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Daniel Nilsson
Daniel Nilsson
Postdoc semiconductor materials, Linköpings University
在 ifm.liu.se 的电子邮件经过验证 - 首页
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引用次数
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年份
Direct generation of linearly polarized photon emission with designated orientations from site-controlled InGaN quantum dots
A Lundskog, CW Hsu, K Fredrik Karlsson, S Amloy, D Nilsson, U Forsberg, ...
Light: Science & Applications 3 (1), e139-e139, 2014
792014
Lattice parameters of AlN bulk, homoepitaxial and heteroepitaxial material
D Nilsson, E Janzén, A Kakanakova-Georgieva
Journal of Physics D: Applied Physics 49 (17), 175108, 2016
732016
Stable and metastable Si negative-U centers in AlGaN and AlN
XT Trinh, D Nilsson, IG Ivanov, E Janzén, A Kakanakova-Georgieva, ...
Applied Physics Letters 105 (16), 2014
712014
High-quality AlN layers grown by hot-wall MOCVD at reduced temperatures
A Kakanakova-Georgieva, D Nilsson, E Janzén
Journal of crystal growth 338 (1), 52-56, 2012
622012
The complex impact of silicon and oxygen on the n-type conductivity of high-Al-content AlGaN
A Kakanakova-Georgieva, D Nilsson, XT Trinh, U Forsberg, NT Son, ...
Applied Physics Letters 102 (13), 2013
422013
Mg‐doped Al0.85Ga0.15N layers grown by hot‐wall MOCVD with low resistivity at room temperature
A Kakanakova‐Georgieva, D Nilsson, M Stattin, U Forsberg, Å Haglund, ...
physica status solidi (RRL)–Rapid Research Letters 4 (11), 311-313, 2010
362010
Electron effective mass in Al0. 72Ga0. 28N alloys determined by mid-infrared optical Hall effect
S Schöche, P Kühne, T Hofmann, M Schubert, D Nilsson, ...
Applied Physics Letters 103 (21), 2013
352013
Controlled growth of hexagonal GaN pyramids by hot-wall MOCVD
A Lundskog, CW Hsu, D Nilsson, KF Karlsson, U Forsberg, PO Holtz, ...
Journal of crystal growth 363, 287-293, 2013
202013
Infrared dielectric functions, phonon modes, and free-charge carrier properties of high-Al-content AlxGa1− xN alloys determined by mid infrared spectroscopic ellipsometry and …
S Schöche, T Hofmann, D Nilsson, A Kakanakova-Georgieva, E Janzén, ...
Journal of Applied Physics 121 (20), 2017
162017
Strain and morphology compliance during the intentional doping of high-Al-content AlGaN layers
D Nilsson, E Janzén, A Kakanakova-Georgieva
Applied Physics Letters 105 (8), 2014
142014
On the behavior of silicon donor in conductive AlxGa1–xN (0.63 ≤ x ≤ 1)
D Nilsson, XT Trinh, E Janzén, NT Son, A Kakanakova‐Georgieva
physica status solidi (b) 252 (6), 1306-1310, 2015
122015
Brominated chemistry for chemical vapor deposition of electronic grade SiC
M Yazdanfar, O Danielsson, E Kalered, P Sukkaew, O Kordina, D Nilsson, ...
Chemistry of Materials 27 (3), 793-801, 2015
122015
Silicon and oxygen in high-Al-content AlGaN: incorporation kinetics and electron paramagnetic resonance study
A Kakanakova-Georgieva, D Nilsson, XT Trinh, NT Son, E Janzén
Solid State Phenomena 205, 441-445, 2014
32014
Negative-U behavior of the Si donor in Al0. 77Ga0. 23N
X Thang Trinh, D Nilsson, IG Ivanov, E Janzén, A Kakanakova-Georgieva, ...
Applied Physics Letters 103 (4), 2013
32013
Highly Si-doped Al0. 72Ga0. 28N layers: n-type conductivity bound by the process temperature
D Nilsson, XT Trinh, TN Son, E Janzén, SL Sahonta, MJ Kappers, ...
2014
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