受强制性开放获取政策约束的文章 - Gregor Pobegen了解详情
无法在其他位置公开访问的文章：2 篇
Identifying Performance Limiting Defects in Silicon Carbide pn-Junctions: a Theoretical Study
J Cottom, G Gruber, G Pobegen, T Aichinger, AL Shluger
Materials Science Forum 858, 257-260, 2016
强制性开放获取政策： UK Engineering and Physical Sciences Research Council
Evidence for an Abrupt Transition between SiO2 and SiC from EELS and Ab Initio Modelling
J Cottom, MV Mistry, G Gruber, G Pobegen, T Aichinger, AL Shluger
Materials Science Forum 963, 199-203, 2019
强制性开放获取政策： UK Engineering and Physical Sciences Research Council
可在其他位置公开访问的文章：22 篇
Analytic modeling of the bias temperature instability using capture/emission time maps
T Grasser, PJ Wagner, H Reisinger, T Aichinger, G Pobegen, M Nelhiebel, ...
2011 International Electron Devices Meeting, 27.4. 1-27.4. 4, 2011
强制性开放获取政策： Austrian Science Fund
Towards understanding the origin of threshold voltage instability of AlGaN/GaN MIS-HEMTs
P Lagger, C Ostermaier, G Pobegen, D Pogany
2012 International Electron Devices Meeting, 13.1. 1-13.1. 4, 2012
强制性开放获取政策： Fraunhofer-Gesellschaft
On the distribution of NBTI time constants on a long, temperature-accelerated time scale
G Pobegen, T Grasser
IEEE Transactions on Electron Devices 60 (7), 2148-2155, 2013
强制性开放获取政策： Dutch Cancer Society
Hydrogen-related volatile defects as the possible cause for the recoverable component of NBTI
T Grasser, K Rott, H Reisinger, M Waltl, P Wagner, F Schanovsky, W Goes, ...
2013 IEEE International Electron Devices Meeting, 15.5. 1-15.5. 4, 2013
强制性开放获取政策： Austrian Science Fund
Observation of normally distributed energies for interface trap recovery after hot-carrier degradation
G Pobegen, S Tyaginov, M Nelhiebel, T Grasser
IEEE electron device letters 34 (8), 939-941, 2013
强制性开放获取政策： Austrian Science Fund, Dutch Cancer Society
Electrically detected magnetic resonance of carbon dangling bonds at the Si-face 4H-SiC/SiO2 interface
G Gruber, J Cottom, R Meszaros, M Koch, G Pobegen, T Aichinger, ...
Journal of Applied Physics 123 (16), 2018
强制性开放获取政策： Dutch Cancer Society
Physical modeling of bias temperature instabilities in SiC MOSFETs
C Schleich, J Berens, G Rzepa, G Pobegen, G Rescher, S Tyaginov, ...
2019 IEEE International Electron Devices Meeting (IEDM), 20.5. 1-20.5. 4, 2019
强制性开放获取政策： Austrian Science Fund
Recombination defects at the 4H-SiC/SiO2 interface investigated with electrically detected magnetic resonance and ab initio calculations
J Cottom, G Gruber, G Pobegen, T Aichinger, AL Shluger
Journal of Applied Physics 124 (4), 2018
强制性开放获取政策： UK Engineering and Physical Sciences Research Council
Mechanism leading to semi-insulating property of carbon-doped GaN: Analysis of donor acceptor ratio and method for its determination
C Koller, L Lymperakis, D Pogany, G Pobegen, C Ostermaier
Journal of Applied Physics 130 (18), 2021
强制性开放获取政策： European Commission
Implications of gate-sided hydrogen release for post-stress degradation build-up after BTI stress
T Grasser, M Waltl, K Puschkarsky, B Stampfer, G Rzepa, G Pobegen, ...
2017 IEEE International Reliability Physics Symposium (IRPS), 6A-2.1-6A-2.6, 2017
强制性开放获取政策： Austrian Science Fund
Recombination centers in 4H-SiC investigated by electrically detected magnetic resonance and ab initio modeling
J Cottom, G Gruber, P Hadley, M Koch, G Pobegen, T Aichinger, ...
Journal of Applied Physics 119 (18), 2016
强制性开放获取政策： UK Engineering and Physical Sciences Research Council, Dutch Cancer Society
Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors
T Grasser, B Stampfer, M Waltl, G Rzepa, K Rupp, F Schanovsky, ...
2018 IEEE International Reliability Physics Symposium (IRPS), 2A. 2-1-2A. 2-10, 2018
强制性开放获取政策： Austrian Science Fund
Effects of nitridation on SiC/SiO2 structures studied by hard X-ray photoelectron spectroscopy
J Berens, S Bichelmaier, NK Fernando, PK Thakur, TL Lee, M Mascheck, ...
Journal of Physics: Energy 2 (3), 035001, 2020
强制性开放获取政策： UK Engineering and Physical Sciences Research Council
Border trap based modeling of SiC transistor transfer characteristics
SE Tyaginov, M Jech, G Rzepa, A Grill, AM El-Sayed, G Pobegen, ...
2018 International Integrated Reliability Workshop (IIRW), 1-5, 2018
强制性开放获取政策： Austrian Science Fund
Origin of trap assisted tunnelling in ammonia annealed SiC trench MOSFETs
J Berens, MV Mistry, D Waldhör, A Shluger, G Pobegen, T Grasser
Microelectronics Reliability 139, 114789, 2022
强制性开放获取政策： UK Engineering and Physical Sciences Research Council
Modelling the interactions and diffusion of NO in amorphous SiO2
MV Mistry, J Cottom, K Patel, AL Shluger, GC Sosso, G Pobegen
Modelling and Simulation in Materials Science and Engineering 29 (3), 035008, 2021
强制性开放获取政策： UK Engineering and Physical Sciences Research Council
TCAD Modeling of Temperature Activation of the Hysteresis Characteristics of Lateral 4H-SiC MOSFETs
A Vasilev, M Jech, A Grill, G Rzepa, C Schleich, S Tyaginov, A Makarov, ...
IEEE Transactions on Electron Devices 69 (6), 3290-3295, 2022
强制性开放获取政策： Austrian Science Fund
Modeling the Hysteresis of Current-Voltage Characteristics in 4H-SiC Transistors
A Vasilev, M Jech, A Grill, G Rzepa, C Schleich, A Makarov, G Pobegen, ...
2020 IEEE International Integrated Reliability Workshop (IIRW), 1-4, 2020
强制性开放获取政策： Austrian Science Fund
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