| Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs T Aichinger, G Rescher, G Pobegen Microelectronics Reliability 80, 68-78, 2018 | 235 | 2018 |
| Analytic modeling of the bias temperature instability using capture/emission time maps T Grasser, PJ Wagner, H Reisinger, T Aichinger, G Pobegen, M Nelhiebel, ... 2011 International Electron Devices Meeting, 27.4. 1-27.4. 4, 2011 | 219 | 2011 |
| Towards understanding the origin of threshold voltage instability of AlGaN/GaN MIS-HEMTs P Lagger, C Ostermaier, G Pobegen, D Pogany 2012 International Electron Devices Meeting, 13.1. 1-13.1. 4, 2012 | 156 | 2012 |
| The ‘permanent’component of NBTI: Composition and annealing T Grasser, T Aichinger, G Pobegen, H Reisinger, PJ Wagner, J Franco, ... 2011 International Reliability Physics Symposium, 6A. 2.1-6A. 2.9, 2011 | 107 | 2011 |
| On the subthreshold drain current sweep hysteresis of 4H-SiC nMOSFETs G Rescher, G Pobegen, T Aichinger, T Grasser 2016 IEEE International Electron Devices Meeting (IEDM), 10.8. 1-10.8. 4, 2016 | 78 | 2016 |
| On the distribution of NBTI time constants on a long, temperature-accelerated time scale G Pobegen, T Grasser IEEE Transactions on Electron Devices 60 (7), 2148-2155, 2013 | 72 | 2013 |
| Gate-sided hydrogen release as the origin of" permanent" NBTI degradation: From single defects to lifetimes T Grasser, M Waltl, Y Wimmer, W Goes, R Kosik, G Rzepa, H Reisinger, ... 2015 IEEE International Electron Devices Meeting (IEDM), 20.1. 1-20.1. 4, 2015 | 60 | 2015 |
| Hydrogen-related volatile defects as the possible cause for the recoverable component of NBTI T Grasser, K Rott, H Reisinger, M Waltl, P Wagner, F Schanovsky, W Goes, ... 2013 IEEE International Electron Devices Meeting, 15.5. 1-15.5. 4, 2013 | 58 | 2013 |
| Observation of normally distributed energies for interface trap recovery after hot-carrier degradation G Pobegen, S Tyaginov, M Nelhiebel, T Grasser IEEE electron device letters 34 (8), 939-941, 2013 | 56 | 2013 |
| Effect of carbon doping on charging/discharging dynamics and leakage behavior of carbon-doped GaN C Koller, G Pobegen, C Ostermaier, D Pogany IEEE Transactions on Electron Devices 65 (12), 5314-5321, 2018 | 52 | 2018 |
| Preconditioned BTI on 4H-SiC: Proposal for a nearly delay time-independent measurement technique G Rescher, G Pobegen, T Aichinger, T Grasser IEEE Transactions on Electron Devices 65 (4), 1419-1426, 2018 | 50 | 2018 |
| Very fast dynamics of threshold voltage drifts in GaN-based MIS-HEMTs P Lagger, A Schiffmann, G Pobegen, D Pogany, C Ostermaier IEEE Electron Device Letters 34 (9), 1112-1114, 2013 | 45 | 2013 |
| Understanding temperature acceleration for NBTI G Pobegen, T Aichinger, M Nelhiebel, T Grasser 2011 International Electron Devices Meeting, 27.3. 1-27.3. 4, 2011 | 45 | 2011 |
| The interplay of blocking properties with charge and potential redistribution in thin carbon-doped GaN on n-doped GaN layers C Koller, G Pobegen, C Ostermaier, M Huber, D Pogany Applied Physics Letters 111 (3), 2017 | 41 | 2017 |
| Electrically detected magnetic resonance of carbon dangling bonds at the Si-face 4H-SiC/SiO2 interface G Gruber, J Cottom, R Meszaros, M Koch, G Pobegen, T Aichinger, ... Journal of Applied Physics 123 (16), 2018 | 34 | 2018 |
| Threshold voltage instabilities of present SiC-power MOSFETs under positive bias temperature stress G Rescher, G Pobegen, T Grasser Materials Science Forum 858, 481-484, 2016 | 31 | 2016 |
| An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors M Hauck, J Lehmeyer, G Pobegen, HB Weber, M Krieger Communications Physics 2 (1), 5, 2019 | 30 | 2019 |
| Physical modeling of bias temperature instabilities in SiC MOSFETs C Schleich, J Berens, G Rzepa, G Pobegen, G Rescher, S Tyaginov, ... 2019 IEEE International Electron Devices Meeting (IEDM), 20.5. 1-20.5. 4, 2019 | 27 | 2019 |
| Charge pumping measurements on differently passivated lateral 4H-SiC MOSFETs A Salinaro, G Pobegen, T Aichinger, B Zippelius, D Peters, P Friedrichs, ... IEEE Transactions on Electron Devices 62 (1), 155-163, 2014 | 26 | 2014 |
| Evidence of defect band in carbon-doped GaN controlling leakage current and trapping dynamics C Koller, G Pobegen, C Ostermaier, D Pogany 2017 IEEE International Electron Devices Meeting (IEDM), 33.4. 1-33.4. 4, 2017 | 23 | 2017 |
Tibor GrasserProfessor at TU Wien, Head of Institute for Microelectronics, Fellow IEEE在 iue.tuwien.ac.at 的电子邮件经过验证
