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| Engineered substrates for future More Moore and More than Moore integrated devices L Clavelier, C Deguet, L Di Cioccio, E Augendre, A Brugere, P Gueguen, ... 2010 International Electron Devices Meeting, 2.6. 1-2.6. 4, 2010 | 258 | 2010 |
| Germanium on Insulator and new 3D architectures opportunities for integration M Vinet, C Le Royer, P Batude, JF Damlencourt, JM Hartmann, L Hutin, ... International Journal of Nanotechnology 7 (4-8), 304-319, 2010 | 202 | 2010 |
| Gate-reflectometry dispersive readout and coherent control of a spin qubit in silicon A Crippa, R Ezzouch, A Aprá, A Amisse, R Lavieville, L Hutin, B Bertrand, ... Nature communications 10 (1), 2776, 2019 | 143 | 2019 |
| 3DVLSI with CoolCube process: An alternative path to scaling P Batude, C Fenouillet-Beranger, L Pasini, V Lu, F Deprat, L Brunet, ... 2015 Symposium on VLSI Technology (VLSI Technology), T48-T49, 2015 | 142 | 2015 |
| Gate-based high fidelity spin readout in a CMOS device M Urdampilleta, DJ Niegemann, E Chanrion, B Jadot, C Spence, ... Nature nanotechnology 14 (8), 737-741, 2019 | 140 | 2019 |
| GeOI pMOSFETs scaled down to 30-nm gate length with record off-state current L Hutin, C Le Royer, JF Damlencourt, JM Hartmann, H Grampeix, ... IEEE Electron Device Letters 31 (3), 234-236, 2010 | 136 | 2010 |
| Electrical Spin Driving by -Matrix Modulation in Spin-Orbit Qubits A Crippa, R Maurand, L Bourdet, D Kotekar-Patil, A Amisse, X Jehl, ... Physical review letters 120 (13), 137702, 2018 | 135 | 2018 |
| Cryogenic subthreshold swing saturation in FD-SOI MOSFETs described with band broadening H Bohuslavskyi, AGM Jansen, S Barraud, V Barral, M Cassé, L Le Guevel, ... IEEE Electron Device Letters 40 (5), 784-787, 2019 | 117 | 2019 |
| Electrically driven electron spin resonance mediated by spin–valley–orbit coupling in a silicon quantum dot A Corna, L Bourdet, R Maurand, A Crippa, D Kotekar-Patil, ... npj quantum information 4 (1), 6, 2018 | 108 | 2018 |
| Characterization and modeling of 28-nm FDSOI CMOS technology down to cryogenic temperatures A Beckers, F Jazaeri, H Bohuslavskyi, L Hutin, S De Franceschi, C Enz Solid-State Electronics 159, 106-115, 2019 | 99 | 2019 |
| 3D Sequential Integration: Application-driven technological achievements and guidelines P Batude, L Brunet, C Fenouillet-Beranger, F Andrieu, JP Colinge, ... 2017 IEEE International Electron Devices Meeting (IEDM), 3.1. 1-3.1. 4, 2017 | 86 | 2017 |
| Characterization of contact resistance stability in MEM relays with tungsten electrodes Y Chen, R Nathanael, J Jeon, J Yaung, L Hutin, TJK Liu Journal of Microelectromechanical Systems 21 (3), 511-513, 2012 | 73 | 2012 |
| Single-electron operations in a foundry-fabricated array of quantum dots F Ansaloni, A Chatterjee, H Bohuslavskyi, B Bertrand, L Hutin, M Vinet, ... Nature communications 11 (1), 6399, 2020 | 72 | 2020 |
| A single hole spin with enhanced coherence in natural silicon N Piot, B Brun, V Schmitt, S Zihlmann, VP Michal, A Apra, ... Nature Nanotechnology 17 (10), 1072-1077, 2022 | 70 | 2022 |
| Fast gate-based readout of silicon quantum dots using Josephson parametric amplification S Schaal, I Ahmed, JA Haigh, L Hutin, B Bertrand, S Barraud, M Vinet, ... Physical review letters 124 (6), 067701, 2020 | 69 | 2020 |
| Charge detection in an array of CMOS quantum dots E Chanrion, DJ Niegemann, B Bertrand, C Spence, B Jadot, J Li, ... Physical Review Applied 14 (2), 024066, 2020 | 68 | 2020 |
| Spin readout of a CMOS quantum dot by gate reflectometry and spin-dependent tunneling VN Ciriano-Tejel, MA Fogarty, S Schaal, L Hutin, B Bertrand, L Ibberson, ... PRX Quantum 2 (1), 010353, 2021 | 61 | 2021 |
| High performance 70 nm gate length germanium-on-insulator pMOSFET with high-k/metal gate K Romanjek, L Hutin, C Le Royer, A Pouydebasque, MA Jaud, C Tabone, ... Solid-state electronics 53 (7), 723-729, 2009 | 58 | 2009 |
| 99.992% 28Si CVD-grown epilayer on 300 mm substrates for large scale integration of silicon spin qubits V Mazzocchi, PG Sennikov, AD Bulanov, MF Churbanov, B Bertrand, ... Journal of Crystal Growth 509, 1-7, 2019 | 56 | 2019 |
