuris, ... IEEE Transactions on Electron Devices 55 (2), 547-556, 2008 | 453 | 2008 |
| Record ION/IOFF performance for 65nm Ge pMOSFET and novel Si passivation scheme for improved EOT scalability J Mitard, B De Jaeger, FE Leys, G Hellings, K Martens, G Eneman, ... International Electron Devices Meeting-IEDM, 1-4, 2008 | 148 | 2008 |
| Record ION/IOFF performance for 65nm Ge pMOSFET and novel Si passivation scheme for improved EOT scalability J Mitard, B De Jaeger, F Leys, G Hellings, K Martens, G Eneman, ... International Electron Devices Meeting-IEDM, 873-876, 2008 | 148 | 2008 |
| Ion-implantation issues in the formation of shallow junctions in germanium E Simoen, A Satta, A D’Amore, T Janssens, T Clarysse, K Martens, ... Materials science in semiconductor processing 9 (4-5), 634-639, 2006 | 148 | 2006 |
| Characteristic trapping lifetime and capacitance-voltage measurements of GaAs metal-oxide-semiconductor structures G Brammertz, K Martens, S Sioncke, A Delabie, M Caymax, M Meuris, ... Applied Physics Letters 91 (13), 2007 | 140 | 2007 |
| Capacitance-voltage characterization of GaAs–Al2O3 interfaces G Brammertz, HC Lin, K Martens, D Mercier, S Sioncke, A Delabie, ... Applied Physics Letters 93 (18), 2008 | 136 | 2008 |
| High-performance deep submicron Ge pMOSFETs with halo implants G Nicholas, B De Jaeger, DP Brunco, P Zimmerman, G Eneman, ... IEEE Transactions on Electron Devices 54 (9), 2503-2511, 2007 | 120 | 2007 |
| Semiconductor-metal transition in thin VO2 films grown by ozone based atomic layer deposition G Rampelberg, M Schaekers, K Martens, Q Xie, D Deduytsche, ... Applied Physics Letters 98 (16), 2011 | 109 | 2011 |
| New interface state density extraction method applicable to peaked and high-density distributions for Ge MOSFET development K Martens, B De Jaeger, R Bonzom, J Van Steenbergen, M Meuris, ... IEEE electron device letters 27 (5), 405-408, 2006 | 94 | 2006 |
| Metal‐Insulator Transition in ALD VO2 Ultrathin Films and Nanoparticles: Morphological Control AP Peter, K Martens, G Rampelberg, M Toeller, JM Ablett, J Meersschaut, ... Advanced Functional Materials 25 (5), 679-686, 2015 | 88 | 2015 |
| The Fermi-level efficiency method and its applications on high interface trap density oxide-semiconductor interfaces HC Lin, G Brammertz, K Martens, G De Valicourt, L Negre, WE Wang, ... Applied Physics Letters 94 (15), 2009 | 86 | 2009 |
| Capacitance–voltage characterization of GaAs–oxide interfaces G Brammertz, HC Lin, K Martens, D Mercier, C Merckling, J Penaud, ... Journal of the Electrochemical Society 155 (12), H945, 2008 | 85 | 2008 |
| Electrical properties of III-V/oxide interfaces G Brammertz, HC Lin, K Martens, AR Alian, C Merckling, J Penaud, ... ECS transactions 19 (5), 375, 2009 | 83 | 2009 |
| Multiring circular transmission line model for ultralow contact resistivity extraction H Yu, M Schaekers, T Schram, E Rosseel, K Martens, S Demuynck, ... IEEE Electron Device Letters 36 (6), 600-602, 2015 | 76 | 2015 |
| Enabling the high-performance InGaAs/Ge CMOS: A common gate stack solution D Lin, G Brammertz, S Sioncke, C Fleischmann, A Delabie, K Martens, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 76 | 2009 |
| Interface control of high-k gate dielectrics on Ge M Caymax, M Houssa, G Pourtois, F Bellenger, K Martens, A Delabie, ... Applied surface science 254 (19), 6094-6099, 2008 | 76 | 2008 |
| In situ X-ray diffraction study of the controlled oxidation and reduction in the V–O system for the synthesis of VO 2 and V 2 O 3 thin films G Rampelberg, B De Schutter, W Devulder, K Martens, I Radu, ... Journal of Materials Chemistry C 3 (43), 11357-11365, 2015 | 75 | 2015 |
| Impact of weak Fermi-level pinning on the correct interpretation of III-V MOS CV and GV characteristics K Martens, W Wang, K De Keersmaecker, G Borghs, G Groeseneken, ... Microelectronic engineering 84 (9-10), 2146-2149, 2007 | 74 | 2007 |
| Suitability of high-k gate oxides for III–V devices: A PBTI study in In0.53Ga0.47As devices with Al2O3 J Franco, A Alian, B Kaczer, D Lin, T Ivanov, A Pourghaderi, K Martens, ... 2014 IEEE International Reliability Physics Symposium, 6A. 2.1-6A. 2.6, 2014 | 72 | 2014 |
| Switching mechanism in two-terminal vanadium dioxide devices IP Radu, B Govoreanu, S Mertens, X Shi, M Cantoro, M Schaekers, ... Nanotechnology 26 (16), 165202, 2015 | 71 | 2015 |
Guy BrammertzResearcher, imec-imomec在 imec.be 的电子邮件经过验证
Guy BrammertzResearcher, imec-imomec在 imec.be 的电子邮件经过验证
Ben Kaczerimec在 imec.be 的电子邮件经过验证